Pavel Hazdra

12 papers Journal 10Unranked 2
YearRankTypeTitle / Venue / Authors
2024 J jnl
Reconfigurable Antenna Array Testbed for Quantized Controlling.
IEEE Access
Michal Pokorny, Ivo Vertat, David Pánek, Pavel Hazdra, Milan Svanda, Jan Kracek, Milos Mazanek, Jiri Masopust, Pavel Karban
2020 J jnl
A Head/Taillight Featuring Hybrid Planar Visible Light Communications/Millimetre Wave Antenna for Vehicular Communications.
IEEE Access
Mojtaba Mansour Abadi, Pavel Hazdra, Jan Bohata, Petr Chvojka, Paul Anthony Haigh, Zabih Ghassemlooy, Stanislav Zvanovec
2020 — conf
Antenna Phased Array Beamforming at 26 GHz Using Optical True Time-Delay.
CSNDSP
Jan Bohata, Tomás Lonský, Jan Spácil, Pavel Hazdra, Zdenek Hradecký, Matej Komanec, Stanislav Zvánovec, Luis Vallejo, Beatriz Ortega
2017 J jnl
Operation of 4H-SiC high voltage normally-OFF V-JFET in radiation hard conditions: Simulations and experiment.
Microelectron. Reliab.
Stanislav Popelka, Pavel Hazdra, V. Záhlava
2015 — conf
Simulation and characterization of ion irradiated 4H-SiC JBS diode.
MIXDES
Rupendra Kumar Sharma, Pavel Hazdra, Stanislav Popelka
2008 J jnl
Dynamic avalanche in diodes with local lifetime control by means of palladium.
Microelectron. J.
J. Vobecký, Pavel Hazdra
2008 J jnl
Optical characterisation of MOVPE grown vertically correlated InAs/GaAs quantum dots.
Microelectron. J.
Pavel Hazdra, Jan Voves, J. Oswald, K. Kuldová, A. Hospodková, Eduard Hulicius, Jirí Pangrác
2007 J jnl
Local lifetime control in silicon power diode by ion irradiation: introduction and stability of shallow donors.
IET Circuits Devices Syst.
Pavel Hazdra, V. Komarnitskyy
2006 J jnl
Lifetime control in silicon power P-i-N diode by ion irradiation: Suppression of undesired leakage.
Microelectron. J.
Pavel Hazdra, V. Komarnitskyy
2004 J jnl
Axial lifetime control in silicon power diodes by irradiation with protons, alphas, low- and high-energy electrons.
Microelectron. J.
Pavel Hazdra, Jan Vobecký, H. Dorschner, K. Brand
2003 J jnl
Advanced Local Lifetime Control for Higher Reliability of Power Devices.
Microelectron. Reliab.
J. Vobecký, Pavel Hazdra
2003 J jnl
Impact of the electron, proton and helium irradiation on the forward I-V characteristics of high-power P-i-N diode.
Microelectron. Reliab.
J. Vobecký, Pavel Hazdra, V. Záhlava