R. S. Gupta

35 papers Journal 32Unranked 3
YearRankTypeTitle / Venue / Authors
2025 J jnl
Analytical modeling of cylindrical Silicon-on-Insulator Schottky Barrier MOSFET and impact of insulator pillar radius on analog/RF and linearity parameters for low power circuit application.
Microelectron. J.
Jitender Kumar, Amit Saxena, S. S. Deswal, Aparna N. Mahajan, R. S. Gupta
2023 J jnl
Analytical modelling, simulation, and characterization of temperature-dependent GaN-HK-SBNWFET for high-frequency application.
Microelectron. J.
Swati Sharma, Vandana Nath, S. S. Deswal, R. S. Gupta
2023 J jnl
Ge/Si interfaced label free nanowire BIOFET for biomolecules detection - analytical analysis.
Microelectron. J.
Amit Das, Sonam Rewari, Binod Kumar Kanaujia, S. S. Deswal, R. S. Gupta
2023 J jnl
Modeling of Dual- Metal Junctionless Accumulation-Mode cylindrical surrounding gate (DM-JAM-CSG) MOSFET for cryogenic temperature applications.
Microelectron. J.
Sumedha Gupta, Neeta Pandey, R. S. Gupta
2023 J jnl
Nanoscale Temperature Dependent Quantum-Effect Analytical Model of Short- Channel, Junction-Less, Double-Gate Stack (SC-JL-DG) MOSFET for Analog Applications at Higher Frequencies.
Microelectron. J.
Prajvi Udar, Anubha Goel, R. S. Gupta
2023 J jnl
Potential and electric field analysis of field plated AlGaN/GaN HEMT for high voltage applications using 2-D analytical approach.
Microelectron. J.
Nisha Chugh, Subhasis Haldar, Monika Bhattacharya, R. S. Gupta
2023 J jnl
Quantum Effect Dependent Modelling of Short Channel Junctionless Double Gate Stack(SC-JL-DG) MOSFET for High Frequency Analog Applications.
Microelectron. J.
Prajvi Udar, Anubha Goel, R. S. Gupta
2022 J jnl
Analytical modelling and sensitivity analysis of Gallium Nitride-Gate Material and, dielectric engineered- Schottky nano-wire fet(GaN-GME-DE-SNW-fet) based label-free biosensor.
Microelectron. J.
Swati Sharma, Vandana Nath, S. S. Deswal, R. S. Gupta
2018 — conf
Simulating Optical Behavior of Nano Dimensional InAlAs/InGaAs HEMT for IoT Applications.
UKSim
Pritam Sharma, Neetika Sharma, R. S. Gupta, Jyotika Jogi
2015 — conf
Performance investigation and linearity analysis of new cylindrical MOSFET for wireless applications.
ICM
Jay Hind K. Verma, Mridula Gupta, Subhasis Haldar, R. S. Gupta
2014 J jnl
An analytical subthreshold current modeling of cylindrical gate all around (CGAA) MOSFET incorporating the influence of device design engineering.
Microelectron. J.
Yogesh Pratap, Pujarini Ghosh, Subhasis Haldar, R. S. Gupta, Mridula Gupta
2014 J jnl
Impact of gate material engineering(GME) on analog/RF performance of nanowire Schottky-barrier gate all around (GAA) MOSFET for low power wireless applications: 3D T-CAD simulation.
Microelectron. J.
Manoj Kumar, Subhasis Haldar, Mridula Gupta, R. S. Gupta
2014 J jnl
Temperature dependent subthreshold model of long channel GAA MOSFET including localized charges to study variations in its temperature sensitivity.
Microelectron. Reliab.
Rajni Gautam, Manoj Saxena, R. S. Gupta, Mridula Gupta
2013 J jnl
Drain current model for a gate all around (GAA) p-n-p-n tunnel FET.
Microelectron. J.
Rakhi Narang, Manoj Saxena, R. S. Gupta, Mridula Gupta
2013 J jnl
Numerical analysis of localised charges impact on static and dynamic performance of nanoscale cylindrical surrounding gate MOSFET based CMOS inverter.
Microelectron. Reliab.
Rajni Gautam, Manoj Saxena, R. S. Gupta, Mridula Gupta
2012 J jnl
AC analysis of nanoscale GME-TRC MOSFET for microwave and RF applications.
Microelectron. Reliab.
Priyanka Malik, R. S. Gupta, Rishu Chaujar, Mridula Gupta
2012 J jnl
An analytical drain current model for dual material engineered cylindrical/surrounded gate MOSFET.
Microelectron. J.
