Nathalie Labat

36 papers Journal 33Unranked 3
YearRankTypeTitle / Venue / Authors
2023 — conf
Thermal and statistical analysis of various AlN/GaN HEMT geometries for millimeter Wave applications.
IRPS
N. Said, Kathia Harrouche, Farid Medjdoub, Nathalie Labat, Jean-Guy Tartarin, Nathalie Malbert
2018 — conf
Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN high electron mobility transistors.
IRPS
Kalparupa Mukherjee, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat
2017 J jnl
Proceedings of the 28th European Symposium on the reliability of electron devices, failure physics and analysis.
Microelectron. Reliab.
Nathalie Labat, François Marc, Hélène Frémont, Marise Bafleur
2017 J jnl
TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices.
Microelectron. Reliab.
Kalparupa Mukherjee, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat
2016 J jnl
Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress.
Microelectron. Reliab.
H. Lakhdhar, Nathalie Labat, Arnaud Curutchet, Nicolas Defrance, Marie Lesecq, Jean-Claude de Jaeger, Nathalie Malbert
2015 J jnl
Correlation between forward-reverse low-frequency noise and atypical I-V signatures in 980 nm high-power laser diodes.
Microelectron. Reliab.
Pamela Del Vecchio, Arnaud Curutchet, Yannick Deshayes, M. Bettiati, F. Laruelle, Nathalie Labat, Laurent Béchou
2015 J jnl
Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs.
Microelectron. Reliab.
M. Rzin, Nathalie Labat, Nathalie Malbert, Arnaud Curutchet, Laurent Brunel, Benoit Lambert
2013 J jnl
Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress.
Microelectron. Reliab.
Laurent Brunel, Benoit Lambert, P. Mezenge, J. Bataille, D. Floriot, Jan Grünenpütt, Hervé Blanck, D. Carisetti, Y. Gourdel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat
2013 J jnl
Editorial.
Microelectron. Reliab.
Nathalie Labat, François Marc
2013 J jnl
Failure analysis of GaAs microwave devices with plastic encapsulation by electro-optical techniques.
Microelectron. Reliab.
W. Ben Naceur, Nathalie Malbert, Nathalie Labat, Hélène Frémont, D. Carisetti, J. C. Clement, J. L. Muraro, Barbara Bonnet
2013 J jnl
Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements.
Microelectron. Reliab.
S. Karboyan, Jean-Guy Tartarin, M. Rzin, Laurent Brunel, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, D. Carisetti, Benoit Lambert, M. Mermoux, E. Romain-Latu, F. Thomas, C. Bouexière, C. Moreau
2012 J jnl
Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test.
Microelectron. Reliab.
Benoit Lambert, Nathalie Labat, Dominique Carisetti, Serge Karboyan, Jean-Guy Tartarin, Jim Thorpe, Laurent Brunel, Arnaud Curutchet, Nathalie Malbert, Eddy Latu-Romain, Michel Mermoux
2012 — conf
Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements.
ESSDERC
Laurent Brunel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat, Benoit Lambert
2011 J jnl
Editorial.
Microelectron. Reliab.
Nathalie Labat, François Marc
2011 J jnl
Experimental power cycling on insulated TRIAC package: Reliability interpretation thanks to an innovative failure analysis flow.
Microelectron. Reliab.
A. Aubert, Sébastien Jacques, S. Pétremont, Nathalie Labat, Hélène Frémont
2011 J jnl
Reliability of submicron InGaAs/InP DHBT under thermal and electrical stresses.
Microelectron. Reliab.
G. A. Koné, Brice Grandchamp, C. Hainaut, François Marc, Cristell Maneux, Nathalie Labat, Thomas Zimmer, Virginie Nodjiadjim, Muriel Riet, Jean Godin
2010 J jnl
Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations.
Microelectron. Reliab.
Mustapha Faqir, Mohsine Bouya, Nathalie Malbert, Nathalie Labat, D. Carisetti, Benoit Lambert, Giovanni Verzellesi, Fausto Fantini
2010 J jnl
Failure analysis case study on a Cu/low-k technology in package: New front-side approach using laser and plasma de-processing.
