Pramod Kumar Tiwari

14 papers C 2Journal 7Unranked 5
YearRankTypeTitle / Venue / Authors
2025 J jnl
Si/SiGe superlattice-based double gate feedback field-effect transistor and its application in 1T-DRAM.
Microelectron. J.
Subir Das, Ashraf Maniyar, Pushp Raj, Jawar Singh, Pramod Kumar Tiwari
2024 J jnl
Logic-in-memory application of silicon nanotube-based FBFET with core-source architecture.
Microelectron. J.
Sai Shirov Katta, Tripty Kumari, P. S. T. N. Srinivas, Pramod Kumar Tiwari
2023 J jnl
Design and performance assessment of a vertical feedback FET.
Microelectron. J.
Sai Shirov Katta, Tripty Kumari, Subir Das, Pramod Kumar Tiwari
2023 C conf
Impact of Process-Induced Inclined Sidewalls On Small Signal Parameters of Silicon Nanowire GAA MOSFET.
TENCON
Ashraf Maniyar, P. S. T. N. Srinivas, Pramod Kumar Tiwari
2023 J jnl
Impact of self-heating on thermal noise in In
Microelectron. J.
P. S. T. N. Srinivas, Satyabrata Jit, Pramod Kumar Tiwari
2022 J jnl
Subthreshold model of asymmetric GAA junctionless FETs with scaled equivalent oxide thickness.
Microelectron. J.
Ajit Kumar, Pramod Kumar Tiwari, Jitendra Nath Roy
2021 — conf
Genetic algorithm-based threshold voltage prediction of SOI JLT using multi-variable nonlinear regression.
ISDCS
Sandeep Moparthi, Pramod Kumar Tiwari, Gopi Krishna Saramekala
2019 C conf
Analytical Modeling of Analog/RF Parameters for Trigate Junctionless Field Effect Transistor Incorporating Substrate Biasing Effects.
TENCON
Deepti Gola, Balraj Singh, Pramod Kumar Tiwari
2019 — conf
Analytical Modeling of Subthreshold Current and Subthreshold Swing of Schottky-Barrier Source/Drain Double Gate-All-Around (DGAA) MOSFETs.
iSES
Arun Kumar, P. S. T. N. Srinivas, Pramod Kumar Tiwari
2019 J jnl
Drain current modelling of double gate-all-around (DGAA) MOSFETs.
IET Circuits Devices Syst.
Arun Kumar, Shiv Bhushan, Pramod Kumar Tiwari
2019 — conf
Modeling of Drain Current and Analog Characteristics of Dual-Metal Quadruple Gate (DMQG) MOSFETs.
iSES
Visweswara Rao Samoju, Gopi Krishna Saramekala, Pramod Kumar Tiwari, Ayas Kanta Swain, Kamalakanta Mahapatra
2019 — conf
Temperature Dependence of Subthreshold Characteristics of Negative Capacitance Recessed-Source/Drain (NC R-S/D) SOI MOSFET.
iSES
Sandeep Moparthi, Pramod Kumar Tiwari, Visweswara Rao Samoju, Gopi Krishna Saramekala
2011 — conf
An Analytical Drain Current Model for Short-Channel Triple-Material Double-Gate MOSFETs.
ISVLSI
Harshit Agnihotri, Abhishek Ranjan, Pramod Kumar Tiwari, Satyabrata Jit
2010 J jnl
Modelling of doping-dependent subthreshold swing of symmetric double-gate MOSFETs.
IET Circuits Devices Syst.
Pramod Kumar Tiwari, Chinmay R. Panda, Anupam Agarwal, Pratik Sharma, Satyabrata Jit