Néstor Berbel

13 papers C 1Journal 4Unranked 8
YearRankTypeTitle / Venue / Authors
2024 — conf
Evaluating Modulation Techniques in a Hybrid T-Type Power Converter based on GaN and SiC Semiconductors for Electric Transport.
ISIE
David Lumbreras, Jordi Zaragoza, Néstor Berbel, Luis Romeral
2024 — conf
Exploring GaN Semiconductors Power Losses in DAB Converter Simulation via PLECS.
ISIE
Eduard Martínez, Jordi Zaragoza, Manuel Lamich, Gabriel J. Capella, Néstor Berbel
2024 — conf
Series-Parallel Connection of GaN-based DAB Converters for Electric Vehicle Charging.
ISIE
Manel Vilella, Néstor Berbel, Gabriel J. Capella, Manuel Lamich, Jordi Zaragoza
2024 — conf
Variable frequency control strategy for transformers surge current reduction in DAB converters.
ISIE
Manel Vilella, Jordi Zaragoza, Néstor Berbel, Gabriel J. Capella, Manuel Lamich
2023 J jnl
Constant Common-Mode Voltage Strategies Using Sigma-Delta Modulators in Five-Phase VSI.
IEEE Trans. Ind. Electron.
Fernando Acosta-Cambranis, Jordi Zaragoza, Néstor Berbel, Gabriel J. Capella, Luis Romeral
2021 — conf
Efficiency Comparison of Power Converters Based on SiC and GaN Semiconductors at High Switching Frequencies.
ISIE
David Lumbreras, Jordi Zaragoza, Néstor Berbel, Juan Mon, Eduardo Gálvez, Alfonso Collado
2021 — conf
High-Frequency Spread-Spectrum Modulations for Wide-Bandgap Voltage Source Converters.
ICIT
David Lumbreras, Jordi Zaragoza, Néstor Berbel, Juan Mon, Eduardo Gálvez, Alfonso Collado
2021 — conf
Performance Assessment of a Wide-Bandgap-Semiconductor Dual-Active-Bridge Converter for Electrical Vehicles.
ISIE
Néstor Berbel, Gabriel J. Capella, Jordi Zaragoza, Jose Luis Romeral
2019 C conf
Study of modulation techniques applied to full bridge single-phase inverters based on wide-bandgap semiconductors.
IECON
Lluís Ferrer-Arnau, Néstor Berbel, Gabriel J. Capella, Jordi Zaragoza
2013 — conf
Characterization of conducted emission at high frequency under different temperature.
EMC Compo
Néstor Berbel, Raúl Fernández-García, Ignacio Gil
2011 J jnl
Experimental verification of the usefulness of the nth power law MOSFET model under hot carrier wearout.
Microelectron. Reliab.
Néstor Berbel, Raúl Fernández-García, Ignacio Gil, Binhong Li, Alexandre Boyer, Sonia Bendhia
2011 J jnl
Study of the impact of hot carrier injection to immunity of MOSFET to electromagnetic interferences.
Microelectron. Reliab.
Binhong Li, Néstor Berbel, Alexandre Boyer, Sonia Bendhia, Raúl Fernández-García
2009 J jnl
Modelling and experimental verification of the impact of negative bias temperature instability on CMOS inverter.
Microelectron. Reliab.
Néstor Berbel, Raúl Fernández-García, Ignacio Gil