Shigeki Ohbayashi

14 papers A 1Journal 10Unranked 3

Year	Rank	Type	Title / Venue / Authors
2012	J	`jnl`	A Yield and Reliability Improvement Methodology Based on Logic Redundant Repair with a Repairable Scan Flip-Flop Designed by Push Rule. ACM Trans. Design Autom. Electr. Syst. Masanori Kurimoto, Jun Matsushima, Shigeki Ohbayashi, Yoshiaki Fukui, Michio Komoda, Nobuhiro Tsuda
2010	—	`conf`	A yield improvement methodology based on logic redundant repair with a repairable scan flip-flop designed by push rule. ISQED Masanori Kurimoto, Jun Matsushima, Shigeki Ohbayashi, Yoshiaki Fukui
2009	J	`jnl`	Synchronous Ultra-High-Density 2RW Dual-Port 8T-SRAM With Circumvention of Simultaneous Common-Row-Access. IEEE J. Solid State Circuits Koji Nii, Yasumasa Tsukamoto, Makoto Yabuuchi, Yasuhiro Masuda, Susumu Imaoka, Keiichi Usui, Shigeki Ohbayashi, Hiroshi Makino, Hirofumi Shinohara
2008	J	`jnl`	A 45 nm 2-port 8T-SRAM Using Hierarchical Replica Bitline Technique With Immunity From Simultaneous R/W Access Issues. IEEE J. Solid State Circuits Satoshi Ishikura, Marefusa Kurumada, Toshio Terano, Yoshinobu Yamagami, Naoki Kotani, Katsuji Satomi, Koji Nii, Makoto Yabuuchi, Yasumasa Tsukamoto, Shigeki Ohbayashi, Toshiyuki Oashi, Hiroshi Makino, Hirofumi Shinohara, Hironori Akamatsu
2008	J	`jnl`	A 45-nm Bulk CMOS Embedded SRAM With Improved Immunity Against Process and Temperature Variations. IEEE J. Solid State Circuits Koji Nii, Makoto Yabuuchi, Yasumasa Tsukamoto, Shigeki Ohbayashi, Susumu Imaoka, Hiroshi Makino, Yoshinobu Yamagami, Satoshi Ishikura, Toshio Terano, Toshiyuki Oashi, Keiji Hashimoto, Akio Sebe, Gen Okazaki, Katsuji Satomi, Hironori Akamatsu, Hirofumi Shinohara
2008	J	`jnl`	A 65 nm Embedded SRAM With Wafer Level Burn-In Mode, Leak-Bit Redundancy and Cu E-Trim Fuse for Known Good Die. IEEE J. Solid State Circuits Shigeki Ohbayashi, Makoto Yabuuchi, Kazushi Kono, Yuji Oda, Susumu Imaoka, Keiichi Usui, Toshiaki Yonezu, Takeshi Iwamoto, Koji Nii, Yasumasa Tsukamoto, Masashi Arakawa, Takahiro Uchida, Masakazu Okada, Atsushi Ishii, Tsutomu Yoshihara, Hiroshi Makino, Koichiro Ishibashi, Hirofumi Shinohara
2008	J	`jnl`	A Large-Scale, Flip-Flop RAM Imitating a Logic LSI for Fast Development of Process Technology. IEICE Trans. Electron. Masako Fujii, Koji Nii, Hiroshi Makino, Shigeki Ohbayashi, Motoshige Igarashi, Takeshi Kawamura, Miho Yokota, Nobuhiro Tsuda, Tomoaki Yoshizawa, Toshikazu Tsutsui, Naohiko Takeshita, Naofumi Murata, Tomohiro Tanaka, Takanari Fujiwara, Kyoko Asahina, Masakazu Okada, Kazuo Tomita, Masahiko Takeuchi, Shigehisa Yamamoto, Hiromitsu Sugimoto, Hirofumi Shinohara
2007	—	`conf`	A 45nm Low-Standby-Power Embedded SRAM with Improved Immunity Against Process and Temperature Variations. ISSCC Makoto Yabuuchi, Koji Nii, Yasumasa Tsukamoto, Shigeki Ohbayashi, Susumu Imaoka, Hiroshi Makino, Yoshinobu Yamagami, Satoshi Ishikura, Toshio Terano, Toshiyuki Oashi, Keiji Hashimoto, Akio Sebe, Gen Okazaki, Katsuji Satomi, Hironori Akamatsu, Hirofumi Shinohara
2007	J	`jnl`	A 65-nm SoC Embedded 6T-SRAM Designed for Manufacturability With Read and Write Operation Stabilizing Circuits. IEEE J. Solid State Circuits Shigeki Ohbayashi, Makoto Yabuuchi, Koji Nii, Yasumasa Tsukamoto, Susumu Imaoka, Yuji Oda, Tsutomu Yoshihara, Motoshige Igarashi, Masahiko Takeuchi, Hiroshi Kawashima, Yasuo Yamaguchi, Kazuhiro Tsukamoto, Masahide Inuishi, Hiroshi Makino, Koichiro Ishibashi, Hirofumi Shinohara
2007	—	`conf`	A 65nm Embedded SRAM with Wafer-Level Burn-In Mode, Leak-Bit Redundancy and E-Trim Fuse for Known Good Die. ISSCC Shigeki Ohbayashi, Makoto Yabuuchi, Kazushi Kono, Yuji Oda, Susumu Imaoka, Keiichi Usui, Toshiaki Yonezu, Takeshi Iwamoto, Koji Nii, Yasumasa Tsukamoto, Masashi Arakawa, Takahiro Uchida, Masakazu Okada, Atsushi Ishii, Hiroshi Makino, Koichiro Ishibashi, Hirofumi Shinohara
2005	A	`conf`	Worst-case analysis to obtain stable read/write DC margin of high density 6T-SRAM-array with local Vth variability. ICCAD Yasumasa Tsukamoto, Koji Nii, Susumu Imaoka, Yuji Oda, Shigeki Ohbayashi, Tomoaki Yoshizawa, Hiroshi Makino, Koichiro Ishibashi, Hirofumi Shinohara
1999	J	`jnl`	A 500-MHz pipelined burst SRAM with improved SER immunity. IEEE J. Solid State Circuits Hirotoshi Sato, Tomohisa Wada, Shigeki Ohbayashi, Kunihiko Kozaru, Yasuyuki Okamoto, Yoshiko Higashide, Tadayuki Shimizu, Yukio Maki, Rui Morimoto, Hisakazu Otoi, Tsuyoshi Koga, Hiroki Honda, Makoto Taniguchi, Yutaka Arita, Toru Shiomi
1993	J	`jnl`	A 5.8-ns 256-Kb BiCMOS TTL SRAM with T-Shaped bit line architecture. IEEE J. Solid State Circuits Toru Shiomi, Tomohisa Wada, Shigeki Ohbayashi, Atsushi Ohba, Hiroki Honda, Yoshiyuki Ishigaki, Shiro Hine, Kenji Anami, Kimio Suzuki, Tadashi Sumi
1991	J	`jnl`	A 7 ns 1 Mb BiCMOS ECL SRAM with shift redundancy. IEEE J. Solid State Circuits Atsushi Ohba, Shigeki Ohbayashi, Toru Shiomi, Satoshi Takano, Kenji Anami, Hiroki Honda, Yoshiyuki Ishigaki, Masahiro Hatanaka, Shigeo Nagao, Shimpei Kayano