Oliver Ambacher

20 papers C 2Journal 8Unranked 10
YearRankTypeTitle / Venue / Authors
2021 J jnl
Building Blocks for GaN Power Integration.
IEEE Access
Michael Basler, Richard Reiner, Stefan Moench, Fouad Benkhelifa, Philipp Döring, Patrick Waltereit, Rüdiger Quay, Oliver Ambacher
2020 — conf
Failure Analysis of 100 nm AlGaN/GaN HEMTs Stressed under On- and Off-State Stress.
IRPS
Tobias Kemmer, Michael Dammann, Martina Baeumler, Vladimir Polyakov, Peter Brückner, Helmer Konstanzer, Rüdiger Quay, Oliver Ambacher
2019 — conf
A Dielectric-Filled Cavity-Backed Lens-Coupled Dipole Antenna at 100 GHz.
RWS
Alexander Dyck, Michael Kuri, Markus Rosch, Axel Tessmann, Oliver Ambacher
2017 — conf
Flexural plate wave sensors with buried IDT for sensing in liquids.
IEEE SENSORS
Markus Reusch, Katarzyna Hole, Agne Zukauskaite, Vadim Lebedev, Nicolas Kurz, Oliver Ambacher
2016 — conf
Performance of tri-gate AlGaN/GaN HEMTs.
ESSDERC
Mohamed Alsharef, Ralf Granzner, Frank Schwierz, Erdin Ture, Rüdiger Quay, Oliver Ambacher
2016 J jnl
Spectroscopic Measurement of Material Properties Using an Improved Millimeter-Wave Ellipsometer Based on Metallic Substrates.
IEEE Trans. Instrum. Meas.
Mathias Klenner, Christian Zech, Axel Hülsmann, Jutta Kuhn, Michael Schlechtweg, Oliver Ambacher
2016 — conf
Study of a silicon parallel plate capacitor as a dew point sensor.
IEEE SENSORS
Jochen Stehle, Oliver Ambacher, Ashwin Samarao, Gary Yama, Uma Krishnamoorthy
2015 — conf
High-voltage stress time-dependent dispersion effects in AlGaN/GaN HEMTs.
IRPS
Matthias Wespel, Maximilian Dammann, Vladimir Polyakov, Richard Reiner, Patrick Waltereit, B. Weiss, Rüdiger Quay, Michael Mikulla, Oliver Ambacher
2014 J jnl
Influence of surface states on the voltage robustness of AlGaN/GaN HFET power devices.
Microelectron. Reliab.
Matthias Wespel, Martina Baeumler, Vladimir Polyakov, Maximilian Dammann, Richard Reiner, Patrick Waltereit, Rüdiger Quay, Michael Mikulla, Oliver Ambacher
2014 — conf
Wireless communications on THz carriers takes shape.
ICTON
Wolfgang Freude, Swen Koenig, Daniel Lopez-Diaz, Jochen Antes, Florian Boes, Ralf Henneberger, Arnulf Leuther, Axel Tessmann, René Schmogrow, David Hillerkuss, Robert Palmer, Thomas Zwick, Christian Koos, Oliver Ambacher, Juerg Leuthold, Ingmar Kallfass
2013 — conf
100 Gbit/s wireless link with mm-wave photonics.
OFC/NFOEC
Swen Koenig, Florian Boes, Daniel Lopez-Diaz, Jochen Antes, Ralf Henneberger, René Schmogrow, David Hillerkuss, Robert Palmer, Thomas Zwick, Christian Koos, Wolfgang Freude, Oliver Ambacher, Ingmar Kallfass, Juerg Leuthold
2012 C conf
Active load modules for W-band radiometer calibration.
IGARSS
Ernst Weissbrodt, Axel Tessmann, Michael Schlechtweg, Ingmar Kallfass, Oliver Ambacher
2012 — conf
Millimeter-Wave Monolithic Integrated Circuits and Modules for Safety and Security Applications.
Future Security
Michael Schlechtweg, Axel Tessmann, Axel Hülsmann, Ingmar Kallfass, Arnulf Leuther, Rolf Aidam, Christian Zech, Ulrich J. Lewark, Hermann Massler, Markus Riessle, Martin Zink, Josef Rosenzweig, Oliver Ambacher
2012 — conf
Study on data transmission of complex modulated signals using an MMIC-based 220 GHz wireless link.
ISSSE
Jochen Antes, Tobias Mahler, Thomas Zwick, Axel Tessmann, Oliver Ambacher, Ingmar Kallfass
2011 J jnl
Critical factors influencing the voltage robustness of AlGaN/GaN HEMTs.
Microelectron. Reliab.
M. Cäsar, Maximilian Dammann, Vladimir Polyakov, Patrick Waltereit, Rüdiger Quay, Michael Mikulla, Oliver Ambacher
2011 J jnl
Metamorphic HEMT MMICs and Modules Operating Between 300 and 500 GHz.
IEEE J. Solid State Circuits
Axel Tessmann, Arnulf Leuther, Volker Hurm, Ingmar Kallfass, Hermann Massler, Michael Kuri, Markus Riessle, Martin Zink, Rainer Lösch, Matthias Seelmann-Eggebert, Michael Schlechtweg, Oliver Ambacher
2011 C conf
W-band radiometer system with switching front-end for multi-load calibration.
IGARSS
Ernst Weissbrodt, Ingmar Kallfass, Axel Hülsmann, Axel Tessmann, Arnulf Leuther, Hermann Massler, Oliver Ambacher
2010 J jnl
Efficient AlGaN/GaN Linear and Digital-Switch-Mode Power Amplifiers for Operation at 2 GHz.
IEICE Trans. Electron.
Stephan Maroldt, Dirk Wiegner, Stanislav Vitanov, Vassil Palankovski, Rüdiger Quay, Oliver Ambacher
2009 J jnl
Reliability and degradation mechanism of AlGaN/GaN HEMTs for next generation mobile communication systems.
Microelectron. Reliab.
Maximilian Dammann, W. Pletschen, Patrick Waltereit, Wolfgang Bronner, Rüdiger Quay, Stefan Müller, Michael Mikulla, Oliver Ambacher, P. J. van der Wel, S. Murad, T. Rödle, R. Behtash, F. Bourgeois, K. Riepe, Martin Fagerlind, Einar Örn Sveinbjörnsson
2008 J jnl
Metamorphic HEMT MMICs and Modules for Use in a High-Bandwidth 210 GHz Radar.
IEEE J. Solid State Circuits
Axel Tessmann, Ingmar Kallfass, Arnulf Leuther, Hermann Massler, Michael Kuri, Markus Riessle, Martin Zink, Rainer Sommer, Alfred Wahlen, Helmut Essen, Volker Hurm, Michael Schlechtweg, Oliver Ambacher