Satyabrata Jit

13 papers C 1Journal 7Unranked 5
YearRankTypeTitle / Venue / Authors
2024 — conf
A Deep Insight into Frequency and Voltage Variation Impact on Memristor Performance and Applications of Memristor-NMOS Hybrid Structure in the Digital Domain.
VDAT
Gummuluri Pavan Kumar, Manas Ranjan Tripathy, Jogendra Singh Rana, Harshit Srivastava, BSS Tejesh, Satyabrata Jit
2023 J jnl
Impact of self-heating on thermal noise in In
Microelectron. J.
P. S. T. N. Srinivas, Satyabrata Jit, Pramod Kumar Tiwari
2020 J jnl
Investigation of DC, RF and linearity performances of a back-gated (BG) heterojunction (HJ) TFET-on-selbox-substrate (STFET): Introduction to a BG-HJ-STEFT based CMOS inverter.
Microelectron. J.
Ashish Kumar Singh, Manas Ranjan Tripathy, Kamalaksha Baral, Prince Kumar Singh, Satyabrata Jit
2019 J jnl
A Target Tracking System Using Directional Nodes in Wireless Sensor Networks.
IEEE Syst. J.
Abhishek N. Tripathi, Hari Prabhat Gupta, Tanima Dutta, Durgesh Kumar, Satyabrata Jit, K. K. Shukla
2019 C conf
Subthreshold Performance Analysis of Double-Fin Multi-channel Junctionless Transistor with Substrate Bias Effects.
TENCON
Balraj Singh, Deepti Gola, Satyabrata Jit
2018 J jnl
Coverage and Connectivity in WSNs: A Survey, Research Issues and Challenges.
IEEE Access
Abhishek N. Tripathi, Hari Prabhat Gupta, Tanima Dutta, Rahul Mishra, K. K. Shukla, Satyabrata Jit
2016 — conf
Electrical and Optical Characteristics of Pd/ZnO Quantum Dots Based Schottky Photodiode on n-Si.
iNIS
Yogesh Kumar, Hemant Kumar, Gopal Rawat, Chandan Kumar, Bhola N. Pal, Satyabrata Jit
2016 — conf
Electrical and optical characteristics of CdSe Quantum Dot based Schottky diode.
ICIIS
Hemant Kumar, Yogesh Kumar, Gopal Rawat, Chandan Kumar, Bhola N. Pal, Satyabrata Jit
2016 — conf
Optical Characteristics of Solution Processed MoO2/ZnO Quantum Dots Based Thin Film Transitor.
iNIS
Hemant Kumar, Yogesh Kumar, Gopal Rawat, Chandan Kumar, Bhola N. Pal, Satyabrata Jit
2013 J jnl
Analytical modelling of the current (I)-voltage (V) characteristics of sub-micron gate-length ion-implanted GaAs MESFETs under dark and illuminated conditions.
IET Circuits Devices Syst.
Shweta Tripathi, Satyabrata Jit
2011 — conf
An Analytical Drain Current Model for Short-Channel Triple-Material Double-Gate MOSFETs.
ISVLSI
Harshit Agnihotri, Abhishek Ranjan, Pramod Kumar Tiwari, Satyabrata Jit
2010 J jnl
Modelling of doping-dependent subthreshold swing of symmetric double-gate MOSFETs.
IET Circuits Devices Syst.
Pramod Kumar Tiwari, Chinmay R. Panda, Anupam Agarwal, Pratik Sharma, Satyabrata Jit
2006 J jnl
Analytical study of the photo-effects on common-source and common-drain microwave oscillators using high pinch-off n-GaAs MESFETs.
Microelectron. J.
Satyabrata Jit, Neti V. L. Narasimha Murty