Shun'ichiro Ohmi

56 papers Journal 47Unranked 9
YearRankTypeTitle / Venue / Authors
2025 J jnl
One Transistor Type OFET/ReRAM Integrated Device Utilizing High-k LaB
IEICE Trans. Electron.
Shun'ichiro Ohmi, Jiaang Zhao
2024 J jnl
Digital/Analog-Operation of Hf-Based FeNOS Nonvolatile Memory Utilizing Ferroelectric Nondoped HfO
IEICE Trans. Electron.
Shun'ichiro Ohmi
2024 J jnl
Foreword.
IEICE Trans. Electron.
Shun'ichiro Ohmi
2023 J jnl
Foreword.
IEICE Trans. Electron.
Shun'ichiro Ohmi
2023 J jnl
Kr-Plasma Sputtering for Pt Gate Electrode Deposition on MFSFET with 5 nm-Thick Ferroelectric Nondoped HfO
IEICE Trans. Electron.
Joong-Won Shin, Masakazu Tanuma, Shun'ichiro Ohmi
2023 — conf
Precise VTH Control of MFSFET with 5 nm-thick FeND-HfO2 Realized by Kr-Plasma Sputtering for Pt Gate Electrode Deposition.
DRC
Shun'ichiro Ohmi, Masakazu Tanuma, Joong-Won Shin
2022 J jnl
MFSFET with 5nm Thick Ferroelectric Nondoped HfO
IEICE Trans. Electron.
Joong-Won Shin, Masakazu Tanuma, Shun'ichiro Ohmi
2022 — conf
MFSFET with Ferroelectric HfN for Analog Memory Application.
DRC
Shun'ichiro Ohmi, Akio Ihara, Masakazu Tanuma, Jooyoung Pyo, Joong-Won Shin
2022 J jnl
Sputtering Gas Pressure Dependence on the LaB
IEICE Trans. Electron.
Eun-Ki Hong, Kyung Eun Park, Shun'ichiro Ohmi
2022 J jnl
The Effect of Inter Layers on the Ferroelectric Undoped HfO
IEICE Trans. Electron.
Masakazu Tanuma, Joong-Won Shin, Shun'ichiro Ohmi
2022 — conf
Ultrathin Ferroelectric Nondoped HfO2 for MFSFET with High-speed and Low-voltage Operation.
DRC
Joong-Won Shin, Masakazu Tanuma, J. Pyo, Shun'ichiro Ohmi
2021 — conf
Ferroelectric Nondoped HfO2 Blocking Layer Formation for Hf-based FeNOS Analog Memory Applications.
DRC
Shun'ichiro Ohmi, Hiroki Morita, Masaki Hayashi, Akio Ihara, Jooyoung Pyo
2021 — conf
MFSFET with 5 nm Thick Ferroelectric Undoped HfO2 Gate Insulator.
DRC
Joong-Won Shin, Masakazu Tanuma, Shun'ichiro Ohmi
2020 J jnl
Ferroelectric Gate Field-Effect Transistors with 10nm Thick Nondoped HfO
IEICE Trans. Electron.
Min Gee Kim, Masakazu Kataoka, Rengie Mark D. Mailig, Shun'ichiro Ohmi
2020 — conf
High-k LaBxNy gate insulator formed by the Ar/N2 plasma sputtering of N-doped LaB6 metal thin films and its application to floating-gate memory.
DRC
Kyung Eun Park, Shun'ichiro Ohmi
2020 — conf
Low-Voltage Operation of MFSFET with Ferroelectric Nondoped HfO2 Formed by Kr/O2-Plasma Sputtering.
DRC
Shun'ichiro Ohmi, Min Gee Kim, Masakazu Kataoka, Masaki Hayashi, Rengie Mark D. Mailig
2020 J jnl
The Evaluation of the Interface Properties of PdEr-Silicide on Si(100) Formed with TiN Encapsulating Layer and Dopant Segregation Process.
IEICE Trans. Electron.
Rengie Mark D. Mailig, Min Gee Kim, Shun'ichiro Ohmi
2020 J jnl
The Influence of High-Temperature Sputtering on the N-Doped LaB
IEICE Trans. Electron.
Kyung Eun Park, Shun'ichiro Ohmi
2019 J jnl
AuGe-Alloy Source and Drain Formation by the Lift-Off Process for the Scaling of Bottom-Contact Type Pentacene-Based OFETs.
