Razali Ismail

13 papers Journal 8Unranked 5
YearRankTypeTitle / Venue / Authors
2014 J jnl
Analytical model for threshold voltage of double gate bilayer graphene field effect transistors.
Microelectron. Reliab.
Mehdi Saeidmanesh, Meisam Rahmani, H. Karimi Feiz Karimi, M. Khaledian, Razali Ismail
2013 — conf
Simulation of Trigate FET with Semi-Cylindrical Channel to Reduce Corner Effect.
UKSim
Fatimah Hamid, Razali Ismail
2010 J jnl
Analytical modeling of high performance single-walled carbon nanotube field-effect-transistor.
Microelectron. J.
Desmond Chang Yih Chek, Michael L. P. Tan, Mohammad Taghi Ahmadi, Razali Ismail, Vijay K. Arora
2010 J jnl
Investigation of pillar thickness variation effect on oblique rotating implantation (ORI)-based vertical double gate MOSFET.
Microelectron. J.
Munawar Agus Riyadi, Ismail Saad, Razali Ismail
2009 J jnl
Ballistic mobility and saturation velocity in low-dimensional nanostructures.
Microelectron. J.
Ismail Saad, Michael L. P. Tan, Ing Hui Hii, Razali Ismail, Vijay K. Arora
2009 J jnl
Current-voltage characteristics of a silicon nanowire transistor.
Microelectron. J.
Mohammad Taghi Ahmadi, Hui Houg Lau, Razali Ismail, Vijay K. Arora
2009 — conf
Extraction of SPICE Model for Double Gate Vertical MOSFET.
Asia International Conference on Modelling and Simulation
Jatmiko E. Suseno, Muhammad Taghi Ahmad, Munawar Agus Riyadi, Razali Ismail
2009 — conf
Physics-Based Modelling of Ballistic Transport in Nanoscale Transistor.
Asia International Conference on Modelling and Simulation
Ismail Saad, Razak M. A. Lee, Razali Ismail, Vijay K. Arora
2009 — conf
Physics-Based Simulation of Carrier Velocity in 2-Dimensional P-Type MOSFET.
Asia International Conference on Modelling and Simulation
Munawar Agus Riyadi, Mohammad Taghi Ahmadi, Jatmiko E. Suseno, Kang Eng Siew, Ismail Saad, Razali Ismail, Vijay K. Arora
2009 J jnl
Scattering-limited and ballistic transport in a nano-CMOS circuit.
Microelectron. J.
Ismail Saad, Michael L. P. Tan, Aaron C. E. Lee, Razali Ismail, Vijay K. Arora
2008 J jnl
Self-aligned vertical double-gate MOSFET (VDGM) with the oblique rotating ion implantation (ORI) method.
Microelectron. J.
Ismail Saad, Razali Ismail
2008 — conf
The Ultimate Drift Velocity in Two Dimensional Quantum Limit.
Asia International Conference on Modelling and Simulation
Mohammad Taghi Ahmadi, Ismail Saad, Razali Ismail, Vijay K. Arora
1990 J jnl
Adaptive meshing schemes for simulating dopant diffusion.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Razali Ismail, Gehan A. J. Amaratunga