Stanislav Tyaginov

25 papers Journal 4Unranked 21
YearRankTypeTitle / Venue / Authors
2025 — conf
A Carrier-Energy-Based Compact Model for Hot-Carrier Degradation Implemented in Verilog-A.
IRPS
Dishant Sangani, Michiel Vandemaele, Stanislav Tyaginov, Erik Bury, Ben Kaczer, Georges G. E. Gielen
2024 — conf
Statistical Characterization of Off-State Stress Degradation in Planar HKMG nFETs Using Device Arrays.
IRPS
Pablo Saraza-Canflanca, Dishant Sangani, Javier Diaz-Fortuny, Stanislav Tyaginov, Georges G. E. Gielen, Erik Bury, Ben Kaczer
2023 — conf
Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs.
IRPS
L. Panarella, Ben Kaczer, Quentin Smets, Devin Verreck, Tom Schram, Daire Cott, Dennis Lin, Stanislav Tyaginov, Inge Asselberghs, Cesar J. Lockhart de la Rosa, Gouri Sankar Kar, Valeri Afanas'ev
2023 — conf
Reliability challenges in Forksheet Devices: (Invited Paper).
IRPS
Erik Bury, Michiel Vandemaele, Jacopo Franco, Adrian Chasin, Stanislav Tyaginov, A. Vandooren, Romain Ritzenthaler, Hans Mertens, Javier Diaz-Fortuny, N. Horiguchi, Dimitri Linten, Ben Kaczer
2022 — conf
Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery.
IRPS
J. P. Bastos, Barry J. O'Sullivan, Jacopo Franco, Stanislav Tyaginov, Brecht Truijen, Adrian Vaisman Chasin, Robin Degraeve, Ben Kaczer, Romain Ritzenthaler, Elena Capogreco, E. Dentoni Litta, Alessio Spessot, Yusuke Higashi, Y. Yoon, V. Machkaoutsan, Pierre Fazan, N. Horiguchi
2022 — conf
Evaluating Forksheet FET Reliability Concerns by Experimental Comparison with Co-integrated Nanosheets.
IRPS
Erik Bury, Adrian Vaisman Chasin, Ben Kaczer, Michiel Vandemaele, Stanislav Tyaginov, Jacopo Franco, Romain Ritzenthaler, Hans Mertens, Pieter Weckx, N. Horiguchi, Dimitri Linten
2022 — conf
On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-Transistors.
IRPS
Stanislav Tyaginov, Aryan Afzalian, Alexander Makarov, Alexander Grill, Michiel Vandemaele, Maksim Cherenev, Mikhail I. Vexler, Geert Hellings, Ben Kaczer
2022 — conf
Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs.
IRPS
Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Erik Bury, Adrian Vaisman Chasin, Jacopo Franco, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken
2022 — conf
Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors.
IRPS
Alexander Grill, V. John, Jakob Michl, A. Beckers, Erik Bury, Stanislav Tyaginov, Bertrand Parvais, Adrian Vaisman Chasin, Tibor Grasser, Michael Waltl, Ben Kaczer, Bogdan Govoreanu
2022 — conf
Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors.
IRPS
Stanislav Tyaginov, Alexander Makarov, Al-Moatasem Bellah El-Sayed, Adrian Vaisman Chasin, Erik Bury, Markus Jech, Michiel Vandemaele, Alexander Grill, An De Keersgieter, Mikhail I. Vexler, Geert Eneman, Ben Kaczer
2021 — conf
A BSIM-Based Predictive Hot-Carrier Aging Compact Model.
IRPS
Yang Xiang, Stanislav Tyaginov, Michiel Vandemaele, Zhicheng Wu, Jacopo Franco, Erik Bury, Brecht Truijen, Bertrand Parvais, Dimitri Linten, Ben Kaczer
2021 — conf
Physics-based device aging modelling framework for accurate circuit reliability assessment.
IRPS
Zhicheng Wu, Jacopo Franco, Brecht Truijen, Philippe Roussel, Stanislav Tyaginov, Michiel Vandemaele, Erik Bury, Guido Groeseneken, Dimitri Linten, Ben Kaczer
2021 — conf
The properties, effect and extraction of localized defect profiles from degraded FET characteristics.
