Richard G. Southwick

12 papers Unranked 12
YearRankTypeTitle / Venue / Authors
2025 — conf
A Systematic Study of Temperature, Polarity, Thickness, and Ramp Rate Dependencies of Ramp-Voltage Stress for SiO2 and its Comparison with 2D Gate Dielectrics.
IRPS
Ernest Y. Wu, Richard G. Southwick, Baozhen Li
2021 — conf
Analysis of Sheet Dimension (W, L) Dependence of NBTI in GAA-SNS FETs.
IRPS
Nilotpal Choudhury, Tarun Samadder, Ravi Tiwari, Huimei Zhou, Richard G. Southwick, Miaomiao Wang, Souvik Mahapatra
2021 — conf
TDDB Reliability in Gate-All-Around Nanosheet.
IRPS
Huimei Zhou, Miaomiao Wang, Ruqiang Bao, Tian Shen, Ernest Y. Wu, Richard G. Southwick, Jingyun Zhang, Veeraraghavan S. Basker, Dechao Guo
2020 — conf
Analysis of BTI, SHE Induced BTI and HCD Under Full VG/VD Space in GAA Nano-Sheet N and P FETs.
IRPS
Nilotpal Choudhury, Uma Sharma, Huimei Zhou, Richard G. Southwick, Miaomiao Wang, Souvik Mahapatra
2020 — conf
NBTI Impact of Surface Orientation in Stacked Gate-All-Around Nanosheet Transistor.
IRPS
Huimei Zhou, Miaomiao Wang, Jingyun Zhang, Koji Watanabe, Curtis Durfee, Shogo Mochizuki, Ruqiang Bao, Richard G. Southwick, Maruf Bhuiyan, Basker Veeraraghavan
2019 — conf
Bias Temperature Instability Reliability in Stacked Gate-All-Around Nanosheet Transistor.
IRPS
Miaomiao Wang, Jingyun Zhang, Huimei Zhou, Richard G. Southwick, Robin Hsin Kuo Chao, Xin Miao, Veeraraghavan S. Basker, Tenko Yamashita, Dechao Guo, Gauri Karve, Huiming Bu, James H. Stathis
2019 — conf
On the Frequency Dependence of Bulk Trap Generation During AC Stress in Si and SiGe RMG P-FinFETs.
IRPS
Narendra Parihar, Uma Sharma, Richard G. Southwick, Miaomiao Wang, James H. Stathis, Souvik Mahapatra
2019 — conf
Time Dependent Dielectric Breakdown of Cobalt and Ruthenium Interconnects at 36nm Pitch.
IRPS
H. Huang, P. S. McLaughin, James J. Kelly, C.-C. Yang, Richard G. Southwick, M. Wang, Griselda Bonilla, Gauri Karve
2018 — conf
Lateral profiling of HCI induced damage in ultra-scaled FinFET devices with Id-Vd characteristics.
IRPS
Miaomiao Wang, Richard G. Southwick, Kangguo Cheng, James H. Stathis
2017 — conf
Hot carrier reliability in ultra-scaled sige channel p-FinFETs.
ASICON
Miaomiao Wang, Xin Miao, James H. Stathis, Richard G. Southwick
2017 — conf
Interface engineering of Si1-xGex gate stacks for high performance dual channel CMOS.
ASICON
Choonghyun Lee, Richard G. Southwick, Shogo Mochizuki, Paul Jamison, Ruqiang Bao, Rajan Kumar Pandey, Aniruddha Konar, Takashi Ando, Vijay Narayanan, Bala Haran, Hemanth Jagannathan
2015 — conf
NBTI in Si0.5Ge0.5 RMG gate stacks - Effect of high-k nitridation.
IRPS
P. Srinivasan, J. Fronheiser, S. Siddiqui, A. Kerber, L. F. Edge, Richard G. Southwick, Eduard Cartier