Rüdiger Quay

26 papers C 1Journal 14Unranked 11
YearRankTypeTitle / Venue / Authors
2025 — conf
Advancing Wound Management with Smart and Sustainable Electronics for a Human-Environment-Centric Society: A Life Cycle Assessment Approach.
ICECS
Theresa Seeholzer, Adrian-Razvan Petre, Shavini Stuart-Wijesuriya, Rüdiger Quay
2024 — conf
32.5 E-band (71-to-86GHz) GaN Power Amplifier with 4.37W Output Power and 18.5% PAE for 5G Backhaul.
ISSCC
Bharath Cimbili, Mingquan Bao, Christian Friesicke, Rüdiger Quay
2024 — conf
ASM-GaN Model for Resistive Mixer Applications at D-Band Frequencies.
BCICTS
Cristina Maurette-Blasini, Dirk Schwantuschke, Sayed Ali Albahrani, Peter Brückner, Konstantin Kuliabin, Sébastien Chartier, Rüdiger Quay
2024 — conf
Scaling of GaN FinFETs on 4 Inch Silicon Carbide from 20 to 150 Fins with Maximum Frequency of Oscillation fmax = 20.4 GHz.
DRC
Matthias Sinnwell, Michael Dammann, Rachid Driad, Stefano Leone, Michael Mikulla, Rüdiger Quay
2023 — conf
Normally-off quasi-vertical GaN FinFET on SiC substrate with record small-signal current gain of $\mathrm{f}_{\mathrm{t}}=10.2$ GHz.
DRC
Matthias Sinnwell, Michael Dammann, Rachid Driad, Sebastian Krause, Stefano Leone, Michael Mikulla, Rüdiger Quay
2023 — conf
Single-Ended Resistive Down-Converter MMICs in InGaAs mHEMT and GaN-HEMT Technologies for D-Band (110-170 GHz) Applications.
BCICTS
Cristina Maurette-Blasini, Rainer Weber, Sandrine Wagner, Dirk Schwantuschke, Sébastien Chartier, Rüdiger Quay
2023 J jnl
Three-Phase Motor Inverter and Current Sensing GaN Power IC.
Sensors
Stefan Moench, Richard Reiner, Michael Basler, Daniel Grieshaber, Fouad Benkhelifa, Patrick Waltereit, Rüdiger Quay
2023 C conf
X-Band 100-W High-Voltage GaN Internally Matched FET with Low Gain Compression.
IGARSS
Sebastian Krause, Rüdiger Quay
2021 J jnl
Building Blocks for GaN Power Integration.
IEEE Access
Michael Basler, Richard Reiner, Stefan Moench, Fouad Benkhelifa, Philipp Döring, Patrick Waltereit, Rüdiger Quay, Oliver Ambacher
2020 — conf
Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress.
IRPS
Tobias Kemmer, Michael Dammann, Martina Baeumler, Vladimir Polyakov, Peter Brückner, Helmer Konstanzer, Rüdiger Quay, Oliver Ambacher
2018 J jnl
Comparison of reliability of 100 nm AlGaN/GaN HEMTs with T-gate and SAG-gate technology.
Microelectron. Reliab.
Maximilian Dammann, Martina Baeumler, Peter Brückner, Tobias Kemmer, Helmer Konstanzer, Andreas Graff, Michél Simon-Najasek, Rüdiger Quay
2017 J jnl
Reliability of 100 nm AlGaN/GaN HEMTs for mm-wave applications.
Microelectron. Reliab.
Maximilian Dammann, Martina Baeumler, Vladimir Polyakov, Peter Brückner, Helmer Konstanzer, Rüdiger Quay, Michael Mikulla, Andreas Graff, Michél Simon-Najasek
2016 — conf
Performance of tri-gate AlGaN/GaN HEMTs.
ESSDERC
Mohamed Alsharef, Ralf Granzner, Frank Schwierz, Erdin Ture, Rüdiger Quay, Oliver Ambacher
2015 — conf
A high-power Ka-band single-pole single-throw switch MMIC using 0.25 µm GaN on SiC.
RWS
Saqib Kaleem, Jutta Kuhn, Rüdiger Quay, Matthias Hein
2015 J jnl
Degradation of 0.25 μm GaN HEMTs under high temperature stress test.
Microelectron. Reliab.
Maximilian Dammann, Martina Baeumler, Peter Brückner, Wolfgang Bronner, Stephan Maroldt, Helmer Konstanzer, Matthias Wespel, Rüdiger Quay, Michael Mikulla, Andreas Graff, M. Lorenzini, M. Fagerlind, P. J. van der Wel, T. Rödle
2015 — conf
High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs.
IRPS
Matthias Wespel, Maximilian Dammann, Vladimir Polyakov, Richard Reiner, Patrick Waltereit, B. Weiss, Rüdiger Quay, Michael Mikulla, Oliver Ambacher
2014 J jnl
Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices.
Microelectron. Reliab.
Matthias Wespel, Martina Baeumler, Vladimir Polyakov, Maximilian Dammann, Richard Reiner, Patrick Waltereit, Rüdiger Quay, Michael Mikulla, Oliver Ambacher
2011 J jnl
Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs.
Microelectron. Reliab.
M. Cäsar, Maximilian Dammann, Vladimir Polyakov, Patrick Waltereit, Rüdiger Quay, Michael Mikulla, Oliver Ambacher
2011 — conf
Multiband Doherty RF power amplifier.
AFRICON
Patrick Jueschke, Dirk Wiegner, Gerhard Luz, R. Machinal, Andreas Pascht, Rüdiger Quay
2010 J jnl
Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz.
IEICE Trans. Electron.
Stephan Maroldt, Dirk Wiegner, Stanislav Vitanov, Vassil Palankovski, Rüdiger Quay, Oliver Ambacher
2009 J jnl
Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems.
Microelectron. Reliab.
Maximilian Dammann, W. Pletschen, Patrick Waltereit, Wolfgang Bronner, Rüdiger Quay, Stefan Müller, Michael Mikulla, Oliver Ambacher, P. J. van der Wel, S. Murad, T. Rödle, R. Behtash, F. Bourgeois, K. Riepe, Martin Fagerlind, Einar Örn Sveinbjörnsson
2006 J jnl
InP DHBT Based IC Technology for over 80 Gbit/s Data Communications.
IEICE Trans. Electron.
Rachid Driad, Robert E. Makon, Karl Schneider, Ulrich Nowotny, Rolf Aidam, Rüdiger Quay, Michael Schlechtweg, Michael Mikulla, Günter Weimann
2006 J jnl
InP DHBT-Based Monolithically Integrated CDR/DEMUX IC Operating at 80 Gbit/s.
IEEE J. Solid State Circuits
Robert E. Makon, Rachid Driad, Karl Schneider, Manfred Ludwig, Rolf Aidam, Rüdiger Quay, Michael Schlechtweg, Günter Weimann
2004 J jnl
Reliability of 70 nm metamorphic HEMTs.
Microelectron. Reliab.
Maximilian Dammann, Arnulf Leuther, Rüdiger Quay, M. Meng, Helmer Konstanzer, W. Jantz, Michael Mikulla
2003 J jnl
A 4-W X-band compact coplanar high-power amplifier MMIC with 18-dB gain and 25% PAE.
IEEE J. Solid State Circuits
Alexandre Bessemoulin, Rüdiger Quay, Suitbert Ramberger, Hermann Massler, Michael Schlechtweg
2001 J jnl
Industrial application of heterostructure device simulation.
IEEE J. Solid State Circuits
Vassil Palankovski, Rüdiger Quay, Siegfried Selberherr