Peide D. Ye - RankMe

21 papers Unranked 21

Year	Rank	Type	Title / Venue / Authors
2025	—	`conf`	Analog Multilevel eDRAM-RRAM CIM for Zeroth-Order Fine-tuning of LLMs. IMW Mufeng Chen, Luqi Zheng, Jian-Yu Lin, Peide D. Ye, Haitong Li
2025	—	`conf`	Asymmetric Reliability and Universality of Defect Formation in Oxide-Gated Ultra-Thin In2O3Vertical FETs for Monolithic 3-D Integration. IRPS Chun-An Shih, Mir Md Fahimul Islam, Sumi Lee, Peide D. Ye, Muhammad Ashraful Alam
2024	—	`conf`	Enhancement of In2O3 Field-Effect Mobility Up To 152 cm VLSI Technology and Circuits Zehao Lin, Chang Niu, Hyeongjun Jang, Taehyun Kim, Yizhi Zhang, Haiyan Wang, Changwook Jeong, Peide D. Ye
2024	—	`conf`	Positive to Negative Schottky Barrier Transition in Metal/Oxide Semiconductor Contacts by Tuning Indium Concentration in IGZO. VLSI Technology and Circuits Sumi Lee, Chang Niu, Yizhi Zhang, Haiyan Wang, Peide D. Ye
2023	—	`conf`	FeFET-Based Synaptic Cross-Bar Arrays for Deep Neural Networks: Impact of Ferroelectric Thickness on Device-Circuit Non-Idealities and System Accuracy. DRC Chunguang Wang, Jeffry Victor, Atanu K. Saha, X. Chen, M. Si, T. Sharma, K. Roy, Peide D. Ye, Sumeet Kumar Gupta
2023	—	`conf`	First Demonstration of BEOL-Compatible Atomic-Layer-Deposited InGaZnO TFTs with 1.5 nm Channel Thickness and 60 nm Channel Length Achieving ON/OFF Ratio Exceeding 10 VLSI Technology and Circuits Jie Zhang, Zhuocheng Zhang, Zehao Lin, Ke Xu, Hongyi Dou, Bo Yang, Xinghang Zhang, Haiyan Wang, Peide D. Ye
2023	—	`conf`	Ultrahigh Bias Stability of ALD In2O3 FETs Enabled by High Temperature O2 Annealing. VLSI Technology and Circuits Zhuocheng Zhang, Zehao Lin, Chang Niu, Mengwei Si, Muhammad Ashraful Alam, Peide D. Ye
2023	—	`conf`	Ultrathin Atomic-Layer-Deposited In2O3 Radio-Frequency Transistors with Record High fT of 36 GHz and BEOL Compatibility. VLSI Technology and Circuits Dongqi Zheng, Adam Charnas, Jian-Yu Lin, Jackson Anderson, Dana Weinstein, Peide D. Ye
2022	—	`conf`	Determination of Domain Wall Velocity and Nucleation Time by Switching Dynamics Studies of Ferroelectric Hafnium Zirconium Oxide. VLSI Technology and Circuits Xiao Lyu, Pragya R. Shrestha, Mengwei Si, Panni Wang, Junkang Li, Kin P. Cheung, Shimeng Yu, Peide D. Ye
2022	—	`conf`	Record RF Performance of Ultra-thin Indium Oxide Transistors with Buried-gate Structure. DRC Adam Charnas, Jackson Anderson, Jie Zhang, Dongqi Zheng, Dana Weinstein, Peide D. Ye
2022	—	`conf`	Thermal Studies of BEOL-compatible Top-Gated Atomically Thin ALD In2O3 FETs. VLSI Technology and Circuits Pai-Ying Liao, Sami Alajlouni, Mengwei Si, Zhuocheng Zhang, Zehao Lin, Jinhyun Noh, Calista Wilk, Ali Shakouri, Peide D. Ye
2022	—	`conf`	Ultra-Fast Operation of BEOL-Compatible Atomic-Layer-Deposited In2O3 Fe-FETs: Achieving Memory Performance Enhancement with Memory Window of 2.5 V and High Endurance > 10 VLSI Technology and Circuits Zehao Lin, Mengwei Si, Peide D. Ye
2019	—	`conf`	Modeling of Leakage-Assist-Switching in Ferroelectric/Dielectric Stack. DRC Mengwei Si, Xiao Lyu, Peide D. Ye
2018	—	`conf`	2D Ferroelectric CuInP DRC Pai-Ying Liao, Mengwei Si, Gang Qiu, Peide D. Ye
2018	—	`conf`	Alleviation of Short Channel Effects in Ge Negative Capacitance pFinFETs. DRC Wonil Chung, Mengwei Si, Peide D. Ye
2018	—	`conf`	High-Performance Few-Layer Tellurium CMOS Devices Enabled by Atomic Layer Deposited Dielectric Doping Technique. DRC Gang Qiu, Mengwei Si, Yixiu Wang, Xiao Lyu, Wenzhuo Wu, Peide D. Ye
2018	—	`conf`	Low frequency noise in MOS2 negative capacitance field-effect transistor. IRPS Sami Alghamdi, Mengwei Si, Lingming Yang, Peide D. Ye
2018	—	`conf`	Steep-Slope Hysteresis-Free Negative-Capacitance 2D Transistors. DRC Peide D. Ye
2018	—	`conf`	The Impact of Substrates on the Performance of Top-Gate p-Ga203 Field-Effect Transistors: Record High Drain Current of 980 mA/mm on Diamond. DRC Jinhyun Noh, Mengwei Si, Hong Zhou, Marko J. Tadjer, Peide D. Ye
2018	—	`conf`	Time Response of Polarization Switching in Ge Hafnium Zirconium Oxide Nanowire Ferroelectric Field-effect Transistors. DRC Sami Alghamdi, Wonil Chung, Mengwei Si, Peide D. Ye
2015	—	`conf`	Characterization and reliability of III-V gate-all-around MOSFETs. IRPS Mengwei Si, Sanghoon Shin, Nathan J. Conrad, Jiangjiang Gu, Jingyun Zhang, Muhammad Ashraful Alam, Peide D. Ye