Sachin Yadav - RankMe

11 papers Unranked 11

Year	Rank	Type	Title / Venue / Authors
2025	—	`conf`	Evolution of GaN HEMT Small-Signal Parameters During Semi-on State for RF/MM-Wave Applications. IRPS Aarti Rathi, Barry J. O'Sullivan, Rana ElKashlan, B. Kazemi Esfeh, Arturo Sibaja Hernandez, Hao Yu, AliReza Alian, Sachin Yadav, Uthayasankaran Peralagu, Adrian Vaisman Chasin, Bertrand Parvais, Nadine Collaert
2025	—	`conf`	Perspectives on GaN MISHEMT Power Amplifier Versus Positive Gate Bias Instability. IRPS Hao Yu, Rana ElKashlan, Meng-Che Tsai, Yi Yang, Mamoun Guenach, Ying-Chun Kuo, Sachin Yadav, Barry J. O'Sullivan, Aarti Rathi, Amratansh Gupta, Dongping Xiao, Claude Desset, AliReza Alian, Uthayasankaran Peralagu, Valeri Afans'ev, Tian-Li Wu, Bertrand Parvais, Nadine Collaert
2025	—	`conf`	Physical Insights into High Current Collapse under ON-state Stress in RF GaN HEMTs. IRPS Amratansh Gupta, Hao Yu, Sachin Yadav, AliReza Alian, Uthavasankaran Peralagu, E.-San Jang, Ying-Chun Kuo, Nadine Collaert, Bertrand Parvais
2025	—	`conf`	Toward Understanding Stability of RF MIS-HEMTs Under ON/SEMI-ON/OFF-State Pulses with Scaling in-situ SiN Thicknesses. IRPS Yi Yang, Hao Yu, Meng-Che Tsai, Wei-Tung Lin, Ying-Chun Kuo, Barry J. O'Sullivan, Aarti Rathi, Amratansh Gupta, Sachin Yadav, AliReza Alian, Uthayasankaran Peralagu, Bertrand Parvais, Nadine Collaert, Tian-Li Wu
2024	—	`conf`	DC Reliability Study of $\text{high}-\kappa$ GaN-on-Si MOS-HEMT's for mm-Wave Power Amplifiers. IRPS Barry J. O'Sullivan, AliReza Alian, Arturo Sibaja Hernandez, Jacopo Franco, Sachin Yadav, Hao Yu, Aarti Rathi, Uthayasankaran Peralagu, Adrian Vaisman Chasin, Bertrand Parvais, Nadine Collaert
2023	—	`conf`	A Composite AlGaN/cGaN Back Barrier for mm-Wave GaN-on-Si HEMTs. ESSDERC Rana Y. El Kashlan, Hao Yu, Ahmad Khaled, Sachin Yadav, Uthayasankaran Peralagu, AliReza Alian, Nadine Collaert, Piet Wambacq, Bertrand Parvais
2022	—	`conf`	III-V HBTs on 300 mm Si substrates using merged nano-ridges and its application in the study of impact of defects on DC and RF performance. ESSDERC Abhitosh Vais, Sachin Yadav, Yves Mols, Bjorn Vermeersch, Komal Vondkar Kodandarama, Marina Baryshnikova, G. Mannaert, R. Alcotte, Geert Boccardi, Piet Wambacq, Bertrand Parvais, R. Langer, Bernardette Kunert, Nadine Collaert
2022	—	`conf`	Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer. ESSDERC AliReza Alian, Raúl Rodríguez, Sachin Yadav, Uthayasankaran Peralagu, Arturo Sibaja Hernandez, Vamsi Putcha, Ming Zhao, Rana Y. El Kashlan, Bjorn Vermeersch, Hao Yu, Erik Bury, Ahmad Khaled, Nadine Collaert, Bertrand Parvais
2022	—	`conf`	Interpretation and modelling of dynamic-RON kinetics in GaN-on-Si HEMTs for mm-wave applications. IRPS Vamsi Putcha, Hao Yu, Jacopo Franco, Sachin Yadav, AliReza Alian, Uthayasankaran Peralagu, Bertrand Parvais, Nadine Collaert
2021	—	`conf`	CMOS compatible GaN-on-Si HEMT technology for RF applications: analysis of substrate losses and non-linearities. ICICDT Sachin Yadav, Pieter Cardinael, Ming Zhao, Komal Vondkar, Uthayasankaran Peralagu, AliReza Alian, Ahmad Khaled, Sergej Makovejev, Enrique Ekoga, Dimitri Lederer, Jean-Pierre Raskin, Bertrand Parvais, Nadine Collaert
2021	—	`conf`	Impact of III-N buffer layers on RF losses and harmonic distortion of GaN-on-Si Substrates. ESSDERC Pieter Cardinael, Sachin Yadav, Ming Zhao, Martin Rack, Dimitri Lederer, Nadine Collaert, Bertrand Parvais, Jean-Pierre Raskin