| Year | Rank | Type | Title / Venue / Authors |
|---|---|---|---|
| 2026 | J | jnl |
Sci. China Inf. Sci.
|
| 2025 | J | jnl |
Sci. China Inf. Sci.
|
| 2025 | J | jnl |
Cryptographic characteristics of true random number generators using gated silicon nanosheet diodes.
Sci. China Inf. Sci.
|
| 2025 | J | jnl |
Sci. China Inf. Sci.
|
| 2025 | J | jnl |
Adv. Intell. Syst.
|
| 2023 | J | jnl |
IEEE Access
|
| 2022 | J | jnl |
IEEE Access
|
| 2021 | J | jnl |
IEEE Access
|
| 2014 | J | jnl |
Inf. Softw. Technol.
|
| 2013 | — | conf |
ISGT
|
| 2011 | — | conf |
SSIRI
|
| 2011 | C | conf |
SEKE
|
| 2011 | J | jnl |
J. Syst. Softw.
|
| 2010 | B | conf |
FASE
|
| 2010 | J | jnl |
Sensors
|
| 2010 | J | jnl |
J. Univers. Comput. Sci.
|