Quentin Smets

11 papers Unranked 11
YearRankTypeTitle / Venue / Authors
2024 — conf
EOT Scaling Via 300mm MX2 Dry Transfer - Steps Toward a Manufacturable Process Development and Device Integration.
VLSI Technology and Circuits
S. Ghosh, A. Kruv, Quentin Smets, Tom Schram, D. J. Leech, T. Ding, V. Turkani, Benjamin Groven, A. Dangel, G. Probst, Thomas Uhrmann, Markus Wimplinger, Inge Asselberghs, Cesar J. Lockhart de la Rosa, Steven Brems, Gouri Sankar Kar
2023 — conf
Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs.
IRPS
L. Panarella, Ben Kaczer, Quentin Smets, Devin Verreck, Tom Schram, Daire Cott, Dennis Lin, Stanislav Tyaginov, Inge Asselberghs, Cesar J. Lockhart de la Rosa, Gouri Sankar Kar, Valeri Afanas'ev
2023 — conf
Integration of epitaxial monolayer MX₂ channels on 300mm wafers via Collective-Die-To-Wafer (CoD2W) transfer.
VLSI Technology and Circuits
Souvik Ghosh, Quentin Smets, S. Banerjee, Tom Schram, Koen Kennes, R. Verheyen, P. Kumar, M.-E. Boulon, Benjamin Groven, H. M. Silva, Shreya Kundu, Daire Cott, Dennis Lin, P. Favia, T. Nuytten, A. Phommahaxay, Inge Asselberghs, C. De La Rosa, Gouri Sankar Kar, Steven Brems
2023 — conf
The Promise of 2-D Materials for Scaled Digital and Analog Applications.
ISSCC
Devin Verreck, Piet Wambacq, Maarten Van De Put, Zubair Ahmed, Quentin Smets, Aryan Afzalian, Rutger Duflou, Xiangyu Wu, Gioele Mirabelli, Rongmei Chen, Inge Asselberghs, Gouri Sankar Kar
2023 — conf
Towards low damage and fab-compatible top-contacts in MX2 transistors using a combined synchronous pulse atomic layer etch and wet-chemical etch approach.
VLSI Technology and Circuits
Shreya Kundu, D. H. van Doip, Tom Schram, Quentin Smets, S. Banerjee, Benjamin Groven, Daire Cott, Stefan Decoster, P. Bezard, F. Lazzarino, K. Banerjee, Souvik Ghosh, J. F. de Mamelfe, Pierre Morin, Cesar J. Lockhart de la Rosa, Inge Asselberghs, Gouri Sankar Kar
2022 — conf
Analysis of BTI in 300 mm integrated dual-gate WS2 FETs.
DRC
L. Panarella, Quentin Smets, Devin Verreck, Tom Schram, Daire Cott, Inge Asselberghs, Ben Kaczer
2019 — conf
Experimental calibration of the temperature dependence of the heterojunction bandgap in III-V tunneling devices.
DRC
Jasper Bizindavyi, Anne S. Verhulst, Quentin Smets, Bart Sorée, Guido Groeseneken
2019 — conf
Tunnel FETs using Phosphorene/ReS2 heterostructures.
DRC
Yashwanth Balaji, Quentin Smets, Dennis Lin, Inge Asselberghs, Iuliana P. Radu, Guido Groeseneken
2017 — conf
Tunneling transistors based on MoS2/MoTe2 Van der Waals heterostructures.
ESSDERC
Yashwanth Balaji, Quentin Smets, Cesar J. Lockhart de la Rosa, Anh Khoa Augustin Lu, Daniele Chiappe, Tarun Agarwal, Dennis Lin, Cedric Huyghebaert, Iuliana P. Radu, Dan Mocuta, Guido Groeseneken
2017 — conf
WS2 transistors on 300 mm wafers with BEOL compatibility.
ESSDERC
Tom Schram, Quentin Smets, Benjamin Groven, M. H. Heyne, E. Kunnen, A. Thiam, Katia Devriendt, Annelies Delabie, Dennis Lin, M. Lux, Daniele Chiappe, Inge Asselberghs, S. Brus, Cedric Huyghebaert, S. Sayan, A. Juncker, Matty Caymax, Iuliana P. Radu
2016 — conf
Beyond-Si materials and devices for more Moore and more than Moore applications.
ICICDT
Nadine Collaert, AliReza Alian, Hiroaki Arimura, Geert Boccardi, Geert Eneman, Jacopo Franco, Tsvetan Ivanov, Dennis Lin, Jérôme Mitard, S. Ramesh, R. Rooyackers, Marc Schaekers, A. Sibaya-Hernandez, S. Sioncke, Quentin Smets, Abhitosh Vais, A. Vandooren, Anabela Veloso, Anne S. Verhulst, Devin Verreck, Niamh Waldron, Amey Walke, Liesbeth Witters, H. Yu, X. Zhou, Aaron Voon-Yew Thean