Peter Moens

31 papers Journal 13Unranked 18
YearRankTypeTitle / Venue / Authors
2025 — conf
Recombination-Driven Interface Trap Generation in SiC MOSFETs Under Constant Voltage and Constant Current Stress.
IRPS
Alberto Marcuzzi, M. Avramenko, Carlo De Santi, Peter Moens, G. J. Gomez Garcia, A. Feng, T. Grasser, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
2024 — conf
Charge Trapping in SiC MOSFETs under Constant Gate Current Stress: Analysis Based on Charge Pumping Measurements.
IRPS
Alberto Marcuzzi, M. Avramenko, Carlo De Santi, Peter Moens, F. Geenen, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini
2024 — conf
On the Intrinsic and Extrinsic Reliability Challenges of SiC MOSFETs.
IRPS
Peter Moens, F. Geenen, M. Avramenko, G. Gomez-Garcia, Kevin Matocha
2024 — conf
Threshold Voltage Drift and Recovery of SiC Trench MOSFETs During TDDB Stress.
IRPS
M. Avramenko, L. De Schepper, J.-F. Cano, F. Geenen, Peter Moens, Alberto Marcuzzi, Carlo De Santi, Matteo Meneghini
2023 — conf
The Concept of Safe Operating Area for Gate Dielectrics: the SiC/SiO2 Case Study.
IRPS
Peter Moens, F. Geenen, L. De Schepper, JF Cano, J. Lettens, S. Maslougkas, J. Franchi, Martin Domeij
2022 — conf
Analysis and Modeling of Vth Shift in 4H-SiC MOSFETs at Room and Cryogenic-Temperature.
IRPS
Fabrizio Masin, Carlo De Santi, Arno Stockman, J. Lettens, F. Geenen, Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, Matteo Meneghini
2020 — conf
Charge Trapping and Stability of E-Mode p-gate GaN HEMTs Under Soft- and Hard- Switching Conditions.
IRPS
Fabrizio Masin, Matteo Meneghini, Eleonora Canato, Alessandro Barbato, Carlo De Santi, Arno Stockman, Abhishek Banerjee, Peter Moens, Enrico Zanoni, Gaudenzio Meneghesso
2019 — conf
A Physical-Statistical Approach to AlGaN/GaN HEMT Reliability.
IRPS
Peter Moens, Arno Stockman
2019 — conf
Impact of Sidewall Etching on the Dynamic Performance of GaN-on-Si E-Mode Transistors.
IRPS
Alaleh Tajalli, Eleonora Canato, Arianna Nardo, Matteo Meneghini, Arno Stockman, Peter Moens, Enrico Zanoni, Gaudenzio Meneghesso
2019 — conf
µs-Range Evaluation of Threshold Voltage Instabilities of GaN-on-Si HEMTs with p-GaN Gate.
IRPS
Eleonora Canato, Fabrizio Masin, Matteo Borga, Enrico Zanoni, Matteo Meneghini, Gaudenzio Meneghesso, Arno Stockman, Abhishek Banerjee, Peter Moens
2018 J jnl
Impact of sidewall etching on the dynamic performance of GaN-on-Si E-mode transistors.
Microelectron. Reliab.
Alaleh Tajalli, Eleonora Canato, Arianna Nardo, Matteo Meneghini, Arno Stockman, Peter Moens, Enrico Zanoni, Gaudenzio Meneghesso
2018 — conf
On the origin of the leakage current in p-gate AlGaN/GaN HEMTs.
IRPS
Arno Stockman, Eleonora Canato, Alaleh Tajalli, Matteo Meneghini, Gaudenzio Meneghesso, Enrico Zanoni, Peter Moens, Benoit Bakeroot
2017 J jnl
Field and hot electron-induced degradation in GaN-based power MIS-HEMTs.
Microelectron. Reliab.
Alaleh Tajalli, Matteo Meneghini, Isabella Rossetto, Peter Moens, Abhishek Banerjee, Enrico Zanoni, Gaudenzio Meneghesso
2017 — conf
Temperature dependent substrate trapping in AlGaN/GaN power devices and the impact on dynamic ron.
ESSDERC
Arno Stockman, Michael J. Uren, Alaleh Tajalli, Matteo Meneghini, Benoit Bakeroot, Peter Moens
2015 — conf
Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors.
