Philippe Eudeline

11 papers Journal 8Unranked 3
YearRankTypeTitle / Venue / Authors
2014 — conf
A workbench development for L-band LDMOS amplifier reliability study (electronic power transistors reliabilty for radar applications).
ICMCS
Pascal Dherbécourt, Olivier Latry, Eric Joubert, Karine Dehais-Mourgues, Hichame Maanane, Jean Pierre Sipma, Philippe Eudeline
2012 J jnl
Compared deep class-AB and class-B ageing on AlGaN/GaN HEMT in S-Band pulsed-RF operating life.
Microelectron. Reliab.
Jean-Baptiste Fonder, Olivier Latry, Cedric Duperrier, M. Stanislawiak, Hichame Maanane, Philippe Eudeline, Farid Temcamani
2012 — conf
Failure analysis of hot-electron effect on power RF N-LDMOS transistors.
DTIS
Mohamed Ali Belaïd, M. Gares, K. Daoud, Philippe Eudeline
2011 J jnl
Characterization and modeling of hot carrier injection in LDMOS for L-band radar application.
Microelectron. Reliab.
Loïc Lachèze, Olivier Latry, Pascal Dherbécourt, Karine Mourgues, V. Purohit, Hichame Maanane, Jean Pierre Sipma, F. Cornu, Philippe Eudeline
2011 J jnl
S-parameter performance degradation in power RF N-LDMOS devices due to hot carrier effects.
Microelectron. Reliab.
Mohamed Ali Belaïd, M. Gares, K. Daoud, Philippe Eudeline
2010 J jnl
A 5000 h RF life test on 330 W RF-LDMOS transistors for radars applications.
Microelectron. Reliab.
Olivier Latry, Pascal Dherbécourt, Karine Mourgues, Hichame Maanane, Jean Pierre Sipma, F. Cornu, Philippe Eudeline, Mohamed Masmoudi
2007 J jnl
Study of hot-carrier effects on power RF LDMOS device reliability.
Microelectron. Reliab.
M. Gares, Mohamed Ali Belaïd, Hichame Maanane, Mohamed Masmoudi, Jérôme Marcon, Karine Mourgues, Philippe Eudeline
2006 J jnl
Hot carrier reliability of RF N- LDMOS for S Band radar application.
Microelectron. Reliab.
M. Gares, Hichame Maanane, Mohamed Masmoudi, Pierre Bertram, Jérôme Marcon, Mohamed Ali Belaïd, Karine Mourgues, C. Tolant, Philippe Eudeline
2006 — conf
Impact de la Temperature sur la Fiabilite des Composants rf Ldmos de Puissance.
CCECE
M. Gares, Hichame Maanane, Mohamed Ali Belaïd, Mohamed Masmoudi, Jérôme Marcon, Karine Mourgues, Pierre Bertram, Philippe Eudeline
2006 J jnl
Study of RF N
Microelectron. Reliab.
Hichame Maanane, Mohamed Masmoudi, Jérôme Marcon, Mohamed Ali Belaïd, Karine Mourgues, C. Tolant, K. Ketata, Philippe Eudeline
2004 J jnl
Reliability study of Power RF LDMOS for Radar Application.
Microelectron. Reliab.
Hichame Maanane, Pierre Bertram, Jérôme Marcon, Mohamed Masmoudi, Mohamed Ali Belaïd, Karine Mourgues, Philippe Eudeline, K. Ketata