Patrick Tounsi

16 papers Journal 11Unranked 5
YearRankTypeTitle / Venue / Authors
2019 — conf
Detecting PCB Assembly Defects Using Infrared Thermal Signatures.
MIXDES
Nabil El Belghiti Alaoui, Patrick Tounsi, Alexandre Boyer, Arnaud Viard
2019 — conf
Development of SiC MOSFET Electrical Model and Experimental Validation: Improvement and Reduction of Parameter Number.
MIXDES
Quang Chuc Nguyen, Patrick Tounsi, Jean-Pierre Fradin, Jean-Michel Reynes
2019 — conf
Using Compact Thermal Modelling for the Investigation of a Cooling System Dysfunction Applied to a Power Module with Double Sided Cooling.
MIXDES
Anaïs Cassou, Patrick Tounsi, Jean-Pierre Fradin
2018 J jnl
New defect detection approach using near electromagnetic field probing of high density PCBAs.
Microelectron. Reliab.
Nabil El Belghiti Alaoui, Alexandre Boyer, Patrick Tounsi, Arnaud Viard
2018 — conf
New testing approach using near electromagnetic field probing intending to upgrade in-circuit testing of high density PCBAs.
NATW
Nabil El Belghiti Alaoui, Patrick Tounsi, Alexandre Boyer, Arnaud Viard
2018 J jnl
Upgrading In-Circuit Test of High Density PCBAs Using Electromagnetic Measurement and Principal Component Analysis.
J. Electron. Test.
Nabil El Belghiti Alaoui, Alexandre Boyer, Patrick Tounsi, Arnaud Viard
2013 — conf
Distributed electrothermal modeling methodology for MOS gated power devices simulations.
MIXDES
Emmanuel Marcault, Jean-Luc Massol, Patrick Tounsi, Jean-Marie Dorkel
2013 J jnl
Estimation of power MOSFET junction temperature during avalanche mode: Experimental tests and modelling.
Microelectron. Reliab.
Toufik Azoui, Patrick Tounsi, Jean-Marie Dorkel, Jean-Michel Reynes, Jean-Luc Massol, E. Pomes
2012 J jnl
Innovative methodology to extract dynamic compact thermal models: Application to power devices.
Microelectron. J.
Toufik Azoui, Patrick Tounsi, Jean-Marie Dorkel
2012 J jnl
Study of mechanical stress impact on the I-V characteristics of a power VDMOS device using 2D FEM simulations.
Microelectron. Reliab.
Emmanuel Marcault, Marie Breil, A. Bourennane, Patrick Tounsi, Jean-Marie Dorkel
2011 J jnl
3D Electro-thermal modelling of bonding and metallization ageing effects for reliability improvement of power MOSFETs.
Microelectron. Reliab.
Toufik Azoui, Patrick Tounsi, Philippe Dupuy, Laurent Guillot, Jean-Marie Dorkel
2008 J jnl
3D electro-thermal investigations for reliability of ultra low ON state resistance power MOSFET.
Microelectron. Reliab.
Jean-Baptiste Sauveplane, Patrick Tounsi, Emmanuel Scheid, A. Deram
2008 J jnl
Performance and reliability testing of modern IGBT devices under typical operating conditions of aeronautic applications.
Microelectron. Reliab.
Jean-Luc Fock Sui Too, B. Chauchat, Patrick Austin, Patrick Tounsi, Michel Mermet-Guyennet, Régis Meuret
2007 J jnl
Characterization and modelling of ageing failures on power MOSFET devices.
Microelectron. Reliab.
B. Khong, Marc Legros, Patrick Tounsi, Philippe Dupuy, X. Chauffleur, Colette Levade, G. Vanderschaeve, Emmanuel Scheid
2005 J jnl
Innovative Methodology for Predictive Reliability of Intelligent Power Devices Using Extreme Electro-thermal Fatigue.
Microelectron. Reliab.
B. Khong, Patrick Tounsi, Philippe Dupuy, X. Chauffleur, Marc Legros, A. Deram, Colette Levade, G. Vanderschaeve, Jean-Marie Dorkel, Jean-Pierre Fradin
2002 J jnl
Characterization method of thermomechanical parameters for microelectronic materials.
Microelectron. Reliab.
Oliver Perat, Jean-Marie Dorkel, Emmanuel Scheid, Pierre Temple-Boyer, Y. S. Chung, A. Peyre-Lavigne, M. Zecri, Patrick Tounsi