Pui-To Lai

16 papers Journal 14Unranked 2
YearRankTypeTitle / Venue / Authors
2016 J jnl
Nb-doped Ga
Microelectron. Reliab.
R. P. Shi, X. D. Huang, Johnny K. O. Sin, Pui-To Lai
2014 J jnl
Charge-trapping characteristics of BaTiO
Microelectron. Reliab.
X. D. Huang, R. P. Shi, C. H. Leung, Pui-To Lai
2013 — conf
A comparison study on hydrogen sensing performance of Pt/MoO3 nanoplatelets coated with a thin layer of Ta2O5 or La2O3.
NEMS
Jerry Yu, Y. Liu, F. X. Cai, Mahnaz Shafiei, Gang Chen, Nunzio Motta, Wojtek Wlodarski, Kourosh Kalantar-Zadeh, Pui-To Lai
2012 J jnl
A study on MIS Schottky diode based hydrogen sensor using La
Microelectron. Reliab.
Gang Chen, Jerry Yu, Pui-To Lai
2012 J jnl
Performance of nonvolatile memory by using band-engineered SrTiO
Microelectron. Reliab.
X. D. Huang, Pui-To Lai, Johnny K. O. Sin
2010 J jnl
A carrier-mobility model for high-k gate-dielectric Ge MOSFETs with metal gate electrode.
Microelectron. Reliab.
Jing-Ping Xu, X. Xiao, Pui-To Lai
2008 J jnl
A 2D threshold-voltage model for small MOSFET with quantum-mechanical effects.
Microelectron. Reliab.
Jing-Ping Xu, Y. P. Li, Pui-To Lai, W. B. Chen, S. G. Xu, J. G. Guan
2008 J jnl
A fringing-capacitance model for deep-submicron MOSFET with high-k gate dielectric.
Microelectron. Reliab.
F. Ji, Jing-Ping Xu, Pui-To Lai, J. G. Guan
2008 — conf
Effects of Insulator Thickness on the Sensing Properties of MISiC Schottky-Diode Hydrogen Sensor.
DELTA
Wing-Man Tang, Cheung H. Leung, Pui-To Lai
2008 J jnl
Effects of Ti content and wet-N
Microelectron. Reliab.
C. X. Li, X. Zou, Pui-To Lai, Jing-Ping Xu, C. L. Chan
2008 J jnl
Improved sensing characteristics of MISiC Schottky-diode hydrogen sensor by using HfO
Microelectron. Reliab.
Wing-Man Tang, Cheung H. Leung, Pui-To Lai
2008 J jnl
Influence of sidewall spacer on threshold voltage of MOSFET with high-k gate dielectric.
Microelectron. Reliab.
Jing-Ping Xu, F. Ji, Pui-To Lai, J. G. Guan
2007 J jnl
A threshold-voltage model of SiGe-channel pMOSFET without Si cap layer.
Microelectron. Reliab.
X. Zou, Jing-Ping Xu, C. X. Li, Pui-To Lai, W. B. Chen
2007 J jnl
Gate leakage properties of MOS devices with tri-layer high-k gate dielectric.
Microelectron. Reliab.
W. B. Chen, Jing-Ping Xu, Pui-To Lai, Y. P. Li, S. G. Xu
2004 J jnl
Interfacial properties and reliability of SiO
Microelectron. Reliab.
Pui-To Lai, Jing-Ping Xu, H. P. Wu, C. L. Chan
2003 J jnl
Enhanced reliability for low-temperature gate dielectric of MOS devices by N
Microelectron. Reliab.
David C. T. Or, Pui-To Lai, Johnny K. O. Sin, Paul C. K. Kwok, Jing-Ping Xu