Pascal Masson

16 papers A 1C 1Journal 4Unranked 10
YearRankTypeTitle / Venue / Authors
2024 — conf
MOSFET electron mobility enhancement using source/drain recess.
DTTIS
Lucas Antunes Tambara, Paul Devoge, Pascal Masson, Julien Amouroux, Julien Dura, C. Rivero, Franck Julien
2023 — conf
40nm SONOS Embedded Select in Trench Memory.
ESSDERC
Radouane Habhab, Vincenzo Della Marca, Pascal Masson, Nadia Miridi, Clement Pribat, Simon Jeannot, Thibault Kempf, Marc Mantelli, Philippe Lorenzini, Jean-Marc Voisin, Arnaud Régnier, Stephan Niel, Francesco La Rosa
2023 — conf
Notched gate MOSFET for capacitance reduction in RF SOI technology.
DTTIS
Lucas Antunes Tambara, Pascal Masson, Julien Amouroux, Stéphane Monfray, Julien Dura, Frederic Gianesello, Julien Babic, Romain Debroucke, Loic Welter, Siddhartha Dhar, Bernadette Gros, Clement Charbuillet, Franck Julien, Guillaume Bertrand, Arnaud Régnier, Alain Fleury
2022 — conf
A Schmitt trigger to benchmark the performance of a new zero-cost transistor.
ICECS 2022
Paul Devoge, Hassen Aziza, Philippe Lorenzini, Pascal Masson, Alexandre Malherbe, Franck Julien, Abderrezak Marzaki, Arnaud Régnier, Stephan Niel
2018 — conf
Threshold voltage bitmap analysis methodology: Application to a 512kB 40nm Flash memory test chip.
IRPS
Thibault Kempf, Vincenzo Della Marca, L. Baron, F. Maugain, Francesco La Rosa, Stephan Niel, Arnaud Régnier, Jean-Michel Portal, Pascal Masson
2015 — conf
Dynamic current reduction of CMOS digital circuits through design and process optimization.
PATMOS
Jordan Innocenti, Loïc Welter, Nicolas Borrel, Franck Julien, Jean-Michel Portal, Jacques Sonzogni, Laurent Lopez, Pascal Masson, Stephan Niel, Philippe Dreux, Julia Castellan
2015 — conf
Layout optimizations to decrease internal power and area in digital CMOS standard cells.
MIPRO
Jordan Innocenti, Franck Julien, Jean-Michel Portal, Laurent Lopez, Q. Hubert, Pascal Masson, Jacques Sonzogni, Stephan Niel, Arnaud Régnier
2014 — conf
Dynamic power reduction through process and design optimizations on CMOS 80 nm embedded non-volatile memories technology.
MWSCAS
Jordan Innocenti, Loic Welter, Franck Julien, Laurent Lopez, Jacques Sonzogni, Stephan Niel, Arnaud Régnier, Emmanuel Paire, Karen Labory, Eric Denis, Jean-Michel Portal, Pascal Masson
2014 — conf
Effect of AC stress on oxide TDDB and trapped charge in interface states.
ISIC
Benjamin Rebuffat, Pascal Masson, Jean-Luc Ogier, Marc Mantelli, Romain Laffont
2013 — conf
Effect of ions presence in the SiOCH inter metal dielectric structure.
ESSDERC
Benjamin Rebuffat, Vincenzo Della Marca, Pascal Masson, Jean-Luc Ogier, Marc Mantelli, Olivier Paulet, Laurent Lopez, Romain Laffont
2012 J jnl
Effects of 1064 nm laser on MOS capacitor.
Microelectron. Reliab.
R. Llido, Pascal Masson, Arnaud Régnier, Vincent Goubier, Gérald Haller, Vincent Pouget, Dean Lewis
2012 J jnl
Effects of Lightly Doped Drain and Channel Doping Variations on Flash Memory Performances and Reliability.
J. Low Power Electron.
Guillaume Just, Vincenzo Della Marca, Arnaud Régnier, Jean-Luc Ogier, Jérémy Postel-Pellerin, Jean-Michel Portal, Pascal Masson
2012 J jnl
Investigation of the effects of constant voltage stress on thin SiO
Microelectron. Reliab.
Philippe Chiquet, Pascal Masson, Romain Laffont, Gilles Micolau, Jérémy Postel-Pellerin, Frédéric Lalande, Bernard Bouteille, Jean-Luc Ogier
2006 C conf
MM11 based flash memory cell model including characterization procedure.
ISCAS
B. Saillet, Arnaud Régnier, Jean-Michel Portal, B. Delsuc, Romain Laffont, Pascal Masson, Rachid Bouchakour
2005 J jnl
Characterization and Modeling of Gate-Induced-Drain-Leakage.
IEICE Trans. Electron.
Fabien Gilibert, Denis Rideau, Alexandre Dray, François Agut, Michel Minondo, Andre Juge, Pascal Masson, Rachid Bouchakour
2004 A conf
A Tunneling Model for Gate Oxide Failure in Deep Sub-Micron Technology.
DATE
Sandrine Bernardini, Jean-Michel Portal, Pascal Masson