Seiichi Miyazaki

25 papers Journal 25
YearRankTypeTitle / Venue / Authors
2022 J jnl
Magnetic-Field Dependent Electron Transport of Fe
IEICE Trans. Electron.
Jialin Wu, Katsunori Makihara, Hai Zhang, Noriyuki Taoka, Akio Ohta, Seiichi Miyazaki
2022 J jnl
Study on Electron Emission from Phosphorus δ-Doped Si-QDs/Undoped Si-QDs Multiple-Stacked Structures.
IEICE Trans. Electron.
Katsunori Makihara, Tatsuya Takemoto, Shuji Obayashi, Akio Ohta, Noriyuki Taoka, Seiichi Miyazaki
2019 J jnl
Characterization of Electron Field Emission from Multiple-Stacking Si-Based Quantum Dots.
IEICE Trans. Electron.
Yuto Futamura, Katsunori Makihara, Akio Ohta, Mitsuhisa Ikeda, Seiichi Miyazaki
2017 J jnl
Embedding of Ti Nanodots into SiO
IEICE Trans. Electron.
Yusuke Kato, Akio Ohta, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki
2015 J jnl
Resistance-Switching Characteristics of Si-rich Oxide Evaluated by Using Ni Nanodots as Electrodes in Conductive AFM Measurements.
IEICE Trans. Electron.
Akio Ohta, Chong Liu, Takashi Arai, Daichi Takeuchi, Hai Zhang, Katsunori Makihara, Seiichi Miyazaki
2014 J jnl
High-Sensitive Detection of Electronic Emission through Si-Nanocrystals/Si-Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy.
IEICE Trans. Electron.
Daichi Takeuchi, Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki, Hirokazu Kaki, Tsukasa Hayashi
2014 J jnl
Selective Growth of Self-Assembling Si and SiGe Quantum Dots.
IEICE Trans. Electron.
Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki
2013 J jnl
Characterization of Local Electronic Transport through Ultrathin Au/Highly-Dense Si Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy.
IEICE Trans. Electron.
Daichi Takeuchi, Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki, Hirokazu Kaki, Tsukasa Hayashi
2013 J jnl
Characterization of Resistive Switching of Pt/Si-Rich Oxide/TiN System.
IEICE Trans. Electron.
Motoki Fukusima, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki
2013 J jnl
Control of Interfacial Reaction of HfO
IEICE Trans. Electron.
Kuniaki Hashimoto, Akio Ohta, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki
2013 J jnl
Evaluation of Chemical Composition and Bonding Features of Pt/SiO
IEICE Trans. Electron.
Akio Ohta, Katsunori Makihara, Mitsuhisa Ikeda, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki
2013 J jnl
Photoexcited Carrier Transfer in a NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in MOS Structures.
IEICE Trans. Electron.
Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki
2013 J jnl
X-Ray Photoemission Study of SiO
IEICE Trans. Electron.
Akio Ohta, Katsunori Makihara, Seiichi Miyazaki, Masao Sakuraba, Junichi Murota
2012 J jnl
Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering.
IEICE Trans. Electron.
Akio Ohta, Yuta Goto, Shingo Nishigaki, Guobin Wei, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki
2011 J jnl
Characterization of Mg Diffusion into HfO
IEICE Trans. Electron.
Akio Ohta, Daisuke Kanme, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki
2011 J jnl
Impact of Annealing Ambience on Resistive Switching in Pt/TiO
IEICE Trans. Electron.
Guobin Wei, Yuta Goto, Akio Ohta, Katsunori Makihara, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki
2011 J jnl
Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor.
IEICE Trans. Electron.
Masakazu Muraguchi, Yoko Sakurai, Yukihiro Takada, Shintaro Nomura, Kenji Shiraishi, Mitsuhisa Ikeda, Katsunori Makihara, Seiichi Miyazaki, Yasuteru Shigeta, Tetsuo Endoh
2010 J jnl
Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots.
IEICE Trans. Electron.
Katsunori Makihara, Mitsuhisa Ikeda, Akira Kawanami, Seiichi Miyazaki
2009 J jnl
Formation of Pd Nanodots Induced by Remote Hydrogen Plasma and Its Application to Floating Gate MOS Memories.
IEICE Trans. Electron.
Kazuhiro Shimanoe, Katsunori Makihara, Mitsuhisa Ikeda, Seiichi Miyazaki
2008 J jnl
Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots/SiO
IEICE Trans. Electron.
Katsunori Makihara, Mitsuhisa Ikeda, Seiichiro Higashi, Seiichi Miyazaki
2007 J jnl
Evaluation of Dielectric Reliability of Ultrathin HfSiO
IEICE Trans. Electron.
Yanli Pei, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki, Seiji Inumiya, Yasuo Nara
2005 J jnl
Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate.
IEICE Trans. Electron.
Hideki Murakami, Yoshikazu Moriwaki, Masafumi Fujitake, Daisuke Azuma, Seiichiro Higashi, Seiichi Miyazaki
2005 J jnl
Characterization of Germanium Nanocrystallites Grown on SiO
IEICE Trans. Electron.
Katsunori Makihara, Yoshihiro Okamoto, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki
2005 J jnl
Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots.
IEICE Trans. Electron.
Taku Shibaguchi, Mitsuhisa Ikeda, Hideki Murakami, Seiichi Miyazaki
2005 J jnl
Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation.
IEICE Trans. Electron.
Hideki Murakami, Wataru Mizubayashi, Hirokazu Yokoi, Atsushi Suyama, Seiichi Miyazaki