Shinji Miyano - RankMe

33 papers A 2Journal 13Unranked 18

Year	Rank	Type	Title / Venue / Authors
2024	—	`conf`	Mitigation of Accuracy Degradation in 3D Flash Memory Based Approximate Nearest Neighbor Search with Binary Tree Balanced Soft Clustering for Retrieval-Augmented AI. NewCAS Shinichi Sasaki, Yuta Aiba, Yusuke Komano, Takahiko Iizuka, Motohiko Fujimatsu, Atsushi Kawasumi, Daisuke Miyashita, Jun Deguchi, Takashi Maeda, Shinji Miyano, Tooru Maruyama
2014	—	`conf`	13.4 A 7ns-access-time 25μW/MHz 128kb SRAM for low-power fast wake-up MCU in 65nm CMOS with 27fA/b retention current. ISSCC Toshikazu Fukuda, Koji Kohara, Toshiaki Dozaka, Yasuhisa Takeyama, Tsuyoshi Midorikawa, Kenji Hashimoto, Ichiro Wakiyama, Shinji Miyano, Takehiko Hojo
2013	—	`conf`	A 40-nm 0.5-V 12.9-pJ/Access 8T SRAM using low-power disturb mitigation technique. ASP-DAC Shusuke Yoshimoto, Masaharu Terada, Shunsuke Okumura, Toshikazu Suzuki, Shinji Miyano, Hiroshi Kawaguchi, Masahiko Yoshimoto
2013	—	`conf`	A 40-nm 8T SRAM with selective source line control of read bitlines and address preset structure. CICC Shusuke Yoshimoto, Shinji Miyano, Makoto Takamiya, Hirofumi Shinohara, Hiroshi Kawaguchi, Masahiko Yoshimoto
2013	J	`jnl`	A 6T-SRAM With a Post-Process Electron Injection Scheme That Pinpoints and Simultaneously Repairs Disturb Fails for 57% Less Read Delay and 31% Less Read Energy. IEEE J. Solid State Circuits Kousuke Miyaji, Toshikazu Suzuki, Shinji Miyano, Ken Takeuchi
2013	J	`jnl`	Experimental Demonstration of Post-Fabrication Self-Improvement of SRAM Cell Stability by High-Voltage Stress. IEICE Trans. Electron. Toshiro Hiramoto, Anil Kumar, Takuya Saraya, Shinji Miyano
2013	J	`jnl`	Highly Energy-Efficient SRAM With Hierarchical Bit Line Charge-Sharing Method Using Non-Selected Bit Line Charges. IEEE J. Solid State Circuits Shinji Miyano, Shinichi Moriwaki, Yasue Yamamoto, Atsushi Kawasumi, Toshikazu Suzuki, Takayasu Sakurai, Hirofumi Shinohara
2013	J	`jnl`	NBTI Reliability of PFETs under Post-Fabrication Self-Improvement Scheme for SRAM. IEICE Trans. Electron. Nurul Ezaila Alias, Anil Kumar, Takuya Saraya, Shinji Miyano, Toshiro Hiramoto
2012	—	`conf`	60% Cycle time acceleration, 55% energy reduction, 32Kbit SRAM by auto-selective boost (ASB) scheme for slow memory cells in random variations. ESSCIRC Yasue Yamamoto, Atsushi Kawasumi, Shinichi Moriwaki, Toshikazu Suzuki, Shinji Miyano, Hirofumi Shinohara
2012	—	`conf`	A 13.8pJ/Access/Mbit SRAM with charge collector circuits for effective use of non-selected bit line charges. VLSIC Shinichi Moriwaki, Yasuhiro Yamamoto, Atsushi Kawasumi, Toshikazu Suzuki, Shinji Miyano, Takayasu Sakurai, Hirofumi Shinohara
2012	J	`jnl`	A 40-nm 0.5-V 12.9-pJ/Access 8T SRAM Using Low-Energy Disturb Mitigation Scheme. IEICE Trans. Electron. Shusuke Yoshimoto, Masaharu Terada, Shunsuke Okumura, Toshikazu Suzuki, Shinji Miyano, Hiroshi Kawaguchi, Masahiko Yoshimoto
