Srabanti Chowdhury

18 papers A* 1A 1Journal 4Unranked 12
YearRankTypeTitle / Venue / Authors
2025 J jnl
Robust Pareto Transistor Sizing of GaN HEMTs for Millimeter-Wave Applications.
IEEE Access
Rafael Perez Martinez, Stephen P. Boyd, Srabanti Chowdhury
2024 — conf
A Hybrid Physical ASM-HEMT Model Using a Neural Network-Based Methodology.
BCICTS
Rafael Perez Martinez, Masaya Iwamoto, Ana M. Banzer Morgado, Yiao Li, Roberto Tinti, Jianjun Xu, Chad Gillease, Steven Cochran, Bhawani Shankar, Else-Marie Schmidt, Zijian Song, Natalie Wagner, Philipp Pahl, Alexander Petr, Srabanti Chowdhury
2024 J jnl
Compact Model Parameter Extraction via Derivative-Free Optimization.
IEEE Access
Rafael Perez Martinez, Masaya Iwamoto, Kelly Woo, Zhengliang Bian, Roberto Tinti, Stephen P. Boyd, Srabanti Chowdhury
2024 J jnl
Compact Model Parameter Extraction via Derivative-Free Optimization.
CoRR
Rafael Perez Martinez, Masaya Iwamoto, Kelly Woo, Zhengliang Bian, Roberto Tinti, Stephen P. Boyd, Srabanti Chowdhury
2024 A conf
Efficient Ultra-Dense 3D IC Power Delivery and Cooling Using 3D Thermal Scaffolding.
ICCAD
Dennis Rich, Tathagata Srimani, Mohamadali Malakoutian, Srabanti Chowdhury, Subhasish Mitra
2024 — conf
First Experimental Demonstration of Monolithic Bidirectional Switch Using GaN Current Aperture Vertical Electron Transistor (CAVET).
DRC
Xinyi Wen, Hayao Kasai, Kwangjae Lee, Maliha Noshin, Jaeyi Chun, Srabanti Chowdhury
2024 J jnl
Robust Pareto Design of GaN HEMTs for Millimeter-Wave Applications.
CoRR
Rafael Perez Martinez, Stephen P. Boyd, Srabanti Chowdhury
2023 — conf
On Extracting the Maximum Power Density at High Frequencies from Gallium Nitride and Related Materials.
BCICTS
Mohamadali Malakoutian, Srabanti Chowdhury
2023 A* conf
Thermal Scaffolding for Ultra-Dense 3D Integrated Circuits.
DAC
Dennis Rich, Anna Kasperovich, Mohamadali Malakoutian, Robert M. Radway, Shiho Hagiwara, Takahide Yoshikawa, Srabanti Chowdhury, Subhasish Mitra
2022 — conf
Movement of Current Filaments and its Impact on Avalanche Robustness in Vertical GaN P-N diode Under UIS stress.
DRC
Bhawani Shankar, Ke Zeng, Brendan Gunning, Rafael Perez Martinez, Chuanzhe Meng, Jack Flicker, Andrew Binder, Jeramy Ray Dickerson, Robert Kaplar, Srabanti Chowdhury
2022 — conf
Study of Avalanche Behavior in 3 kV GaN Vertical P-N Diode Under UIS Stress for Edge-termination Optimization.
IRPS
Bhawani Shankar, Zhengliang Bian, Ke Zeng, Chuanzhe Meng, Rafael Perez Martinez, Srabanti Chowdhury, Brendan Gunning, Jack Flicker, Andrew Binder, Jeramy Ray Dickerson, Robert Kaplar
2021 — conf
Integration of Polycrystalline diamond on top of GaN and Ga2O3 devices for thermal management.
DRC
Srabanti Chowdhury
2021 — conf
Study on Avalanche Uniformity in 1.2KV GaN Vertical PIN Diode with Bevel Edge-Termination.
IRPS
Ke Zeng, Srabanti Chowdhury, Brendan Gunning, Robert Kaplar, Travis Anderson
2020 — conf
Demonstration of GaN Impact Ionization Avalanche Transit-Time (IMPATT) Diode.
DRC
Dong Ji, Burcu Ercan, Jia Zhuang, Lei Gu, Juan Rivas-Davila, Srabanti Chowdhury
2020 — conf
Hydrogen-terminated diamond FET and GaN HEMT delivering CMOS inverter operation at high-temperature.
DRC
Chenhao Ren, Mohamadali Malakoutian, Siwei Li, Srabanti Chowdhury
2020 — conf
Robust avalanche in GaN leading to record performance in avalanche photodiode.
IRPS
Dong Ji, Burcu Ercan, Garret Benson, A. K. M. Newaz, Srabanti Chowdhury
2019 — conf
Current Scaling in Single and Multiple Fin Static Induction Transistors with Sub-Micron Fin Width.
DRC
Jaeyi Chun, Srabanti Chowdhury
2019 — conf
Gate Stability and Robustness of In-Situ Oxide GaN Interlayer Based Vertical Trench MOSFETs (OG-FETs).
IRPS
Maria Ruzzarin, Matteo Borga, Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Dong Ji, Wenwen Li, Silvia H. Chan, Anchal Agarwal, Chirag Gupta, Stacia Keller, Umesh K. Mishra, Srabanti Chowdhury