Nicolas Nolhier

18 papers Journal 18
YearRankTypeTitle / Venue / Authors
2021 J jnl
Closed-Form Expressions of Electric and Magnetic Near-Fields for the Calibration of Near-Field Probes.
IEEE Trans. Instrum. Meas.
Alexandre Boyer, Nicolas Nolhier, Fabrice Caignet, Sonia Ben Dhia
2017 J jnl
Prediction of LIN communication robustness against EFT events using dedicated failure models.
Microelectron. Reliab.
Frédéric Escudié, Fabrice Caignet, Nicolas Nolhier, Marise Bafleur
2016 J jnl
Impact of non-linear capacitances on transient waveforms during system level ESD stress.
Microelectron. Reliab.
Frédéric Escudié, Fabrice Caignet, Nicolas Nolhier, Marise Bafleur
2015 J jnl
20 GHz on-chip measurement of ESD waveform for system level analysis.
Microelectron. Reliab.
Fabrice Caignet, Nicolas Nolhier, Marise Bafleur, A. Wang, Nicolas Mauran
2015 J jnl
Editorial.
Microelectron. Reliab.
Marise Bafleur, Philippe Perdu, François Marc, Hélène Frémont, Nicolas Nolhier
2014 J jnl
Reliability of ESD protection devices designed in a 3D technology.
Microelectron. Reliab.
Bertrand Courivaud, Nicolas Nolhier, Gilles Ferru, Marise Bafleur, Fabrice Caignet
2013 J jnl
Building-up of system level ESD modeling: Impact of a decoupling capacitance on ESD propagation.
Microelectron. Reliab.
Nicolas Monnereau, Fabrice Caignet, David Trémouilles, Nicolas Nolhier, Marise Bafleur
2013 J jnl
On-chip measurement to analyze failure mechanisms of ICs under system level ESD stress.
Microelectron. Reliab.
Fabrice Caignet, Nicolas Nolhier, Marise Bafleur, A. Wang, Nicolas Mauran
2012 J jnl
An Accelerated Stress Test Method for Electrostatically Driven MEMS Devices.
IEEE Trans. Instrum. Meas.
Jinyu Jason Ruan, Nicolas Monnereau, David Trémouilles, Nicolas Mauran, Fabio Coccetti, Nicolas Nolhier, Robert Plana
2009 J jnl
Accelerated lifetime test of RF-MEMS switches under ESD stress.
Microelectron. Reliab.
Jinyu Jason Ruan, Nicolas Nolhier, George J. Papaioannou, David Trémouilles, Vincent Puyal, C. Villeneuve, T. Idda, Fabio Coccetti, Robert Plana
2008 J jnl
ESD failure signature in capacitive RF MEMS switches.
Microelectron. Reliab.
Jinyu Jason Ruan, George J. Papaioannou, Nicolas Nolhier, Nicolas Mauran, Marise Bafleur, Fabio Coccetti, Robert Plana
2007 J jnl
Electrostatic discharge failure analysis of capacitive RF MEMS switches.
Microelectron. Reliab.
Jinyu Jason Ruan, Nicolas Nolhier, Marise Bafleur, Laurent Bary, Fabio Coccetti, T. Lisec, Robert Plana
2005 J jnl
Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure.
Microelectron. Reliab.
Nicolas Guitard, Fabien Essely, David Trémouilles, Marise Bafleur, Nicolas Nolhier, Philippe Perdu, André Touboul, Vincent Pouget, Dean Lewis
2004 J jnl
Latch-up ring design guidelines to improve electrostatic discharge (ESD) protection scheme efficiency.
IEEE J. Solid State Circuits
David Trémouilles, Marise Bafleur, Géraldine Bertrand, Nicolas Nolhier, Nicolas Mauran, Lionel Lescouzères
2004 J jnl
Low Frequency Noise Measurements for ESD Latent Defect Detection in High Reliability Applications.
Microelectron. Reliab.
Nicolas Guitard, David Trémouilles, Marise Bafleur, Laurent Escotte, Laurent Bary, Philippe Perdu, Gérard Sarrabayrouse, Nicolas Nolhier, Roberto Reyna-Rojas
2003 J jnl
Determination of the ESD Failure Cause Through its Signature.
Microelectron. Reliab.
M. Zecri, P. Besse, Philippe Givelin, M. Nayrolles, Marise Bafleur, Nicolas Nolhier
2001 J jnl
Analysis and compact modeling of a vertical grounded-base n-p-n bipolar transistor used as ESD protection in a smart power technology.
IEEE J. Solid State Circuits
Géraldine Bertrand, Christelle Delage, Marise Bafleur, Nicolas Nolhier, Jean-Marie Dorkel, Quang Nguyen, Nicolas Mauran, David Trémouilles, Philippe Perdu
1999 J jnl
The mirrored lateral SCR (MILSCR) as an ESD protection structure: design and optimization using 2-D device simulation.
IEEE J. Solid State Circuits
Christelle Delage, Nicolas Nolhier, Marise Bafleur, Jean-Marie Dorkel, Jo Hamid, Philippe Givelin, Jacques Lin-Kwang