Qing-Tai Zhao

14 papers A 1C 1Unranked 12
YearRankTypeTitle / Venue / Authors
2023 — conf
Comparison between WKB and Wavelet Approach for Analytical Calculation of Tunneling Currents in Schottky Barrier Field-Effect Transistors.
MIXDES
Alexander Kloes, Mike Schwarz, Yi Han, Qing-Tai Zhao, Christian Römer
2023 — conf
High Performance 5 nm Si Nanowire FETs with a Record Small SS = 2.3 mV/dec and High Transconductance at 5.5 K Enabled by Dopant Segregated Silicide Source/Drain.
VLSI Technology and Circuits
Yi Han, Jingxuan Sun, Jin Hee Bae, Detlev Grützmacher, Joachim Knoch, Qing-Tai Zhao
2022 C conf
Experimental and Theoretical Analysis of Stateful Logic in Passive and Active Crossbar Arrays for Computation-in-Memory.
ISCAS
Christopher Bengel, Stefan Wiefels, Vikas Rana, Hsin-Yu Chen, Qing-Tai Zhao, Rainer Waser, Henriette Padberg, Fengben Xi, Stephan Menzel
2022 — conf
Ferroelectric Schottky Barrier MOSFET as Analog Synapses for Neuromorphic Computing.
ESSCIRC
Fengben Xi, Andreas Grenmy, Jiayuan Zhang, Yi Han, Jin Hee Bae, Detlev Grützmacher, Qing-Tai Zhao
2022 — conf
GeSn Vertical Gate-all-around Nanowire n-type MOSFETs.
ESSDERC
Yannik Junk, Marvin Frauenrath, Yi Han, Omar Concepción Diaz, Jin-Hee Bae, Jean-Michel Hartmann, Detlev Grützmacher, Dan Buca, Qing-Tai Zhao
2022 A conf
NEUROTEC I: Neuro-inspired Artificial Intelligence Technologies for the Electronics of the Future.
DATE
Melvin Galicia, Stephan Menzel, Farhad Merchant, Maximilian Müller, Hsin-Yu Chen, Qing-Tai Zhao, Felix Cüppers, Abdur R. Jalil, Qi Shu, Peter Schüffelgen, Gregor Mussler, Carsten Funck, Christian Lanius, Stefan Wiefels, Moritz von Witzleben, Christopher Bengel, Nils Kopperberg, Tobias Ziegler, R. Walied Ahmad, Alexander Krüger, Letícia Maria Bolzani Pöhls, Regina Dittmann, Susanne Hoffmann-Eifert, Vikas Rana, Detlev Grützmacher, Matthias Wuttig, Dirk J. Wouters, Andrei Vescan, Tobias Gemmeke, Joachim Knoch, Max Christian Lemme, Rainer Leupers, Rainer Waser
2021 — conf
4-Terminal Ferroelectric Schottky Barrier Field Effect Transistors as Artificial Synapses.
ESSDERC
Fengben Xi, Yi Han, Andreas T. Tiedemann, Detlev Grützmacher, Qing-Tai Zhao
2017 — conf
Experimental characterization of the static noise margins of strained silicon complementary tunnel-FET SRAM.
ESSDERC
Gia Vinh Luong, Sebastiano Strangio, Andreas T. Tiedemann, Patric Bernardy, Stefan Trellenkamp, Pierpaolo Palestri, Siegfried Mantl, Qing-Tai Zhao
2017 — conf
Ultrathin lateral unidirectional bipolar-type insulated-gate transistor as pH sensor.
ESSDERC
Qinghua Han, Anran Gao, Keyvan Narimani, Yuelin Wang, Tie Li, Siegfried Mantl, Qing-Tai Zhao
2016 — conf
Implementation of a DC compact model for double-gate Tunnel-FET based on 2D calculations and application in circuit simulation.
ESSDERC
Fabian Horst, Michael Graef, Fabian Hosenfeld, Atieh Farokhnejad, Franziska Hain, Gia Vinh Luong, Qing-Tai Zhao, Benjamín Iñíguez, Alexander Kloes
2016 — conf
Si n-TFETs on ultra thin body with suppressed ambipolarity.
ESSDERC
Chang Liu, Qinghua Han, Gia Vinh Luong, Keyvan Narimani, Stefan Glass, Andreas T. Tiedemann, Stefan Trellenkamp, Wenjie Yu, Xi Wang, Siegfried Mantl, Qing-Tai Zhao
2014 — conf
Experimental demonstration of improved analog device performance in GAA-NW-TFETs.
ESSDERC
Christian Schulte-Braucks, Simon Richter, Lars Knoll, Luca Selmi, Qing-Tai Zhao, Siegfried Mantl
2013 — conf
Low frequency noise in strained silicon nanowire array MOSFETs and Tunnel-FETs.
ESSDERC
Simon Richter, Svetlana A. Vitusevich, Sergii Pud, Jing Li, Lars Knoll, Stefan Trellenkamp, Anna Schäfer, Steffi Lenk, Qing-Tai Zhao, Andreas Offenhäusser, Siegfried Mantl, Konstantin K. Bourdelle
2012 — conf
Si tunneling transistors with high on-currents and slopes of 50 mV/dec using segregation doped Nisi2 tunnel junctions.
ESSDERC
Lars Knoll, Qing-Tai Zhao, Stefan Trellenkamp, Anna Schäfer, K. K. Bourdelle, Siegfried Mantl