2012	—	`conf`	A 40-nm 256-Kb 0.6-V operation half-select resilient 8T SRAM with sequential writing technique enabling 367-mV VDDmin reduction. ISQED Masaharu Terada, Shusuke Yoshimoto, Shunsuke Okumura, Toshikazu Suzuki, Shinji Miyano, Hiroshi Kawaguchi, Masahiko Yoshimoto
2012	J	`jnl`	A 40-nm 256-Kb Half-Select Resilient 8T SRAM with Sequential Writing Technique. IEICE Electron. Express Shusuke Yoshimoto, Masaharu Terada, Shunsuke Okumura, Toshikazu Suzuki, Shinji Miyano, Hiroshi Kawaguchi, Masahiko Yoshimoto
2012	A	`conf`	A 40-nm 256-Kb Sub-10 pJ/Access 8t SRAM with read bitline amplitude limiting (RBAL) scheme. ISLPED Shusuke Yoshimoto, Masaharu Terada, Youhei Umeki, Shunsuke Okumura, Atsushi Kawasumi, Toshikazu Suzuki, Shinichi Moriwaki, Shinji Miyano, Hiroshi Kawaguchi, Masahiko Yoshimoto
2012	—	`conf`	A 6T SRAM with a carrier-injection scheme to pinpoint and repair fails that achieves 57% faster read and 31% lower read energy. ISSCC Kousuke Miyaji, Toshikazu Suzuki, Shinji Miyano, Ken Takeuchi
2012	J	`jnl`	Analysis of Operation Margin and Read Speed in 6T- and 8T-SRAM with Local Electron Injected Asymmetric Pass Gate Transistor. IEICE Trans. Electron. Kousuke Miyaji, Kentaro Honda, Shuhei Tanakamaru, Shinji Miyano, Ken Takeuchi
2012	J	`jnl`	Near Threshold Voltage Word-Line Voltage Injection Self-Convergence Scheme for Local Electron Injected Asymmetric Pass Gate Transistor 6T-SRAM. IEEE Trans. Circuits Syst. I Regul. Pap. Kousuke Miyaji, Yasuhiro Shinozuka, Shinji Miyano, Ken Takeuchi
2011	—	`conf`	0.4V SRAM with bit line swing suppression charge share hierarchical bit line scheme. CICC Shinichi Moriwaki, Atsushi Kawasumi, Toshikazu Suzuki, Takayasu Sakurai, Shinji Miyano
2011	—	`conf`	Energy efficiency degradation caused by random variation in low-voltage SRAM and 26% energy reduction by Bitline Amplitude Limiting (BAL) scheme. A-SSCC Atsushi Kawasumi, Toshikazu Suzuki, Shinichi Moriwaki, Shinji Miyano
2011	J	`jnl`	Improvement of Read Margin and Its Distribution by V IEEE J. Solid State Circuits Kousuke Miyaji, Shuhei Tanakamaru, Kentaro Honda, Shinji Miyano, Ken Takeuchi
2011	—	`conf`	Statistical VTH shift variation self-convergence scheme using near threshold VWL injection for local electron injected asymmetric pass gate transistor SRAM. CICC Kousuke Miyaji, Yasuhiro Shinozuka, Shinji Miyano, Ken Takeuchi
2010	—	`conf`	0.5-V, 150-MHz, bulk-CMOS SRAM with suspended bit-line read scheme. ESSCIRC Toshikazu Suzuki, Shinichi Moriwaki, Atsushi Kawasumi, Shinji Miyano, Hirofumi Shinohara
2010	—	`conf`	Elimination of half select disturb in 8T-SRAM by local injected electron asymmetric pass gate transistor. CICC Kentaro Honda, Kousuke Miyaji, Shuhei Tanakamaru, Shinji Miyano, Ken Takeuchi
