Sherif M. Sharroush

18 papers C 1Journal 11Unranked 6
YearRankTypeTitle / Venue / Authors
2025 J jnl
Design of a Novel CMOS Transimpedance Amplifier Based on a Current Mirror.
Int. J. Circuit Theory Appl.
Aya M. Shaaban, Sherif M. Sharroush, Yasser S. Abdalla, Sherif F. Nafea
2024 J jnl
Design of a 3-bit 2.2 ps step 357.5 ps range 0.247 μm2 0.85 μW 45 nm All-MOS delay element.
Integr.
Sherif M. Sharroush, Yasser S. Abdalla
2023 J jnl
Proposed time-mode wide fan-in NAND and NOR gates.
Int. J. Circuit Theory Appl.
Sherif M. Sharroush, Emad Badry
2020 — conf
An MTCMOS Subthreshold-Leakage Reduction Algorithm.
NILES
Sherif M. Sharroush
2020 J jnl
Inverter-based voltage-controlled and programmable comparators.
Int. J. Circuit Theory Appl.
Sherif M. Sharroush
2020 — conf
Optimum Sizing of the Sleep Transistor in MTCMOS Technology.
NILES
Sherif M. Sharroush
2019 — conf
A Novel Current-Domain DRAM Readout Scheme.
ICM
Sherif M. Sharroush
2019 J jnl
A predischarged bitline 1T-1C DRAM readout scheme.
Microelectron. J.
Sherif M. Sharroush
2019 J jnl
Design of the CMOS inverter-based amplifier: A quantitative approach.
Int. J. Circuit Theory Appl.
Sherif M. Sharroush
2018 J jnl
Time-Domain Readout of 1T-1C DRAM Cells.
J. Circuits Syst. Comput.
Sherif M. Sharroush
2017 J jnl
A voltage-controlled ring oscillator based on an FGMOS transistor.
Microelectron. J.
Sherif M. Sharroush
2016 J jnl
Performance optimization of 1T-1C DRAMs: A quantitative study.
Microelectron. J.
Sherif M. Sharroush
2015 — conf
A novel self-referenced ferroelectric-memory readout scheme.
ICECS
Sherif M. Sharroush
2015 — conf
An alternative to CMOS stacks based on a floating-gate transistor.
ICECS
Sherif M. Sharroush
2014 J jnl
Reading DRAM cells using two properly designed cascaded inverters.
Elektrotech. Informationstechnik
Sherif M. Sharroush
2013 — conf
Low-power and high-speed DRAM readout scheme.
ICECS
Sherif M. Sharroush
2012 J jnl
Dynamic random-access memories without sense amplifiers.
Elektrotech. Informationstechnik
Sherif M. Sharroush, Yasser S. Abdalla, Ahmed A. Dessouki, El-Sayed A. El-Badawy
2007 C conf
Increasing the Sense Margin of 1T-1C Ferroelectric Random-Access Memories.
ISCAS
Aly E. Salama, Sherif M. Sharroush, Mahmoud Y. Fekry