Philippe Godignon

23 papers Journal 16Unranked 7
YearRankTypeTitle / Venue / Authors
2023 — conf
Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical Integration.
MIXDES
Ralph Makhoul, Abdelhakim Bourennane, Luong-Viêt Phung, Frédéric Richardeau, Mihai Lazar, Nour Beydoun, Sergueï Kostcheev, Philippe Godignon, Dominique Planson, Hervé Morel, David Bourrier
2021 J jnl
60-700 K CTAT and PTAT Temperature Sensors with 4H-SiC Schottky Diodes.
Sensors
Razvan Pascu, Gheorghe Pristavu, Gheorghe Brezeanu, Florin Draghici, Philippe Godignon, Cosmin Romanitan, Matei Serbanescu, Adrian Tulbure
2017 J jnl
High-Voltage 4H-SiC Power MOSFETs With Boron-Doped Gate Oxide.
IEEE Trans. Ind. Electron.
Victor Soler, Maria Cabello, Maxime Berthou, Josep Montserrat, José Rebollo, Philippe Godignon, Andrei Mihaila, Maria R. Rogina, Alberto Rodriguez, Javier Sebastián
2016 J jnl
Power cycling analysis method for high-voltage SiC diodes.
Microelectron. Reliab.
Viorel Banu, Victor Soler, Josep Montserrat, José Millán, Philippe Godignon
2015 — conf
Experimental analysis of planar edge terminations for high voltage 4H-SiC devices.
ESSDERC
Victor Soler, Maxime Berthou, Andrei Mihaila, Josep Montserrat, Philippe Godignon, José Rebollo, José Millán
2015 J jnl
Failure analysis of ESD-stressed SiC MESFET.
Microelectron. Reliab.
Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, Patrick Austin
2015 J jnl
SiC Integrated Circuit Control Electronics for High-Temperature Operation.
IEEE Trans. Ind. Electron.
Mihaela Alexandru, Viorel Banu, Xavier Jordà, Josep Montserrat, Miquel Vellvehí, Dominique Tournier, José Millán, Philippe Godignon
2014 — conf
A positive impact of low proton irradiation energy on oxynitride gate 4H-SiC MOSFETs.
ESSDERC
Matthieu Florentin, José Millán, Philippe Godignon, Mihaela Alexandru, Aurore Constant, Bernd Schmidt
2014 J jnl
Analysis of an ESD failure mechanism on a SiC MESFET.
Microelectron. Reliab.
Tanguy Phulpin, David Trémouilles, Karine Isoird, Dominique Tournier, Philippe Godignon, Patrick Austin
2014 — conf
Study of surface weak spots on SiC Schottky Diodes under specific operating regimes by Infrared Lock-in sensing.
ESSDERC
Javier Leon, Xavier Perpiñà, Miquel Vellvehí, Xavier Jordà, Philippe Godignon
2014 J jnl
Temperature effects on the ruggedness of SiC Schottky diodes under surge current.
Microelectron. Reliab.
Javier Leon, Xavier Perpiñà, Viorel Banu, Josep Montserrat, Maxime Berthou, Miquel Vellvehí, Philippe Godignon, Xavier Jordà
2013 — conf
4H-SiC MESFET specially designed and fabricated for high temperature integrated circuits.
ESSDERC
Mihaela Alexandru, Viorel Banu, Philippe Godignon, Miquel Vellvehí, José Millán
2013 — conf
High temperature-low temperature coefficient analog voltage reference integrated circuit implemented with SiC MESFETs.
ESSCIRC
Viorel Banu, Philippe Godignon, Mihaela Alexandru, Miquel Vellvehí, Xavier Jordà, José Millán
2012 J jnl
Enhanced power cycling capability of SiC Schottky diodes using press pack contacts.
Microelectron. Reliab.
Viorel Banu, Philippe Godignon, Xavier Perpiñà, Xavier Jordà, José Millán
2012 — conf
High voltage low Ron in-situ SiN/Al0.35GaN0.65/GaN-on-Si power HEMTs operation up to 300°C.
ESSDERC
Abel Fontserè, Amador Pérez-Tomás, Philippe Godignon, José Millán, J. M. Parsey, Peter Moens
2012 J jnl
Wafer scale and reliability investigation of thin HfO
Microelectron. Reliab.
Abel Fontserè, Amador Pérez-Tomás, Philippe Godignon, José Millán, Herbert De Vleeschouwer, John M. Parsey, Peter Moens
2011 J jnl
SiC Schottky Diodes for Harsh Environment Space Applications.
IEEE Trans. Ind. Electron.
Philippe Godignon, Xavier Jordà, Miquel Vellvehí, Xavier Perpiñà, Viorel Banu, Demetrio López, Juan Barbero, Pierre Brosselard, Silvia Massetti
2008 J jnl
Behaviour of 1.2 kV SiC JBS diodes under repetitive high power stress.
Microelectron. Reliab.
Viorel Banu, Pierre Brosselard, Xavier Jordà, Josep Montserrat, Philippe Godignon, José Millán
2007 J jnl
Coupled electro-thermal simulation of a DC/DC converter.
Microelectron. Reliab.
Miquel Vellvehí, Xavier Jordà, Philippe Godignon, Carles Ferrer, José Millán
2007 J jnl
Manufacturing and full characterization of silicon carbide-based multi-sensor micro-probes for biomedical applications.
Microelectron. J.
Gemma Gabriel, Ivan Erill, Jaume Caro, Rodrigo Gómez, Dolors Riera, Rosa Villa, Philippe Godignon
2004 J jnl
IGBT gate driver IC with full-bridge output stage using a modified standard CMOS process.
Microelectron. J.
Amador Pérez-Tomás, Xavier Jordà, Philippe Godignon, Jose Luis Gálvez, Miquel Vellvehí, José Millán
2004 J jnl
Self-heating experimental study of 600V PT-IGBTs under low dissipation energies.
Microelectron. J.
Xavier Perpiñà, Xavier Jordà, N. Mestres, Miquel Vellvehí, Philippe Godignon, José Millán
2001 J jnl
The electron irradiation effects on silicon gate dioxide used for power MOS devices.
Microelectron. Reliab.
Marian Badila, Philippe Godignon, José Millán, S. Berberich, Gheorghe Brezeanu