IEICE Trans. Electron.
Shun'ichiro Ohmi, Mizuha Hiroki, Yasutaka Maeda
2019 J jnl
Etching Control of HfN Encapsulating Layer for PtHf-Silicide Formation with Dopant Segregation Process.
IEICE Trans. Electron.
Shun'ichiro Ohmi, Yuya Tsukamoto, Rengie Mark D. Mailig
2019 J jnl
Low Temperature Formation of Pd
IEICE Trans. Electron.
Rengie Mark D. Mailig, Shun'ichiro Ohmi
2019 J jnl
The Effect of Kr/O
IEICE Trans. Electron.
Binjian Zeng, Jiajia Liao, Qiangxiang Peng, Min Liao, Yichun Zhou, Shun'ichiro Ohmi
2019 J jnl
The Effect of PMA with TiN Gate Electrode on the Formation of Ferroelectric Undoped HfO
IEICE Trans. Electron.
Min Gee Kim, Shun'ichiro Ohmi
2019 — conf
Ultrathin HfN Multilayer Gate Insulator Formation with High Dielectric Constant Induced by Interface Polarization.
DRC
Shun'ichiro Ohmi, Yizhe Ding, Sohya Kudoh
2018 J jnl
Electron Injection of N-type Pentacene-Based OFET with Nitrogen-Doped LaB
IEICE Trans. Electron.
Yasutaka Maeda, Mizuha Hiroki, Shun'ichiro Ohmi
2018 J jnl
Improvement of Endurance Characteristics for Al-Gate Hf-Based MONOS Structures on Atomically Flat Si(100) Surface Realized by Annealing in Ar/H
IEICE Trans. Electron.
Sohya Kudoh, Shun'ichiro Ohmi
2018 — conf
Multi-level 2-bit/cell operation utilizing Hf-based MONOS nonvolatile memory.
DRC
Sohya Kudoh, Shun'ichiro Ohmi
2018 J jnl
PdEr-Silicide Formation and Contact Resistivity Reduction to n-Si(100) Realized by Dopant Segregation Process.
IEICE Trans. Electron.
Shun'ichiro Ohmi, Yuya Tsukamoto, Weiguang Zuo, Yasushi Masahiro
2017 J jnl
Effect of Nitrogen-Doped LaB
IEICE Trans. Electron.
Yasutaka Maeda, Shun'ichiro Ohmi, Tetsuya Goto, Tadahiro Ohmi
2017 J jnl
PdYb-Silicide with Low Schottky Barrier Height to n-Si Formed from Pd/Yb/Si(100) Stacked Structures.
IEICE Trans. Electron.
Shun'ichiro Ohmi, Mengyi Chen, Weiguang Zuo, Yasushi Masahiro
2016 J jnl
A Study on Substrate Orientation Dependence of Si Surface Flattening Process by Sacrificial Oxidation and Its Effect on MIS Diode Characteristics.
IEICE Trans. Electron.
Sohya Kudoh, Shun'ichiro Ohmi
2016 J jnl
High Quality Pentacene Film Formation on N-Doped LaB
IEICE Trans. Electron.
Yasutaka Maeda, Shun'ichiro Ohmi, Tetsuya Goto, Tadahiro Ohmi
2016 J jnl
Investigation of bilayer HfN
IEICE Electron. Express
Nithi Atthi, Shun'ichiro Ohmi
2016 J jnl
PtHf Silicide Formation Utilizing PtHf-Alloy Target for Low Contact Resistivity.
IEICE Trans. Electron.
Shun'ichiro Ohmi, Mengyi Chen, Xiaopeng Wu, Yasushi Masahiro
2015 J jnl
A Study on Si(100) Surface Flattening Utilizing Sacrificial Oxidation Process and Its Effect on MIS Diode Characteristics.
IEICE Trans. Electron.
Sohya Kudoh, Shun'ichiro Ohmi
2015 J jnl
In-situ formation of Hf-based MONOS structures for non-volatile memory applications.
IEICE Electron. Express
Shun'ichiro Ohmi, Yeyuan Liu
2014 J jnl
Experimental demonstration of a ferroelectric FET using paper substrate.