2010	A	`conf`	Misleading energy and performance claims in sub/near threshold digital systems. ICCAD Yu Pu, Xin Zhang, Jim Huang, Atsushi Muramatsu, Masahiro Nomura, Koji Hirairi, Hidehiro Takata, Taro Sakurabayashi, Shinji Miyano, Makoto Takamiya, Takayasu Sakurai
2008	—	`conf`	An 833MHz Pseudo-Two-Port Embedded DRAM for Graphics Applications. ISSCC Mariko Kaku, Hitoshi Iwai, Takeshi Nagai, Masaharu Wada, Atsushi Suzuki, Tomohisa Takai, Naoko Itoga, Takayuki Miyazaki, Takayuki Iwai, Hiroyuki Takenaka, Takehiko Hojo, Shinji Miyano, Nobuaki Otsuka
2008	—	`conf`	An RF MEMS Variable Capacitor with Intelligent Bipolar Actuation. ISSCC Tamio Ikehashi, Takayuki Miyazaki, Hiroaki Yamazaki, Atsushi Suzuki, Etsuji Ogawa, Shinji Miyano, Tomohiro Saito, Tatsuya Ohguro, Takeshi Miyagi, Yoshiaki Sugizaki, Nobuaki Otsuka, Hideki Shibata, Yoshiaki Toyoshima
2006	—	`conf`	A 65nm low-power embedded DRAM with extended data-retention sleep mode. ISSCC Takeshi Nagai, Masaharu Wada, Hitoshi Iwai, Mariko Kaku, Atsushi Suzuki, Tomohisa Takai, Naoko Itoga, Takayuki Miyazaki, Hiroyuki Takenaka, Takehiko Hojo, Shinji Miyano
2001	—	`conf`	Interface socket design methodology to generate embedded DRAM macros. CICC Ryo Haga, Tetsuya Kaneko, Atsushi Nakayama, Shinji Miyano, Hiroyuki Takenaka, Kenji Numata, Hiroyuki Koinuma, Takehiko Hojo, Akikuni Sato, Toshiyuki Kouchi, Kenichiro Mimoto, Masaaki Tazawa, Tsutomu Ohkubo, Takanori Andou, Tetsuya Amano
2000	J	`jnl`	Dynamically shift-switched dataline redundancy suitable for DRAM macro with wide data bus. IEEE J. Solid State Circuits Toshimasa Namekawa, Shinji Miyano, Ryo Fukuda, Ryo Haga, Osamu Wada, Hironori Banba, Satoru Takeda, Kazuhiro Suda, Kenichiro Mimoto, Satoshi Yamaguchi, Tsutomu Ohkubo, Hiroshi Takato, Kenji Numata
1999	J	`jnl`	Universal Test Interface for Embedded-DRAM Testing. IEEE Des. Test Comput. Shinji Miyano, Katsuhiko Sato, Kenji Numata
1998	—	`conf`	A DRAM module generator with an expandable cell array scheme. CICC Hideki Takeuchi, Tomoaki Yabe, Shinji Miyano, Takehiko Hojo, Motohiro Enkaku, Masaaki Yamada, Masami Murakata
1998	J	`jnl`	A configurable DRAM macro design for 2112 derivative organizations to be synthesized using a memory generator. IEEE J. Solid State Circuits Tomoaki Yabe, Shinji Miyano, Katsuhiko Sato, Masaharu Wada, Ryo Haga, Osamu Wada, Motohiro Enkaku, Takehiko Hojyo, Kenichiro Mimoto, Masaaki Tazawa, Tsutomu Ohkubo, Kenji Numata
1995	J	`jnl`	A 1.6 Gbyte/s data transfer rate 8 Mb embedded DRAM. IEEE J. Solid State Circuits Shinji Miyano, Kenji Numata, Katsuhiko Sato, Tomoaki Yabe, Masaharu Wada, Ryo Haga, Motohiro Enkaku, Masazumi Shiochi, Yutaka Kawashima, Masayuki Iwase, Masahisa Ohgata, Junpei Kumagai, Takeshi Yoshida, Masaomi Sakurai, Seiji Kaki, Narutoshi Yanagiya, Hiroshi Shinya, Tohm Fumyama, Paul Hansen, Marc Hannah, Michael Nagy, Anan Nagarajan, Mana Rungsea