Quincy Li

13 papers Journal 5Unranked 8
YearRankTypeTitle / Venue / Authors
2025 J jnl
3.7-GHz Multi-Bank High-Current Single-Port Cache SRAM With Leakage Saving Circuits in 3-nm FinFET for HPC Applications.
IEEE J. Solid State Circuits
Yoshiaki Osada, Takaaki Nakazato, Yumito Aoyagi, Koji Nii, Jhon-Jhy Liaw, Shien-Yang Wu, Quincy Li, Hidehiro Fujiwara, Hung-Jen Liao, Tsung-Yung Jonathan Chang
2025 — conf
A 38.1Mb/mm
ISSCC
Tsung-Yung Jonathan Chang, Yen-Huei Chen, K. Venkateswara Reddy, Nikhil Puri, Teja Masina, Kuo-Cheng Lin, Po-Sheng Wang, Yangsyu Lin, Chih-Yu Lin, Yi-Hsin Nien, Hidehiro Fujiwara, Ku-Feng Lin, Ming-Hung Chang, Ching-Wei Wu, Robin Lee, Yih Wang, Hung-Jen Liao, Quincy Li, Ping-Wei Wang, Geoffrey Yeap
2023 — conf
3.7-GHz Multi-Bank High-Current Single-Port Cache SRAM with 0.5V-1.4V Wide Voltage Range Operation in 3nm FinFET for HPC Applications.
VLSI Technology and Circuits
Yoshiaki Osada, Takaaki Nakazato, Koji Nii, Jhon-Jhy Liaw, Shien-Yang Michael Wu, Quincy Li, Hidehiro Fujiwara, Hung-Jen Liao, Tsung-Yung Jonathan Chang
2023 — conf
A 3nm 256Mb SRAM in FinFET Technology with New Array Banking Architecture and Write-Assist Circuitry Scheme for High-Density and Low-VMIN Applications.
VLSI Technology and Circuits
Jonathan Chang, Yen-Huei Chen, Gary Chan, Kuo-Cheng Lin, Po-Sheng Wang, Yangsyu Lin, Sevic Chen, Peijiun Lin, Ching-Wei Wu, Chih-Yu Lin, Yi-Hsin Nien, Hidehiro Fujiwara, Atul Katoch, Robin Lee, Hung-Jen Liao, Jhon-Jhy Liaw, Shien-Yang Michael Wu, Quincy Li
2023 — conf
A 4.24GHz 128X256 SRAM Operating Double Pump Read Write Same Cycle in 5nm Technology.
VLSI Technology and Circuits
Nick Zhang, Young Suk Kim, Peter Hsu, Samsoo Kim, Derek Tao, Hung-Jen Liao, Ping-Wei Wang, Geoffrey Yeap, Quincy Li, Tsung-Yung Jonathan Chang
2021 J jnl
A 5-nm 135-Mb SRAM in EUV and High-Mobility Channel FinFET Technology With Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-V
IEEE J. Solid State Circuits
Tsung-Yung Jonathan Chang, Yen-Huei Chen, Wei-Min Chan, Hank Cheng, Po-Sheng Wang, Yangsyu Lin, Hidehiro Fujiwara, Robin Lee, Hung-Jen Liao, Ping-Wei Wang, Geoffrey Yeap, Quincy Li
2020 — conf
15.1 A 5nm 135Mb SRAM in EUV and High-Mobility-Channel FinFET Technology with Metal Coupling and Charge-Sharing Write-Assist Circuitry Schemes for High-Density and Low-VMIN Applications.
ISSCC
Jonathan Chang, Yen-Huei Chen, Gary Chan, Hank Cheng, Po-Sheng Wang, Yangsyu Lin, Hidehiro Fujiwara, Robin Lee, Hung-Jen Liao, Ping-Wei Wang, Geoffrey Yeap, Quincy Li
2017 — conf
12.1 A 7nm 256Mb SRAM in high-k metal-gate FinFET technology with write-assist circuitry for low-VMIN applications.
ISSCC
Jonathan Chang, Yen-Huei Chen, Wei-Min Chan, Sahil Preet Singh, Hank Cheng, Hidehiro Fujiwara, Jih-Yu Lin, Kao-Cheng Lin, John Hung, Robin Lee, Hung-Jen Liao, Jhon-Jhy Liaw, Quincy Li, Chih-Yung Lin, Mu-Chi Chiang, Shien-Yang Wu
2015 J jnl
A 16 nm 128 Mb SRAM in High-κ Metal-Gate FinFET Technology With Write-Assist Circuitry for Low-VMIN Applications.
IEEE J. Solid State Circuits
Yen-Huei Chen, Wei-Min Chan, Wei-Cheng Wu, Hung-Jen Liao, Kuo-Hua Pan, Jhon-Jhy Liaw, Tang-Hsuan Chung, Quincy Li, Chih-Yung Lin, Mu-Chi Chiang, Shien-Yang Wu, Jonathan Chang
2014 — conf
13.5 A 16nm 128Mb SRAM in high-κ metal-gate FinFET technology with write-assist circuitry for low-VMIN applications.
ISSCC
Yen-Huei Chen, Wei-Min Chan, Wei-Cheng Wu, Hung-Jen Liao, Kuo-Hua Pan, Jhon-Jhy Liaw, Tang-Hsuan Chung, Quincy Li, George H. Chang, Chih-Yung Lin, Mu-Chi Chiang, Shien-Yang Wu, Sreedhar Natarajan, Jonathan Chang
2013 — conf
A 20nm 112Mb SRAM in High-к metal-gate with assist circuitry for low-leakage and low-VMIN applications.
ISSCC
Jonathan Chang, Yen-Huei Chen, Hank Cheng, Wei-Min Chan, Hung-Jen Liao, Quincy Li, Stanley Chang, Sreedhar Natarajan, Robin Lee, Ping-Wei Wang, Shyue-Shyh Lin, Chung-Cheng Wu, Kuan-Lun Cheng, Min Cao, George H. Chang
2012 J jnl
A 45-nm Dual-Port SRAM Utilizing Write-Assist Cells Against Simultaneous Access Disturbances.
IEEE Trans. Circuits Syst. II Express Briefs
Jui-Jen Wu, Meng-Fan Chang, Shau-Wei Lu, Robert Lo, Quincy Li
2012 J jnl
Compact Measurement Schemes for Bit-Line Swing, Sense Amplifier Offset Voltage, and Word-Line Pulse Width to Characterize Sensing Tolerance Margin in a 40 nm Fully Functional Embedded SRAM.
IEEE J. Solid State Circuits
Yen-Huei Chen, Shao-Yu Chou, Quincy Li, Wei-Min Chan, Dar Sun, Hung-Jen Liao, Ping Wang, Meng-Fan Chang, Hiroyuki Yamauchi