Salvador Hidalgo

17 papers Journal 15Unranked 2
YearRankTypeTitle / Venue / Authors
2023 J jnl
Inverse LGAD (iLGAD) Periphery Optimization for Surface Damage Irradiation.
Sensors
Albert Doblas, David Flores, Salvador Hidalgo, Neil Moffat, Giulio Pellegrini, David Quirion, Jairo Villegas, Dzmitry Maneuski, Marie Ruat, Pablo Fajardo
2022 J jnl
Study of Ionization Charge Density-Induced Gain Suppression in LGADs.
Sensors
María del Carmen Jiménez-Ramos, Javier García López, Adrián García-Osuna, Iván Vila, Esteban Currás, Richard Jaramillo, Salvador Hidalgo, Giulio Pellegrini
2018 J jnl
Large-Area Automated Layout Extraction Methodology for Full-IC Reverse Engineering.
J. Hardw. Syst. Secur.
Raul Quijada, Roger Dura, Jofre Pallares, Xavier Formatje, Salvador Hidalgo, Francisco Serra-Graells
2016 — conf
A Verilog-A model of a silicon resistive strip for particle detectors.
SMACD
Nil Franch, Oscar Alonso, Ángel Diéguez, Salvador Hidalgo, Iván Vila
2014 J jnl
3.3 kV PT-IGBT with voltage-sensor monolithically integrated.
IET Circuits Devices Syst.
Jesús Urresti, Salvador Hidalgo, David Flores, Daniel Fernández Hevia
2014 — conf
The use of digital image processing for IC reverse engineering.
SSD
Raul Quijada, Arnau Raventos, Francesc Tarres, Roger Dura, Salvador Hidalgo
2012 J jnl
Simulation methodology for dose effects in lateral DMOS transistors.
Microelectron. J.
Pablo Fernández-Martínez, Francisco Rogelio Palomo, S. Díez, Salvador Hidalgo, Miguel Ullán, David Flores, Roland Sorge
2011 J jnl
Analysis of Clamped Inductive Turnoff Failure in Railway Traction IGBT Power Modules Under Overload Conditions.
IEEE Trans. Ind. Electron.
Xavier Perpiñà, Jean-François Serviere, Jesús Urresti-Ibañez, Ignasi Cortés, Xavier Jordà, Salvador Hidalgo, José Rebollo, Michel Mermet-Guyennet
2008 J jnl
Analysis of punch-through breakdown in bulk silicon RF power LDMOS transistors.
Microelectron. Reliab.
Ignasi Cortés, Pablo Fernández-Martínez, David Flores, Salvador Hidalgo, José Rebollo
2008 J jnl
IGBT module failure analysis in railway applications.
Microelectron. Reliab.
X. Perpiñà, Jean-François Serviere, Xavier Jordà, A. Fauquet, Salvador Hidalgo, Jesús Urresti-Ibañez, José Rebollo, Michel Mermet-Guyennet
2008 J jnl
Superjunction LDMOS on thick-SOI technology for RF applications.
Microelectron. J.
Ignasi Cortés, Pablo Fernández-Martínez, David Flores, Salvador Hidalgo, José Rebollo
2005 J jnl
Analysis of hot-carrier degradation in a SOI LDMOS transistor with a steep retrograde drift doping profile.
Microelectron. Reliab.
Ignasi Cortés, Jaume Roig, David Flores, Jesús Urresti, Salvador Hidalgo, José Rebollo
2005 J jnl
Lateral punch-through TVS devices for on-chip protection in low-voltage applications.
Microelectron. Reliab.
Jesús Urresti, Salvador Hidalgo, David Flores, Jaume Roig, Ignasi Cortés, José Rebollo
2004 J jnl
Design considerations for 6.5 kV IGBT devices.
Microelectron. J.
Miquel Vellvehí, David Flores, Xavier Jordà, Salvador Hidalgo, José Rebollo, L. Coulbeck, P. Waind
2004 J jnl
Thin-film silicon-on-sapphire LDMOS structures for RF power amplifier applications.
Microelectron. J.
Jaume Roig, David Flores, Salvador Hidalgo, José Rebollo, José Millán
2003 J jnl
Optimisation of very low voltage TVS protection devices.
Microelectron. J.
Jesús Urresti, Salvador Hidalgo, David Flores, Jaume Roig, José Rebollo, I. Mazarredo
2003 J jnl
Passivation and packaging of positive bevelled edge termination and related electrical stability.
Microelectron. Reliab.
Salvador Hidalgo, David Flores, Isabel Obieta, I. Mazarredo