Olivier Latry

15 papers Journal 13Unranked 2
YearRankTypeTitle / Venue / Authors
2020 J jnl
Estimation of losses of GaN HEMT in power switching applications based on experimental characterization.
Comput. Electr. Eng.
Al Mehdi Bouchour, Ahmed El Oualkadi, Olivier Latry, Pascal Dherbécourt, Andres F. Echeverri
2017 J jnl
Characterization of HTRB stress effects on SiC MOSFETs using photon emission spectral signatures.
Microelectron. Reliab.
N. Moultif, Eric Joubert, M. Masmoudi, Olivier Latry
2017 J jnl
Short-circuit robustness test and in depth microstructural analysis study of SiC MOSFET.
Microelectron. Reliab.
Safa Mbarek, Pascal Dherbécourt, Olivier Latry, François Fouquet
2016 J jnl
Effects of drain quiescent voltage on the ageing of AlGaN/GaN HEMT devices in pulsed RF mode.
Microelectron. Reliab.
Alexis Divay, Cedric Duperrier, Farid Temcamani, Olivier Latry
2016 J jnl
Gate oxide degradation of SiC MOSFET under short-circuit aging tests.
Microelectron. Reliab.
Safa Mbarek, François Fouquet, Pascal Dherbécourt, Mohamed Masmoudi, Olivier Latry
2015 J jnl
An athermal measurement technique for long time constants traps characterization in GaN HEMT transistors.
Microelectron. Reliab.
Alexis Divay, Mohamed Masmoudi, Olivier Latry, Cedric Duperrier, Farid Temcamani
2014 — conf
A workbench development for L-band LDMOS amplifier reliability study (electronic power transistors reliabilty for radar applications).
ICMCS
Pascal Dherbécourt, Olivier Latry, Eric Joubert, Karine Dehais-Mourgues, Hichame Maanane, Jean Pierre Sipma, Philippe Eudeline
2014 — conf
Channel temperature estimation of AlGaN/GaN HEMT for pulsed RADAR applications using infrared thermography and electrical characterization.
ICMCS
Jean-Baptiste Fonder, Olivier Latry, Farid Temcamani, Cedric Duperrier
2014 J jnl
Leakage current effects on N-MOSFETs after thermal ageing in pulsed life tests.
Microelectron. J.
Mohamed Ali Belaïd, Ahmed M. Nahhas, M. Gares, K. Daoud, Olivier Latry
2014 J jnl
Performance drifts of N-MOSFETs under pulsed RF life test.
Microelectron. Reliab.
Mohamed Ali Belaïd, M. Gares, K. Daoud, Olivier Latry
2012 J jnl
Compared deep class-AB and class-B ageing on AlGaN/GaN HEMT in S-Band pulsed-RF operating life.
Microelectron. Reliab.
Jean-Baptiste Fonder, Olivier Latry, Cedric Duperrier, M. Stanislawiak, Hichame Maanane, Philippe Eudeline, Farid Temcamani
2012 J jnl
Physical analysis of Schottky contact on power AlGaN/GaN HEMT after pulsed-RF life test.
Microelectron. Reliab.
Jean-Baptiste Fonder, Laetitia Chevalier, Cédric Genevois, Olivier Latry, Cedric Duperrier, Farid Temcamani, Hichame Maanane
2011 J jnl
Characterization and modeling of hot carrier injection in LDMOS for L-band radar application.
Microelectron. Reliab.
Loïc Lachèze, Olivier Latry, Pascal Dherbécourt, Karine Mourgues, V. Purohit, Hichame Maanane, Jean Pierre Sipma, F. Cornu, Philippe Eudeline
2010 J jnl
A 5000 h RF life test on 330 W RF-LDMOS transistors for radars applications.
Microelectron. Reliab.
Olivier Latry, Pascal Dherbécourt, Karine Mourgues, Hichame Maanane, Jean Pierre Sipma, F. Cornu, Philippe Eudeline, Mohamed Masmoudi
2008 J jnl
Comparison of different feedback signals used in one stage PMD compensators for different modulation formats.
IEEE Trans. Commun.
Guillaume Ducournau, Olivier Latry, Eric Joubert, Mohamed Ketata