Ryuichi Nakajima

13 papers C 3Journal 4Unranked 6
YearRankTypeTitle / Venue / Authors
2025 C conf
Comparative Analysis of TID Effects in a 65 nm FD-SOI Process Under Gamma-Ray and Alpha-Ray Irradiation.
IOLTS
Hikaru Nakamoto, Taiki Ozawa, Ryuichi Nakajima, Haruto Sugisaki, Keita Yoshida, Jun Furuta, Kazutoshi Kobayashi
2025 — conf
Cryo-HT: Hardware Trojan Activated at Cryogenic Temperatures.
ASP-DAC
Ayano Takaya, Ryuichi Nakajima, Jun Shiomi, Michihiro Shintani
2025 J jnl
Radiation-Hardened Flip-Flops in a 65 nm Bulk Process for Terrestrial Applications Coping with Radiation Hardness and Performance Overheads.
IEICE Trans. Electron.
Shotaro Sugitani, Ryuichi Nakajima, Keita Yoshida, Jun Furuta, Kazutoshi Kobayashi
2024 — conf
A Partially-redundant Flip-flip Suitable for Mitigating Single Event Upsets in a FD-SOI Process with Low Performance Overhead.
IRPS
Jun Furuta, Shotaro Sugitani, Ryuichi Nakajima, Kazutoshi Kobayashi
2024 — conf
An Approach to Neutron-Induced SER Evaluation Using a Clinical 290 MeV/ u Carbon Beam and Particle Transport Simulations.
IRPS
Ryuichi Nakajima, Shotaro Sugitani, Haruto Sugisaki, Takafumi Ito, Jun Furuta, Kazutoshi Kobayashi, Makoto Sakai
2024 J jnl
Frequency dependence of soft error rates induced by alpha-particle and heavy ion.
IEICE Electron. Express
Haruto Sugisaki, Ryuichi Nakajima, Shotaro Sugitani, Jun Furuta, Kazutoshi Kobayashi
2024 J jnl
Measuring SET Pulse Widths in pMOSFETs and nMOSFETs Separately by Heavy Ion and Neutron Irradiation.
IEICE Trans. Electron.
Jun Furuta, Shotaro Sugitani, Ryuichi Nakajima, Takafumi Ito, Kazutoshi Kobayashi
2024 J jnl
Soft-Error Tolerance by Guard-Gate Structures on Flip-Flops in 22 and 65 nm FD-SOI Technologies.
IEICE Trans. Electron.
Ryuichi Nakajima, Takafumi Ito, Shotaro Sugitani, Tomoya Kii, Mitsunori Ebara, Jun Furuta, Kazutoshi Kobayashi, Mathieu Louvat, Francois Jacquet, Jean-Christophe Eloy, Olivier Montfort, Lionel Jure, Vincent Huard
2023 — conf
Frequency Dependency of Soft Error Rates Based on Dynamic Soft Error Measurements.
ICICDT
Haruto Sugisaki, Ryuichi Nakajima, Shotaro Sugitani, Jun Furuta, Kazutoshi Kobayashi
2023 — conf
Radiation Hardened Flip-Flops with low Area, Delay and Power Overheads in a 65 nm bulk process.
IRPS
Shotaro Sugitani, Ryuichi Nakajima, Keita Yoshida, Jun Furuta, Kazutoshi Kobayashi
2023 C conf
Radiation Hardness Evaluations of a Stacked Flip Flop in a 22 nm FD-SOI Process by Heavy-Ion Irradiation.
IOLTS
Shotaro Sugitani, Ryuichi Nakajima, Takafumi Ito, Jun Furuta, Kazutoshi Kobayashi, Mathieu Louvat, Francois Jacquet, Jean-Christophe Eloy, Olivier Montfort, Lionel Jure, Vincent Huard
2023 — conf
SEU Sensitivity of PMOS and NMOS Transistors in a 65 nm Bulk Process by α-Particle Irradiation.
ICICDT
Keita Yoshida, Ryuichi Nakajima, Shotaro Sugitani, Takafumi Ito, Jun Furuta, Kazutoshi Kobayashi
2022 C conf
Radiation Hardened Flip-Flops Minimizing Area, Power, and Delay Overheads with 1/100 Lower α-SER in a 130 nm Bulk Process.
IOLTS
Ryuichi Nakajima, Kazuya Ioki, Jun Furuta, Kazutoshi Kobayashi