Nobuyuki Sugii

24 papers Journal 16Unranked 8
YearRankTypeTitle / Venue / Authors
2017 — conf
A 910nW delta sigma modulator using 65nm SOTB technology for mixed signal IC of IoT applications.
ICICDT
Koichiro Ishibashi, Junya Kikuchi, Nobuyuki Sugii
2016 J jnl
Resistive switching properties of a thin SiO
Microelectron. Reliab.
M. S. Hadi, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Kuniyuki Kakushima
2015 — conf
0.39-V, 18.26-µW/MHz SOTB CMOS Microcontroller with embedded atom switch ROM.
COOL Chips
Toshitsugu Sakamoto, Yukihide Tsuji, Munehiro Tada, Hideki Makiyama, Takumi Hasegawa, Yoshiki Yamamoto, Shinobu Okanishi, Keiichi Maekawa, Naoki Banno, Makoto Miyamura, Koichiro Okamoto, Noriyuki Iguchi, Yasuhiro Ogasahara, Hidekazu Oda, Shiro Kamohara, Yasushi Yamagata, Nobuyuki Sugii, Hiromitsu Hada
2015 J jnl
A 27.6 µW 315 MHz low-complexity OOK receiver with on-off RF front-end.
IEICE Electron. Express
Minh-Thien Hoang, Nobuyuki Sugii, Koichiro Ishibashi
2015 J jnl
A Perpetuum Mobile 32bit CPU on 65nm SOTB CMOS Technology with Reverse-Body-Bias Assisted Sleep Mode.
IEICE Trans. Electron.
Koichiro Ishibashi, Nobuyuki Sugii, Shiro Kamohara, Kimiyoshi Usami, Hideharu Amano, Kazutoshi Kobayashi, Cong-Kha Pham
2015 J jnl
A Silicon-on-Thin-Buried-Oxide CMOS Microcontroller with Embedded Atom-Switch ROM.
IEEE Micro
Toshitsugu Sakamoto, Yukihide Tsuji, Munehiro Tada, Hideki Makiyama, Takumi Hasegawa, Yoshiki Yamamoto, Shinobu Okanishi, Keiichi Maekawa, Naoki Banno, Makoto Miyamura, Koichiro Okamoto, Noriyuki Iguchi, Hidekazu Oda, Shiro Kamohara, Yasushi Yamagata, Nobuyuki Sugii, Hiromitsu Hada, Yasuhiro Ogasahara
2015 — conf
Design of a low-power fixed-point 16-bit digital signal processor using 65nm SOTB process.
ICICDT
Duc-Hung Le, Nobuyuki Sugii, Shiro Kamohara, Xuan-Thuan Nguyen, Koichiro Ishibashi, Cong-Kha Pham
2015 J jnl
Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity.
Microelectron. Reliab.
Wei Li, Akito Sasaki, Hideyuki Oozu, Katsuaki Aoki, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai
2015 J jnl
Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes.
Microelectron. Reliab.
Wei Li, Akito Sasaki, Hideyuki Oozu, Katsuaki Aoki, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai
2015 — conf
Sub-μW standby power, <18 μW/DMIPS@25MHz MCU with embedded atom-switch programmable logic and ROM.
VLSIC
Yukihide Tsuji, Xu Bai, Makoto Miyamura, Toshitsugu Sakamoto, Munehiro Tada, Naoki Banno, Koichiro Okamoto, Noriyuki Iguchi, Nobuyuki Sugii, Hiromitsu Hada
2014 — conf
A Perpetuum Mobile 32bit CPU with 13.4pJ/cycle, 0.14µA sleep current using Reverse Body Bias Assisted 65nm SOTB CMOS technology.
COOL Chips
Koichiro Ishibashi, Nobuyuki Sugii, Kimiyoshi Usami, Hideharu Amano, Kazutoshi Kobayashi, Cong-Kha Pham, Hideki Makiyama, Yoshiki Yamamoto, Hirofumi Shinohara, Toshiaki Iwamatsu, Yasuo Yamaguchi, Hidekazu Oda, Takumi Hasegawa, Shinobu Okanishi, Hiroshi Yanagita, Shiro Kamohara, Masaru Kadoshima, Keiichi Maekawa, Tomohiro Yamashita, Duc-Hung Le, Takumu Yomogita, Masaru Kudo, Kuniaki Kitamori, Shuya Kondo, Yuuki Manzawa
2014 J jnl
A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability.
Microelectron. Reliab.
Yan Wu, Hiroyuki Hasegawa, Kuniyuki Kakushima, Kenji Ohmori, Takanobu Watanabe, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Yoshinori Kataoka, Kenji Natori, Keisaku Yamada, Hiroshi Iwai
2014 — conf
A perpetuum mobile 32bit CPU on 65nm SOTB CMOS technology with reverse-body-bias assisted sleep mode.
Hot Chips Symposium
Shiro Kamohara, Nobuyuki Sugii, Koichiro Ishibashi, Kimiyoshi Usami, Hideharu Amano, Kazutoshi Kobayashi, Cong-Kha Pham
2014 J jnl
Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement.
Microelectron. Reliab.
Chunmeng Dou, Tomoya Shoji, Kazuhiro Nakajima, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai
2013 — conf
Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT.
ESSDERC
Takamasa Kawanago, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai
2012 — conf
(100)- and (110)-oriented nMOSFETs with highly scaled EOT in La-silicate/Si interface for multi-gate architecture.
ESSDERC
Takamasa Kawanago, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kazuo Tsutsui, Kenji Natori, Takeo Hattori, Hiroshi Iwai
2012 J jnl
Oxide and interface trap densities estimation in ultrathin W/La
Microelectron. Reliab.
M. Mamatrishat, T. Kubota, T. Seki, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai
2012 J jnl
Resistive switching behavior of a CeO
Microelectron. Reliab.
Chunmeng Dou, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai
2011 J jnl
Effects of La
Microelectron. Reliab.
D. Zade, Soshi Sato, Kuniyuki Kakushima, A. Srivastava, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Chandan Kumar Sarkar, Hiroshi Iwai
2010 J jnl
Advantage of further scaling in gate dielectrics below 0.5 nm of equivalent oxide thickness with La
Microelectron. Reliab.
Kuniyuki Kakushima, Kiichi Tachi, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai
2010 J jnl
SrO capping effect for La
Microelectron. Reliab.
Kuniyuki Kakushima, K. Okamoto, T. Koyanagi, M. Kouda, Kiichi Tachi, Takamasa Kawanago, J. Song, Parhat Ahmet, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai
2008 J jnl
Electrical characteristics of MOSFETs with La
Microelectron. Reliab.
Parhat Ahmet, Kentaro Nakagawa, Kuniyuki Kakushima, Hiroshi Nohira, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai
2007 J jnl
Carrier separation and Vth measurements of W-La
IEICE Electron. Express
Joel Molina Reyes, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugii, Takeo Hattori, Hiroshi Iwai
2006 J jnl
Effective mobility and interface-state density of La
IEICE Electron. Express
Jin-Aun Ng, Nobuyuki Sugii, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Takeo Hattori, Hiroshi Iwai