Paul K. Hurley

14 papers Journal 11Unranked 3
YearRankTypeTitle / Venue / Authors
2018 — conf
High Aspect Ratio Junctionless InGaAs FinFETs Fabricated Using a Top-Down Approach.
DRC
D. A. J. Millar, X. Li, U. Peralagu, M. J. Steer, I. M. Pavey, Guilherme Gaspar, M. Schmidt, Paul K. Hurley, Iain G. Thayne
2017 — conf
Advances of the development of a ferroelectric field-effect transistor on Ge(001).
ICICDT
Patrick Ponath, Agham B. Posadas, Yuan Ren, Xiaoyu Wu, Keji Lai, Alex Demkov, Michael Schmidt, Ray Duffy, Paul K. Hurley, Jian Wang, Chadwin D. Young, Rama K. Vasudevan, M. Baris Okatan, Stephen Jesse, Sergei V. Kalinin
2017 — conf
Impact of impurities, interface traps and contacts on MoS2 MOSFETs: Modelling and experiments.
ESSDERC
Gioele Mirabelli, Farzan Gity, Scott Monaghan, Paul K. Hurley, Ray Duffy
2013 J jnl
Direct observation of the generation of breakdown spots in MIM structures under constant voltage stress.
Microelectron. Reliab.
X. Saura, D. Moix, Jordi Suñé, Paul K. Hurley, Enrique Miranda
2010 J jnl
Exploratory analysis of the breakdown spots spatial distribution in metal gate/high-K/III-V stacks using functional summary statistics.
Microelectron. Reliab.
Enrique Miranda, Eamon O'Connor, Paul K. Hurley
2009 J jnl
Effects of the electrical stress on the conduction characteristics of metal gate/MgO/InP stacks.
Microelectron. Reliab.
Enrique Miranda, Javier Martín-Martínez, Eamon O'Connor, G. Hughes, P. Casey, Karim Cherkaoui, S. Monaghan, R. Long, D. O'Connell, Paul K. Hurley
2007 J jnl
Characterisation and passivation of interface defects in (1 0 0)-Si/SiO
Microelectron. Reliab.
Paul K. Hurley, Karim Cherkaoui, S. McDonnell, G. Hughes, A. W. Groenland
2007 J jnl
Extracting the relative dielectric constant for "high-kappa layers" from CV measurements - Errors and error propagation.
Microelectron. Reliab.
Octavian Buiu, Steve Hall, Olof Engström, B. Raeissi, Max Christian Lemme, Paul K. Hurley, Karim Cherkaoui
2007 J jnl
Physical and electrical properties of low dielectric constant self-assembled mesoporous silica thin films.
Microelectron. Reliab.
Richard A. Farrell, Karim Cherkaoui, Nikolay Petkov, Heinz Amenitsch, Justin D. Holmes, Paul K. Hurley, Michael A. Morris
2005 J jnl
Editorial.
Microelectron. Reliab.
Paul K. Hurley
2005 J jnl
Electrical characterization of HfO
Microelectron. Reliab.
J. M. Decams, H. Guillon, Carmen Jiménez, M. Audier, J. P. Sénateur, C. Dubourdieu, O. Cadix, Barry J. O'Sullivan, Mircea Modreanu, Paul K. Hurley
2005 J jnl
Optical and electrical characterization of hafnium oxide deposited by MOCVD.
Microelectron. Reliab.
Y. Lu, Octavian Buiu, Steve Hall, Paul K. Hurley
2005 J jnl
Post deposition UV-induced O
Microelectron. Reliab.
Q. Fang, I. Liaw, Mircea Modreanu, Paul K. Hurley, I. W. Boyd
2001 J jnl
Flat band voltage shift and oxide properties after rapid thermal annealing.
Microelectron. Reliab.
Barry J. O'Sullivan, Paul K. Hurley, F. N. Cubaynes, P. A. Stolk, F. P. Widdershoven