Robin Degraeve

46 papers Journal 14Unranked 32

Year	Rank	Type	Title / Venue / Authors
2025	—	`conf`	Advanced RTN Analysis on 3D NAND Trench Devices Using Physics-Informed Machine Learning Framework. IRPS Yusuke Higashi, Anirudh Varanasi, Philippe J. Roussel, Pablo Saraza-Canflanca, J. P. Bastos, Alexander Grill, E. Catapano, Ruben Asanovski, Jacopo Franco, Ben Kaczer, Adrian Chasin, Devin Verreck, S. Ramesh, Laurent Breuil, Antonio Arreghini, S. Rachidi, Y. Jeong, Geert Van den Bosch, Maarten Rosmeulen, Robin Degraeve
2025	—	`conf`	Algorithm for Robust Correction of Long-Term Drift Components in Gate Leakage Current RTN Data. IRPS Anirudh Varanasi, Robin Degraeve, Philippe J. Roussel, Clement Merckling
2025	—	`conf`	Effects of Temperature and Device-to-Device Variability in pFET-Based Bias Temperature Instability Reservoir Computing. IRPS Yuanyang Guo, Robin Degraeve, Pablo Saraza-Canflanca, Ben Kaczer, Erik Bury, Ingrid Verbauwhede
2025	—	`conf`	Investigation of Cryogenic Aging in 28 nm CMOS: Suppression of BTI and HCD in Circuits and SRAM. IRPS Javier Diaz-Fortuny, Mahdi Benkhelifa, Alexander Grill, Erik Bury, Robin Degraeve, Ben Kaczer, Hussam Amrouch
2025	J	`jnl`	RTNinja: a generalized machine learning framework for analyzing random telegraph noise signals in nanoelectronic devices. CoRR Anirudh Varanasi, Robin Degraeve, Philippe Roussel, Clement Merckling
2025	—	`conf`	TDDB Reliability Improvement of Low Thermal Budget RMG Stacks. IRPS G. Molinaro, Hiroaki Arimura, S. Sacchi, Andrea Vici, Robin Degraeve, Ben Kaczer, Naoto Horiguchi, M. Houssa, Jacopo Franco
2024	—	`conf`	Comprehensive Performance and Reliability Assessment of Se-based Selector-Only Memory. IRPS Taras Ravsher, Robin Degraeve, Daniele Garbin, Sergiu Clima, Andrea Fantini, Gabriele Luca Donadio, Shreya Kundu, Wouter Devulder, Hubert Hody, Goedele Potoms, Jan Van Houdt, Valeri Afanas'ev, Attilio Belmonte, Gouri Sankar Kar
2024	—	`conf`	Demonstration of Chip Overclock Detection by Employing Tamper-Aware Odometer Technology. IRPS Javier Diaz-Fortuny, Pablo Saraza-Canflanca, Alex Romano-Molar, Erik Bury, Robin Degraeve, Ben Kaczer
2024	—	`conf`	Exploiting Bias Temperature Instability for Reservoir Computing in Edge Artificial Intelligence Applications. IRPS Y. Guo, Robin Degraeve, Michiel Vandemaele, Pablo Saraza-Canflanca, Jacopo Franco, Ben Kaczer, Erik Bury, Ingrid Verbauwhede
2024	—	`conf`	Physics-informed machine learning to analyze oxide defect-induced RTN in gate leakage current. IRPS Anirudh Varanasi, Robin Degraeve, Philippe J. Roussel, Andrea Vici, Clement Merckling
2024	—	`conf`	Reducing Reservoir Dimensionality with Phase Space Construction for Simplified Hardware Implementation. ICANN (10) Yuanyang Guo, Robin Degraeve, Philippe Roussel, Ben Kaczer, Erik Bury, Ingrid Verbauwhede
2024	—	`conf`	SILC and TDDB reliability of novel low thermal budget RMG gate stacks. IRPS Andrea Vici, Robin Degraeve, Naoto Horiguchi, Ingrid De Wolf, Jacopo Franco
2023	—	`conf`	Analysis of TDDB lifetime projection in low thermal budget HfO2/SiO2 stacks for sequential 3D integrations. IRPS Andrea Vici, Robin Degraeve, Philippe J. Roussel, Jacopo Franco, Ben Kaczer, Ingrid De Wolf
2023	J	`jnl`	Benchmarking of Machine Learning Methods for Multiscale Thermal Simulation of Integrated Circuits. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. David Coenen, Herman Oprins, Robin Degraeve, Ingrid De Wolf
2023	—	`conf`	Improving the Tamper-Aware Odometer Concept by Enhancing Dynamic Stress Operation. IRPS Javier Diaz-Fortuny, Dishant Sangani, Pablo Saraza-Canflanca, Erik Bury, Robin Degraeve, Ben Kaczer
2023	—	`conf`	Using dedicated device arrays for the characterization of TDDB in a scaled HK/MG technology. IRPS Pablo Saraza-Canflanca, Javier Diaz-Fortuny, Andrea Vici, Erik Bury, Robin Degraeve, Ben Kaczer