Pujarini Ghosh, Subhasis Haldar, R. S. Gupta, Mridula Gupta
2012 J jnl
Effect of localised charges on nanoscale cylindrical surrounding gate MOSFET: Analog performance and linearity analysis.
Microelectron. Reliab.
Rajni Gautam, Manoj Saxena, R. S. Gupta, Mridula Gupta
2012 J jnl
Immunity against temperature variability and bias point invariability in double gate tunnel field effect transistor.
Microelectron. Reliab.
Rakhi Narang, Manoj Saxena, R. S. Gupta, Mridula Gupta
2012 — conf
Simulation of Enhanced Gate Control in a Double Gate Quantum Domain InAlAs/InGaAs/InP HEMT.
UKSim
Neha Verma, Jyotika Jogi, Mridula Gupta, R. S. Gupta
2012 J jnl
Simulation study of Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for high temperature applications.
Microelectron. Reliab.
Vandana Kumari, Manoj Saxena, R. S. Gupta, Mridula Gupta
2012 J jnl
Temperature dependent drain current model for Gate Stack Insulated Shallow Extension Silicon On Nothing (ISESON) MOSFET for wide operating temperature range.
Microelectron. Reliab.
Vandana Kumari, Manoj Saxena, R. S. Gupta, Mridula Gupta
2011 J jnl
Device linearity and intermodulation distortion comparison of dual material gate and conventional AlGaN/GaN high electron mobility transistor.
Microelectron. Reliab.
Sona P. Kumar, Anju Agrawal, Rishu Chaujar, R. S. Gupta, Mridula Gupta
2009 J jnl
Dynamic performance of graded channel DG FD SOI n-MOSFETs for minimizing the gate misalignment effect.
Microelectron. Reliab.
Rupendra Kumar Sharma, Ritesh Gupta, Mridula Gupta, R. S. Gupta
2009 J jnl
Mathematical modelling of pulsatile flow of Casson's fluid in arterial stenosis.
Appl. Math. Comput.
S. U. Siddiqui, N. K. Verma, Shailesh Mishra, R. S. Gupta
2009 J jnl
Modeling of hetero-interface potential and threshold voltage for tied and separate nanoscale InAlAs-InGaAs symmetric double-gate HEMT.
Microelectron. Reliab.
Servin Rathi, Jyotika Jogi, Mridula Gupta, R. S. Gupta
2008 J jnl
Performance assessment and sub-threshold analysis of gate material engineered AlGaN/GaN HEMT for enhanced carrier transport efficiency.
Microelectron. J.
Sona P. Kumar, Anju Agrawal, Rishu Chaujar, Mridula Gupta, R. S. Gupta
2007 J jnl
A compact C-V model for 120nm AlGaN/GaN HEMT with modified field dependent mobility for high frequency applications.
Microelectron. J.
Parvesh Gangwani, Sujata Pandey, Subhasis Haldar, Mridula Gupta, R. S. Gupta
2007 J jnl
An analytical drain current model for graded channel cylindrical/surrounding gate MOSFET.
Microelectron. J.
Harsupreet Kaur, Sneha Kabra, Subhasis Haldar, R. S. Gupta
2007 J jnl
Threshold voltage model for small geometry AlGaN/GaN HEMTs based on analytical solution of 3-D Poisson's equation.
Microelectron. J.
Sona P. Kumar, Anju Agrawal, Rishu Chaujar, Sneha Kabra, Mridula Gupta, R. S. Gupta
2007 J jnl
Two-dimensional subthreshold analysis of sub-micron GaN MESFET.
Microelectron. J.
Sneha Kabra, Harsupreet Kaur, Subhasis Haldar, Mridula Gupta, R. S. Gupta
2006 J jnl
A semi empirical approach for submicron GaN MESFET using an accurate velocity field relationship for high power applications.
Microelectron. J.
Sneha Kabra, Harsupreet Kaur, Ritesh Gupta, Subhasis Haldar, Mridula Gupta, R. S. Gupta
2006 J jnl
An analysis for AlGaN/GaN modulation doped field effect transistor using accurate velocity-field dependence for high power microwave frequency applications.
Microelectron. J.
Sona P. Kumar, Anju Agrawal, Sneha Kabra, Mridula Gupta, R. S. Gupta
2006 J jnl
An analytical model for discretized doped InAlAs/InGaAs heterojunction HEMT for higher cut-off frequency and reliability.
Microelectron. J.
Ritesh Gupta, Sandeep k. Aggarwal, Mridula Gupta, R. S. Gupta
2003 J jnl
Extraction technique for characterization of electric field distribution and drain current in VDMOS power transistor.
Microelectron. J.
N. Kaushik, A. Kranti, Mridula Gupta, R. S. Gupta