IRPS
Matteo Meneghini, Riccardo Silvestri, Stefano Dalcanale, Davide Bisi, Enrico Zanoni, Gaudenzio Meneghesso, Piet Vanmeerbeek, Abhishek Banerjee, Peter Moens
2015 — conf
Technology and design of GaN power devices.
ESSDERC
Peter Moens, Abhishek Banerjee, P. Coppens, Aurore Constant, Piet Vanmeerbeek, Z. Li, F. Declercq, L. De Schepper, H. De Vleeschouwer, C. Liu, B. Padmanabhan, W. Jeon, J. Guo, A. Salih, Marnix Tack
2015 — conf
Trapping induced parasitic effects in GaN-HEMT for power switching applications.
ICICDT
Gaudenzio Meneghesso, Matteo Meneghini, Enrico Zanoni, Piet Vanmeerbeek, Peter Moens
2012 — conf
High voltage low Ron in-situ SiN/Al0.35GaN0.65/GaN-on-Si power HEMTs operation up to 300°C.
ESSDERC
Abel Fontserè, Amador Pérez-Tomás, Philippe Godignon, José Millán, J. M. Parsey, Peter Moens
2012 J jnl
Influence of charge balance on the robustness of trench-based super junction diodes.
Microelectron. Reliab.
Ana Villamor-Baliarda, Piet Vanmeerbeek, Michele Riccio, Vincenzo d'Alessandro, Andrea Irace, Jaume Roig, David Flores, Peter Moens
2012 J jnl
Wafer scale and reliability investigation of thin HfO
Microelectron. Reliab.
Abel Fontserè, Amador Pérez-Tomás, Philippe Godignon, José Millán, Herbert De Vleeschouwer, John M. Parsey, Peter Moens
2011 J jnl
Electric field unbalance for robust floating ring termination.
Microelectron. Reliab.
Ana Villamor-Baliarda, Piet Vanmeerbeek, Jaume Roig, Peter Moens, David Flores
2010 J jnl
Next generation of Deep Trench Isolation for Smart Power technologies with 120 V high-voltage devices.
Microelectron. Reliab.
R. Charavel, Jaume Roig, S. Mouhoubi, P. Gassot, Filip Bauwens, Piet Vanmeerbeek, B. Desoete, Peter Moens, Eddy De Backer
2008 — conf
Next Generation Smart Power Technologies - Challenges and Innovations Enabling Complex SoC Integration.
ISSCC
Marnix Tack, Peter Moens, Renaud Gillon, Johan Janssens, Stefan Van Roeyen, Jan Sevenhans
2008 J jnl
Reliability assessment of integrated power transistors: Lateral DMOS versus vertical DMOS.
Microelectron. Reliab.
Peter Moens, Geert Van den Bosch
2008 J jnl
Thermal resistance assessment in multi-trenched power devices.
Microelectron. Reliab.
Jaume Roig, B. Desoete, Filip Bauwens, F. Lovadina, Peter Moens
2007 J jnl
Integration of an SCR in an active clamp.
Microelectron. Reliab.
K. Reynders, Peter Moens
2007 J jnl
Lifetime modeling of intrinsic gate oxide breakdown at high temperature.
Microelectron. Reliab.
R. Moonen, Piet Vanmeerbeek, G. Lekens, Ward De Ceuninck, Peter Moens, J. Boutsen
2007 J jnl
TLP Characterization of large gate width devices.
Microelectron. Reliab.
Peter Coppens, G. Jenicot, Herman Casier, F. De Pestel, F. Depuydt, N. Martens, Peter Moens
2004 J jnl
Evidence for source side injection hot carrier effects on lateral DMOS transistors.
Microelectron. Reliab.
Stefano Aresu, Ward De Ceuninck, Geert Van den Bosch, Guido Groeseneken, Peter Moens, Jean Manca, D. Wojciechowski, P. Gassot
2004 J jnl
Locating hot carrier injection in n-type DeMOS transistors by Charge Pumping and 2D device simulations.
Microelectron. Reliab.
Filip Bauwens, Peter Moens
2004 — conf
Technology considerations for automotive.
ESSCIRC
Herman Casier, Peter Moens, Koen Appeltans