2022	—	`conf`	A Ring-Oscillator-Based Degradation Monitor Concept with Tamper Detection Capability. IRPS Javier Diaz-Fortuny, Pablo Saraza-Canflanca, Erik Bury, Michiel Vandemaele, Ben Kaczer, Robin Degraeve
2022	—	`conf`	Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery. IRPS J. P. Bastos, Barry J. O'Sullivan, Jacopo Franco, Stanislav Tyaginov, Brecht Truijen, Adrian Vaisman Chasin, Robin Degraeve, Ben Kaczer, Romain Ritzenthaler, Elena Capogreco, E. Dentoni Litta, Alessio Spessot, Yusuke Higashi, Y. Yoon, V. Machkaoutsan, Pierre Fazan, N. Horiguchi
2022	—	`conf`	Combining SILC and BD statistics for low-voltage lifetime projection in HK/MG stacks. IRPS Andrea Vici, Robin Degraeve, João Pedro Bastos, Philippe Roussel, Ingrid De Wolf
2022	—	`conf`	Enhanced performance and low-power capability of SiGeAsSe-GeSbTe 1S1R phase-change memory operated in bipolar mode. VLSI Technology and Circuits Taras Ravsher, Daniele Garbin, Andrea Fantini, Robin Degraeve, Sergiu Clima, Gabriele Luca Donadio, Shreya Kundu, Hubert Hody, Wouter Devulder, Jan Van Houdt, Valeri Afanas'ev, Romain Delhougne, Gouri Sankar Kar
2022	—	`conf`	Insight to Data Retention loss in ferroelectric Hf0.5Zr0.5O2 pFET and nFET from simultaneous PV and IV measurements. VLSI Technology and Circuits Md Nur K. Alam, Yusuke Higashi, Brecht Truijen, Ben Kaczer, Mihaela Ioana Popovici, Bj O'Sullivan, Philippe Roussel, Robin Degraeve, Marc M. Heyns, Jan Van Houdt
2022	—	`conf`	Significant Enhancement of HCD and TDDB in CMOS FETs by Mechanical Stress. IRPS Kookjin Lee, Ben Kaczer, Anastasiia Kruv, Mario Gonzalez, Geert Eneman, Oguzhan O. Okudur, Alexander Grill, Jacopo Franco, Andrea Vici, Robin Degraeve, Ingrid De Wolf
2021	—	`conf`	Modeling and spectroscopy of ovonic threshold switching defects. IRPS Robin Degraeve, Taras Ravsher, Shoichi Kabuyanagi, Andrea Fantini, Sergiu Clima, Daniele Garbin, Gouri Sankar Kar
2021	—	`conf`	The properties, effect and extraction of localized defect profiles from degraded FET characteristics. IRPS Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Jacopo Franco, Robin Degraeve, Adrian Vaisman Chasin, Zhicheng Wu, Erik Bury, Yang Xiang, Hans Mertens, Guido Groeseneken
2021	—	`conf`	Threshold switching in a-Si and a-Ge based MSM selectors and its implications for device reliability. IMW Taras Ravsher, Shamin H. Sharifi, Andrea Fantini, Hubert Hody, Thomas Witters, Daniele Garbin, Robin Degraeve, Valeri Afanas'ev, Jan Van Houdt, Ludovic Goux, D. Crotti, Gouri Sankar Kar
2019	J	`jnl`	A Physically Unclonable Function Using Soft Oxide Breakdown Featuring 0% Native BER and 51.8 fJ/bit in 40-nm CMOS. IEEE J. Solid State Circuits Kai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, Dimitri Linten, Ingrid Verbauwhede
2019	—	`conf`	Low Voltage Transient RESET Kinetic Modeling of OxRRAM for Neuromorphic Applications. IRPS Jonas Doevenspeck, Robin Degraeve, Andrea Fantini, Peter Debacker, Diederik Verkest, Rudy Lauwereins, Wim Dehaene
2018	J	`jnl`	A Cautionary Note When Looking for a Truly Reconfigurable Resistive RAM PUF. IACR Trans. Cryptogr. Hardw. Embed. Syst. Kai-Hsin Chuang, Robin Degraeve, Andrea Fantini, Guido Groeseneken, Dimitri Linten, Ingrid Verbauwhede
2018	—	`conf`	A Physically Unclonable Function with 0% BER Using Soft Oxide Breakdown in 40nm CMOS. A-SSCC Kai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, Dimitri Linten, Ingrid Verbauwhede
2018	—	`conf`	A multi-bit/cell PUF using analog breakdown positions in CMOS. IRPS Kai-Hsin Chuang, Erik Bury, Robin Degraeve, Ben Kaczer, T. Kallstenius, Guido Groeseneken, Dimitri Linten, Ingrid Verbauwhede
2018	—	`conf`	Analytic variability study of inference accuracy in RRAM arrays with a binary tree winner-take-all circuit for neuromorphic applications. ESSDERC Jonas Doevenspeck, Robin Degraeve, Stefan Cosemans, Philippe Roussel, Bram-Ernst Verhoef, Rudy Lauwereins, Wim Dehaene
