Sei Seung Yoon

11 papers A* 1A 1Misc 1Journal 2Unranked 6
YearRankTypeTitle / Venue / Authors
2026 J jnl
A 14 nm SRAM Using NMOS Header Assist Cell for Improved Write Ability and Reduced Cell Retention Leakage With Minimal Power Overhead.
IEEE J. Solid State Circuits
Jungmyung Kang, Keonhee Cho, Sekeon Kim, Giseok Kim, Hyunjun Kim, Dongwook Seo, Sangyeop Baeck, Sei Seung Yoon, Seong-Ook Jung
2024 — conf
A 14nm 128Mb eMRAM Implemented with 17.88Mb/mm
VLSI Technology and Circuits
Gyuseong Kang, Hyunjin Shin, Sanggyeong Won, Dohui Kim, Kyuseong Kim, Soohoh Seol, Sunkyu Lee, Hangil Lee, Yeonho Jung, Jaechul Shim, Kiseok Suh, Sohee Hwang, Daehyun Jang, Sangyeop Baeck, Sei Seung Yoon
2023 — conf
A 14nm 128Mb Embedded MRAM Macro achieved the Best Figure-Of-Merit with 80MHz Read operation and 18.1Mb/mm² implementation at 0.64V.
VLSI Technology and Circuits
Gyuseong Kang, Hyunjin Shin, Hyuntaek Jung, Sunkyu Lee, Jaeseung Choi, Sangyeop Baeck, Hyunsung Jung, Daeshik Kim, Sohee Hwang, Shinhee Han, Yongsung Ji, Sei Seung Yoon
2014 — conf
Exploiting error-correcting codes for cache minimum supply voltage reduction while maintaining coverage for radiation-induced soft errors.
CICC
Alex Park, Venkat Narayanan, Keith A. Bowman, Francois Atallah, Alain Artieri, Sei Seung Yoon, Kendrick Yuen, David Hansquine
2014 A conf
Trading-off on-die observability for cache minimum supply voltage reduction in system-on-chip (SoC) processors.
ITC
Keith A. Bowman, Alex Park, Venkat Narayanan, Francois Atallah, Alain Artieri, Sei Seung Yoon, Kendrick Yuen, David Hansquine
2013 — conf
Analysis, modeling and silicon correlation of low-voltage flop data retention in 28nm process technology.
ISQED
Animesh Datta, Mohamed H. Abu-Rahma, Sachin Dileep Dasnurkar, Hadi Rasouli, Sean Tamjidi, Ming Cai, Samit Sengupta, P. R. Chidambaram, Raghavan Thirumala, Nikhil Kulkarni, Prasanna Seeram, Prasad Bhadri, Prayag Patel, Sei Seung Yoon, Esin Terzioglu
2013 Misc conf
Experiments and analysis to characterize logic state retention limitations in 28nm process node.
VTS
Sachin Dileep Dasnurkar, Animesh Datta, Mohamed H. Abu-Rahma, Hieu Nguyen, Martin Villafana, Hadi Rasouli, Sean Tamjidi, Ming Cai, Samit Sengupta, P. R. Chidambaram, Raghavan Thirumala, Nikhil Kulkarni, Prasanna Seeram, Prasad Bhadri, Prayag Patel, Sei Seung Yoon, Esin Terzioglu
2011 — conf
Characterization of SRAM sense amplifier input offset for yield prediction in 28nm CMOS.
CICC
Mohamed H. Abu-Rahma, Ying Chen, Wing Sy, Wee Ling Ong, Leon Yeow Ting, Sei Seung Yoon, Michael Han, Esin Terzioglu
2010 J jnl
Reducing SRAM Power Using Fine-Grained Wordline Pulsewidth Control.
IEEE Trans. Very Large Scale Integr. Syst.
Mohamed H. Abu-Rahma, Mohab Anis, Sei Seung Yoon
2008 A* conf
A methodology for statistical estimation of read access yield in SRAMs.
DAC
Mohamed H. Abu-Rahma, Kinshuk Chowdhury, Joseph Wang, Zhiqin Chen, Sei Seung Yoon, Mohab Anis
2008 — conf
A robust single supply voltage SRAM read assist technique using selective precharge.
ESSCIRC
Mohamed H. Abu-Rahma, Mohab Anis, Sei Seung Yoon