Microelectron. Reliab.
A. Aubert, J. P. Rebrasse, Lionel Dantas de Morais, Nathalie Labat, Hélène Frémont
2010 J jnl
Preliminary results of storage accelerated aging test on InP/InGaAs DHBT.
Microelectron. Reliab.
G. A. Koné, Brice Grandchamp, C. Hainaut, François Marc, Cristell Maneux, Nathalie Labat, Thomas Zimmer, Virginie Nodjiadjim, Jean Godin
2009 J jnl
Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs.
Microelectron. Reliab.
Nathalie Malbert, Nathalie Labat, Arnaud Curutchet, C. Sury, V. Hoel, J.-C. de Jaeger, Nicolas Defrance, Y. Douvry, Christian Dua, Mourad Oualli, C. Bru-Chevallier, Jean-Marie Bluet, W. Chikhaoui
2009 J jnl
Editorial.
Microelectron. Reliab.
Dean Lewis, Nathalie Labat
2008 J jnl
Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques.
Microelectron. Reliab.
Mohsine Bouya, Nathalie Malbert, Nathalie Labat, D. Carisetti, Philippe Perdu, J. C. Clement, Benoit Lambert, M. Bonnet
2007 J jnl
Characterization and analysis of trap-related effects in AlGaN-GaN HEMTs.
Microelectron. Reliab.
Mustapha Faqir, Giovanni Verzellesi, Fausto Fantini, Francesca Danesin, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni, Anna Cavallini, Antonio Castaldini, Nathalie Labat, André Touboul, Christian Dua
2007 J jnl
Editorial.
Microelectron. Reliab.
Nathalie Labat, André Touboul
2007 J jnl
Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC.
Microelectron. Reliab.
Mohsine Bouya, D. Carisetti, Nathalie Malbert, Nathalie Labat, Philippe Perdu, J. C. Clement, M. Bonnet, G. Pataut
2006 J jnl
AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements.
Microelectron. Reliab.
A. Sozza, Arnaud Curutchet, Christian Dua, Nathalie Malbert, Nathalie Labat, André Touboul
2005 J jnl
Editorial.
Microelectron. Reliab.
Nathalie Labat
2005 J jnl
Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions.
Microelectron. Reliab.
Naoufel Ismail, Nathalie Malbert, Nathalie Labat, André Touboul, Jean-Luc Muraro, F. Brasseau, D. Langrez
2004 J jnl
Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors.
Microelectron. Reliab.
Nathalie Labat, Nathalie Malbert, Cristell Maneux, André Touboul
2004 J jnl
On-wafer low frequency noise measurements of SiGe HBTs: Impact of technological improvements on 1/f noise.
Microelectron. Reliab.
Brice Grandchamp, Cristell Maneux, Nathalie Labat, André Touboul, Thomas Zimmer
2003 J jnl
1/f noise analysis of InP/InGaAs DHBTs submitted to bias and thermal stresses.
Microelectron. Reliab.
J. C. Martin, Cristell Maneux, Nathalie Labat, André Touboul, Muriel Riet, S. Blayac, M. Kahn, Jean Godin
2003 J jnl
Editorial.
Microelectron. Reliab.
Nathalie Labat, André Touboul
2003 J jnl
High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects.
Microelectron. Reliab.
Mohamed Belhaj, Cristell Maneux, Nathalie Labat, André Touboul, Philippe Bove
2003 J jnl
Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates.
Microelectron. Reliab.
Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, André Touboul, Christophe Gaquière, A. Minko, Michael J. Uren
2002 J jnl
Degradation mechanisms induced by thermal and bias stresses in InP HEMTs.
Microelectron. Reliab.
Nathalie Labat, Nathalie Malbert, Benoit Lambert, André Touboul, F. Garat, B. Proust
2001 J jnl
Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses.
Microelectron. Reliab.
Benoit Lambert, Nathalie Malbert, Nathalie Labat, Frédéric Verdier, André Touboul, P. Huguet, R. Bonnet, G. Pataut