2018	—	`conf`	Investigation of the endurance of FE-HfO2 devices by means of TDDB studies. IRPS Karine Florent, A. Subirats, Simone Lavizzari, Robin Degraeve, Umberto Celano, Ben Kaczer, Luca Di Piazza, Mihaela Ioana Popovici, Guido Groeseneken, Jan Van Houdt
2018	—	`conf`	Monolithically integrated 1 TFT-1RRAM non-volatile memory cells fabricated on PI flexible substrate. ESSDERC Ana Lebanov, Andrea Fantini, Robin Degraeve, Manoj Nag, Myriam Willegems, Steve Smout, Soeren Steudel, Jan Genoe, Paul Heremans, Kris Myny
2018	—	`conf`	Study of breakdown in STT-MRAM using ramped voltage stress and all-in-one maximum likelihood fit. ESSDERC Simon Van Beek, Philippe Roussel, Barry J. O'Sullivan, Robin Degraeve, Stefan Cosemans, Dimitri Linten, Gouri Sankar Kar
2015	—	`conf`	Engineering of a TiN\Al2O3\(Hf, Al)O2\Ta2O5\Hf RRAM cell for fast operation at low current. ESSDERC C. Y. Chen, Ludovic Goux, Andrea Fantini, Robin Degraeve, Augusto Redolfi, Guido Groeseneken, Malgorzata Jurczak
2015	—	`conf`	The defect-centric perspective of device and circuit reliability - From individual defects to circuits. ESSDERC Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Erik Bury, Moonju Cho, Robin Degraeve, Dimitri Linten, Guido Groeseneken, Halil Kukner, Praveen Raghavan, Francky Catthoor, Gerhard Rzepa, Wolfgang Gös, Tibor Grasser
2014	J	`jnl`	As-grown donor-like traps in low-k dielectrics and their impact on intrinsic TDDB reliability. Microelectron. Reliab. Baojun Tang, Kris Croes, Yohan Barbarin, Yunqi Wang, Robin Degraeve, Yunlong Li, Maria Toledano-Luque, Thomas Kauerauf, Jürgen Bömmels, Zsolt Tökei, Ingrid De Wolf
2007	J	`jnl`	Distribution and generation of traps in SiO Microelectron. Reliab. Isodiana Crupi, Robin Degraeve, Bogdan Govoreanu, David P. Brunco, Philippe Roussel, Jan Van Houdt
2007	J	`jnl`	Gate oxide breakdown in FET devices and circuits: From nanoscale physics to system-level reliability. Microelectron. Reliab. Ben Kaczer, Robin Degraeve, Philippe Roussel, Guido Groeseneken
2006	J	`jnl`	Implementation of plug-and-play ESD protection in 5.5GHz 90nm RF CMOS LNAs - Concepts, constraints and solutions. Microelectron. Reliab. Steven Thijs, M. Natarajan Iyer, Dimitri Linten, Wutthinan Jeamsaksiri, T. Daenen, Robin Degraeve, Andries J. Scholten, Stefaan Decoutere, Guido Groeseneken
2005	J	`jnl`	On the data interpretation of the C-AFM measurements in the characterization of thin insulating layers. Microelectron. Reliab. J. Pétry, Wilfried Vandervorst, Luigi Pantisano, Robin Degraeve
2005	J	`jnl`	Progressive breakdown in ultrathin SiON dielectrics and its effect on transistor performance. Microelectron. Reliab. Robert O'Connor, Greg Hughes, Robin Degraeve, Ben Kaczer
2003	J	`jnl`	A new method for the analysis of high-resolution SILC data. Microelectron. Reliab. Stefano Aresu, Ward De Ceuninck, G. Knuyt, J. Mertens, Jean Manca, Luc De Schepper, Robin Degraeve, Ben Kaczer, Marc D'Olieslaeger, Jan D'Haen
2002	J	`jnl`	Analysis and modeling of a digital CMOS circuit operation and reliability after gate oxide breakdown: a case study. Microelectron. Reliab. Ben Kaczer, Robin Degraeve, Mahmoud Rasras, An De Keersgieter, K. Van de Mieroop, Guido Groeseneken
2002	J	`jnl`	High-resolution SILC measurements of thin SiO Microelectron. Reliab. Stefano Aresu, Ward De Ceuninck, R. Dreesen, Kris Croes, E. Andries, Jean Manca, Luc De Schepper, Robin Degraeve, Ben Kaczer, Marc D'Olieslaeger
1999	J	`jnl`	Cost-effective cleaning and high-quality thin gate oxides. IBM J. Res. Dev. Marc M. Heyns, Twan Bearda, Ingrid Cornelissen, Stefan De Gendt, Robin Degraeve, Guido Groeseneken, Conny Kenens, D. Martin Knotter, Lee M. Loewenstein, Paul W. Mertens, Sofie Mertens, Marc Meuris, Tanya Nigam, Marc Schaekers, Ivo Teerlinck, Wilfried Vandervorst, Rita Vos, Klaus Wolke