Ronald D. Schrimpf

21 papers Journal 15Unranked 6
YearRankTypeTitle / Venue / Authors
2024 — conf
Charge Trapping in Irradiated 3D Devices and ICs (Invited).
IRPS
En-xia Zhang, Shintaro Toguchi, Zi Xiang Guo, Michael L. Alles, Ronald D. Schrimpf, Daniel M. Fleetwood
2023 — conf
Single-Event Burnout by Cf-252 Irradiation in Vertical $\beta$-Ga2O3 Diodes with Pt and PtOx Schottky Contacts and High Permittivity Dielectric Field Plate.
DRC
Sajal Islam, Aditha S. Senarath, Arijit Sengupta, En-xia Zhang, Dennis R. Ball, Daniel M. Fleetwood, Ronald D. Schrimpf, Esmat Farzana, Arkka Bhattacharyya, Nolan S. Hendricks, James S. Speck
2021 — conf
Effects of Charge Generation and Trapping on the X-ray Response of Strained AlGaN/GaN HEMTs.
ASICON
Peng Wang, En-xia Zhang, Daniel M. Fleetwood, Peng Fei Wang, Michael W. McCurdy, Ji-Tzouh Lin, Michael L. Alles, Jim L. Davidson, Bruce W. Alphenaar, Ronald D. Schrimpf
2018 J jnl
A TCAD evaluation of a single Bulk-BICS with integrative memory cell.
Microelectron. J.
Alexandre Simionovski, Gilson I. Wirth, Ronald D. Schrimpf, Bharat L. Bhuva
2015 — conf
Influence of supply voltage on the multi-cell upset soft error sensitivity of dual- and triple-well 28 nm CMOS SRAMs.
IRPS
Balaji Narasimham, Jung K. Wang, Narayana Vedula, Saket Gupta, Brandon Bartz, Carl Monzel, Indranil Chatterjee, Bharat L. Bhuva, Ronald D. Schrimpf, Robert A. Reed
2015 — conf
Proton irradiation-induced traps causing VT instabilities and RF degradation in GaN HEMTs.
IRPS
A. Sasikumar, Z. Zhang, P. Kumar, En-xia Zhang, Daniel M. Fleetwood, Ronald D. Schrimpf, Paul Saunier, Cathy Lee, S. A. Ringel, Aaron R. Arehart
2014 J jnl
Comparison between trap and self-heating induced mobility degradation in AlGaN/GaN HEMTs.
Microelectron. Reliab.
Aditya Kalavagunta, Shubhajit Mukherjee, Robert A. Reed, Ronald D. Schrimpf
2014 J jnl
Total-ionizing-dose effects and reliability of carbon nanotube FET devices.
Microelectron. Reliab.
Cher Xuan Zhang, En-xia Zhang, Daniel M. Fleetwood, Michael L. Alles, Ronald D. Schrimpf, Chris Rutherglen, Kosmas Galatsis
2013 J jnl
An efficient technique to select logic nodes for single event transient pulse-width reduction.
Microelectron. Reliab.
Nihaar N. Mahatme, Indranil Chatterjee, Akash Patki, Daniel B. Limbrick, Bharat L. Bhuva, Ronald D. Schrimpf, William H. Robinson
2012 J jnl
The impact of device width on the variability of post-irradiation leakage currents in 90 and 65 nm CMOS technologies.
Microelectron. Reliab.
Nadia Rezzak, Pierre Maillard, Ronald D. Schrimpf, Michael L. Alles, Daniel M. Fleetwood, Yanfeng Albert Li
2011 J jnl
1/f Noise in GaN HEMTs grown under Ga-rich, N-rich, and NH
Microelectron. Reliab.
Tania Roy, Yevgeniy S. Puzyrev, En-xia Zhang, Sandeepan DasGupta, Sarah A. Francis, Daniel M. Fleetwood, Ronald D. Schrimpf, Umesh K. Mishra, Jim S. Speck, Sokrates T. Pantelides
2011 J jnl
High fluence 1.8 MeV proton irradiation effects on n-type MOS capacitors.
Microelectron. Reliab.
R. Arinero, En-xia Zhang, Nadia Rezzak, Ronald D. Schrimpf, Daniel M. Fleetwood, B. K. Choï, A. B. Hmelo, Julien Mekki, Antoine D. Touboul, Frédéric Saigné
2011 J jnl
The sensitivity of radiation-induced leakage to STI topology and sidewall doping.
Microelectron. Reliab.
Nadia Rezzak, Michael L. Alles, Ronald D. Schrimpf, Sarah Kalemeris, Lloyd W. Massengill, John Sochacki, Hugh J. Barnaby
2009 — conf
Performance, reliability, radiation effects, and aging issues in microelectronics - from atomic-scale physics to engineering-level modeling.
ESSCIRC
Sokrates T. Pantelides, L. Tsetseris, M. J. Beck, Sergey N. Rashkeev, G. Hadjisavvas, I. G. Batyrev, B. R. Tuttle, A. G. Marinopoulos, X. J. Zhou, Daniel M. Fleetwood, Ronald D. Schrimpf
2008 J jnl
Total ionizing dose effects in shallow trench isolation oxides.
Microelectron. Reliab.
Federico Faccio, Hugh J. Barnaby, Xiao J. Chen, Daniel M. Fleetwood, Laura Gonella, Michael L. McLain, Ronald D. Schrimpf
2007 J jnl
Effects of device aging on microelectronics radiation response and reliability.
Microelectron. Reliab.
Daniel M. Fleetwood, M. P. Rodgers, L. Tsetseris, X. J. Zhou, I. Batyrev, S. Wang, Ronald D. Schrimpf, Sokrates T. Pantelides
2007 J jnl
Hydrogen in MOSFETs - A primary agent of reliability issues.
Microelectron. Reliab.
Sokrates T. Pantelides, L. Tsetseris, Sergey N. Rashkeev, X. J. Zhou, Daniel M. Fleetwood, Ronald D. Schrimpf
2006 J jnl
Single event burnout in power diodes: Mechanisms and models.
Microelectron. Reliab.
A. M. Albadri, Ronald D. Schrimpf, Kenneth F. Galloway, D. Greg Walker
2005 J jnl
Single event transient effects in a voltage reference.
Microelectron. Reliab.
P. C. Adell, Ronald D. Schrimpf, C. R. Cirba, W. T. Holman, X. Zhu, Hugh J. Barnaby, O. Mion
2001 J jnl
A generalized model for the lifetime of microelectronic components, applied to storage conditions.
Microelectron. Reliab.
Loren J. Wise, Ronald D. Schrimpf, Harold G. Parks, Kenneth F. Galloway
2001 J jnl
Thermal modeling of single event burnout failure in semiconductor power devices.
Microelectron. Reliab.
D. Greg Walker, T. S. Fisher, J. Liu, Ronald D. Schrimpf