IEICE Electron. Express
Changhwan Shin, Gwang-Geun Lee, Dae-Hee Han, Seung-Pil Han, Eisuke Tokumitsu, Shun'ichiro Ohmi, Dong-Joo Kim, Hiroshi Ishiwara, Minseo Park, Seung-Hyun Kim, Wan-Gyu Lee, Yun Jeong Hwang, Byung-Eun Park
2014 J jnl
Importance of Si surface flatness to realize high-performance Si devices utilizing ultrathin films with new material system.
IEICE Electron. Express
Shun'ichiro Ohmi
2014 J jnl
Influence of Si Surface Roughness on Electrical Characteristics of MOSFET with HfON Gate Insulator Formed by ECR Plasma Sputtering.
IEICE Trans. Electron.
Dae-Hee Han, Shun'ichiro Ohmi, Tomoyuki Suwa, Philippe Gaubert, Tadahiro Ohmi
2013 J jnl
Contact resistivity reduction for PtSi/Si(100) by dopant segregation process.
IEICE Electron. Express
Shun'ichiro Ohmi, Jun Arima
2013 J jnl
Flattening Process of Si Surface below 1000°C Utilizing Ar/4.9%H
IEICE Trans. Electron.
Dae-Hee Han, Shun'ichiro Ohmi
2013 J jnl
Impact of Si surface roughness on MOSFET characteristics with ultrathin HfON gate insulator formed by ECR plasma sputtering.
IEICE Electron. Express
Dae-Hee Han, Huiseong Han, Shun'ichiro Ohmi
2012 J jnl
Growth Mechanism of Pentacene on HfON Gate Insulator and Its Effect on Electrical Properties of Organic Field-Effect Transistors.
IEICE Trans. Electron.
Min Liao, Hiroshi Ishiwara, Shun'ichiro Ohmi
2012 J jnl
Hafnium-nitride gate insulator formed by electron-cyclotron-resonance plasma sputtering.
IEICE Electron. Express
Huiseong Han, Shun'ichiro Ohmi
2011 J jnl
A study on precise control of PtSi work function by alloying with Hf.
IEICE Electron. Express
Jun Gao, Jumpei Ishikawa, Shun'ichiro Ohmi
2011 J jnl
Investigation of n-Type Pentacene Based MOS Diodes with Ultra-Thin Metal Interface Layer.
IEICE Trans. Electron.
Young-Uk Song, Hiroshi Ishiwara, Shun'ichiro Ohmi
2011 J jnl
Low contact resistivity of barrier height controlled PtHfSi to Si evaluated by cross-bridge Kelvin resistor.
IEICE Electron. Express
Shun'ichiro Ohmi, Jun Gao
2011 J jnl
Modulation of PtSi Work Function by Alloying with Low Work Function Metal.
IEICE Trans. Electron.
Jun Gao, Jumpei Ishikawa, Shun'ichiro Ohmi
2011 J jnl
Performance improvement of pentacene based organic field-effect transistor with HfON gate insulator.
IEICE Electron. Express
Min Liao, Hiroshi Ishiwara, Shun'ichiro Ohmi
2011 J jnl
Selective etching of HfN gate electrode for HfN/HfSiON gate stack in-situ formations.
IEICE Electron. Express
Takahiro Sano, Shun'ichiro Ohmi
2011 J jnl
Work function modulation of PtSi by alloying with Yb.
IEICE Electron. Express
Jumpei Ishikawa, Jun Gao, Shun'ichiro Ohmi
2007 J jnl
A Proposal of TC-MOSFET and Fabrication Process of Twin Si Channels.
IEICE Trans. Electron.
Shun'ichiro Ohmi, Tetsushi Sakai
2006 J jnl
Ultrathin HfO
IEICE Trans. Electron.
Shun'ichiro Ohmi, Tomoki Kurose, Masaki Satoh
2005 J jnl
Electrical properties of vacuum annealed La
Microelectron. J.
Yongshik Kim, Kunihiro Miyauchi, Shun'ichiro Ohmi, Kazuo Tsutsui, Hiroshi Iwai
2005 J jnl
Separation by Bonding Si Islands (SBSI) for Advanced CMOS LSI Applications.
IEICE Trans. Electron.
Takashi Yamazaki, Shun'ichiro Ohmi, Shinya Morita, Hiroyuki Ohri, Junichi Murota, Masao Sakuraba, Hiroo Omi, Tetsushi Sakai
2002 J jnl
Silicon integrated circuit technology from past to future.
Microelectron. Reliab.
Hiroshi Iwai, Shun'ichiro Ohmi