Pierre Canet

12 papers C 1Journal 5Unranked 6
YearRankTypeTitle / Venue / Authors
2019 — conf
An Augmented OxRAM Synapse for Spiking Neural Network (SNN) Circuits.
DTIS
Hassen Aziza, Hussein Bazzi, Jérémy Postel-Pellerin, Pierre Canet, Mathieu Moreau, Adnan Harb
2019 — conf
True random number generation exploiting SET voltage variability in resistive RAM memory arrays.
NVMTS
Jérémy Postel-Pellerin, Hussein Bazzi, Hassen Aziza, Pierre Canet, Mathieu Moreau, Vincenzo Della Marca, Adnan Harb
2016 J jnl
Impact of resistive paths on NVM array reliability: Application to Flash & ReRAM memories.
Microelectron. Reliab.
Pierre Canet, Jérémy Postel-Pellerin, Hassen Aziza
2014 J jnl
Impact of endurance degradation on the programming efficiency and the energy consumption of NOR flash memories.
Microelectron. Reliab.
Vincenzo Della Marca, Jérémy Postel-Pellerin, Guillaume Just, Pierre Canet, Jean-Luc Ogier
2013 J jnl
Access resistor modelling for EEPROM's retention test vehicle.
Microelectron. Reliab.
Pierre Canet, Jérémy Postel-Pellerin, Jean-Luc Ogier
2009 J jnl
Extraction of 3D parasitic capacitances in 90 nm and 22 nm NAND flash memories.
Microelectron. Reliab.
Jérémy Postel-Pellerin, Frédéric Lalande, Pierre Canet, Rachid Bouchakour, F. Jeuland, B. Bertello, B. Villard
2009 J jnl
Modeling charge variation during data retention of MLC Flash memories.
Microelectron. Reliab.
Jérémy Postel-Pellerin, Frédéric Lalande, Pierre Canet, Rachid Bouchakour, F. Jeuland, L. Morancho
2008 — conf
Flash Memory Cell Compact Modeling Using PSP Model.
BMAS
Anthony Maure, Pierre Canet, Frédéric Lalande, Bertrand Delsuc, Jean Devin
2002 — conf
Decreasing EEPROM Programming Bias With Negative Voltage, Reliability Impact.
MTDT
Romain Laffont, J. Razafindramora, Pierre Canet, Rachid Bouchakour, Jean-Michel Mirabel
2001 — conf
EEPROM programming study-time and degradation aspects.
ISCAS (4)
Pierre Canet, Rachid Bouchakour, Nadia Harabech, Philippe Boivin, Jean-Michel Mirabel
2001 — conf
Modeling of a floating-gate EEPROM cell using a charge sheet approach including variable tunneling capacitance and polysilicon gate depletion effect.
ISCAS (4)
Rachid Bouchakour, Nadia Harabech, Pierre Canet, Philippe Boivin, Jean Michel Mirable
2000 C conf
Extraction of Fowler-Nordheim parameters of thin SiO
ISCAS
Nadia Harabech, Rachid Bouchakour, Pierre Canet, Philippe Pannier, Jean-Pierre Sorbier