IRPS
Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Jacopo Franco, Robin Degraeve, Adrian Vaisman Chasin, Zhicheng Wu, Erik Bury, Yang Xiang, Hans Mertens, Guido Groeseneken
2020 — conf
A Compact Physics Analytical Model for Hot-Carrier Degradation.
IRPS
Stanislav Tyaginov, Alexander Grill, Michiel Vandemaele, Tibor Grasser, Geert Hellings, Alexander Makarov, Markus Jech, Dimitri Linten, Ben Kaczer
2020 — conf
Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures.
IRPS
Alexander Grill, Erik Bury, Jakob Michl, Stanislav Tyaginov, Dimitri Linten, Tibor Grasser, Bertrand Parvais, Ben Kaczer, Michael Waltl, Iuliana P. Radu
2020 — conf
The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation.
IRPS
Michiel Vandemaele, Kai-Hsin Chuang, Erik Bury, Stanislav Tyaginov, Guido Groeseneken, Ben Kaczer
2019 — conf
Full (V
IRPS
Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Zlatan Stanojevic, Alexander Makarov, Adrian Vaisman Chasin, Erik Bury, Hans Mertens, Dimitri Linten, Guido Groeseneken
2019 — conf
Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs.
IRPS
Alexander Makarov, Ben Kaczer, Philippe Roussel, Adrian Vaisman Chasin, Alexander Grill, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Tibor Grasser, Dimitri Linten, Stanislav Tyaginov
2019 — conf
Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants.
ESSDERC
Alexander Makarov, Dimitri Linten, Stanislav Tyaginov, Ben Kaczer, Philippe Roussel, Adrian Vaisman Chasin, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Markus Jech, Tibor Grasser
2016 — conf
A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs.
ESSDERC
Prateek Sharma, Stanislav Tyaginov, Stewart E. Rauch, Jacopo Franco, Ben Kaczer, Alexander Makarov, Mikhail I. Vexler, Tibor Grasser
2015 J jnl
Comparison of analytic distribution function models for hot-carrier degradation modeling in nLDMOSFETs.
Microelectron. Reliab.
Prateek Sharma, Stanislav Tyaginov, Yannick Wimmer, Florian Rudolf, Karl Rupp, Hubert Enichlmair, J. H. Park, Hajdin Ceric, Tibor Grasser
2015 — conf
Origins and implications of increased channel hot carrier variability in nFinFETs.
IRPS
Ben Kaczer, Jacopo Franco, M. Cho, Tibor Grasser, Philippe J. Roussel, Stanislav Tyaginov, M. Bina, Yannick Wimmer, Luis-Miguel Procel, Lionel Trojman, Felice Crupi, Gregory Pitner, Vamsi Putcha, Pieter Weckx, Erik Bury, Z. Ji, An De Keersgieter, Thomas Chiarella, Naoto Horiguchi, Guido Groeseneken, Aaron Thean
2011 J jnl
An analytical approach for physical modeling of hot-carrier induced degradation.
Microelectron. Reliab.
Stanislav Tyaginov, Ivan A. Starkov, Hubert Enichlmair, Christoph Jungemann, Jong Mun Park, Ehrenfried Seebacher, R. L. de Orio, Hajdin Ceric, Tibor Grasser
2010 J jnl
Interface traps density-of-states as a vital component for hot-carrier degradation modeling.
Microelectron. Reliab.
Stanislav Tyaginov, Ivan A. Starkov, Oliver Triebl, Johann Cervenka, Christoph Jungemann, Sara Carniello, Jong Mun Park, Hubert Enichlmair, Markus Karner, Ch. Kernstock, Ehrenfried Seebacher, Rainer Minixhofer, Hajdin Ceric, Tibor Grasser
2009 J jnl
Impact of O-Si-O bond angle fluctuations on the Si-O bond-breakage rate.
Microelectron. Reliab.
Stanislav Tyaginov, Viktor Sverdlov, Ivan A. Starkov, Wolfgang Gös, Tibor Grasser