Naoki Kasai

14 papers C 1Journal 9Unranked 4
YearRankTypeTitle / Venue / Authors
2014 — conf
10.5 A 90nm 20MHz fully nonvolatile microcontroller for standby-power-critical applications.
ISSCC
Noboru Sakimura, Yukihide Tsuji, Ryusuke Nebashi, Hiroaki Honjo, Ayuka Morioka, Kunihiko Ishihara, Keizo Kinoshita, Shunsuke Fukami, Sadahiko Miura, Naoki Kasai, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu, Tadahiko Sugibayashi
2014 C conf
A delay circuit with 4-terminal magnetic-random-access-memory device for power-efficient time- domain signal processing.
ISCAS
Ryusuke Nebashi, Noboru Sakimura, Hiroaki Honjo, Ayuka Morioka, Yukihide Tsuji, Kunihiko Ishihara, Keiichi Tokutome, Sadahiko Miura, Shunsuke Fukami, Keizo Kinoshita, Takahiro Hanyu, Tetsuo Endoh, Naoki Kasai, Hideo Ohno, Tadahiko Sugibayashi
2009 — conf
A 90nm 12ns 32Mb 2T1MTJ MRAM.
ISSCC
Ryusuke Nebashi, Noboru Sakimura, Hiroaki Honjo, Shinsaku Saito, Yuichi Ito, Sadahiko Miura, Yuko Kato, Kaoru Mori, Yasuaki Ozaki, Yosuke Kobayashi, Norikazu Ohshima, Keizo Kinoshita, Tetsuhiro Suzuki, Kiyokazu Nagahara, Nobuyuki Ishiwata, Katsumi Suemitsu, Shunsuke Fukami, Hiromitsu Hada, Tadahiko Sugibayashi, Naoki Kasai
2009 J jnl
Nonvolatile Magnetic Flip-Flop for Standby-Power-Free SoCs.
IEEE J. Solid State Circuits
Noboru Sakimura, Tadahiko Sugibayashi, Ryusuke Nebashi, Naoki Kasai
2009 J jnl
Shared Write-Selection Transistor Cell and Leakage-Replication Read Scheme for Large Capacity MRAM Macros.
IEICE Trans. Electron.
Ryusuke Nebashi, Noboru Sakimura, Tadahiko Sugibayashi, Naoki Kasai
2008 — conf
Nonvolatile Magnetic Flip-Flop for standby-power-free SoCs.
CICC
Noboru Sakimura, Tadahiko Sugibayashi, Ryusuke Nebashi, Naoki Kasai
2007 J jnl
A 16-Mb Toggle MRAM With Burst Modes.
IEEE J. Solid State Circuits
Tadahiko Sugibayashi, Noboru Sakimura, Takeshi Honda, Kiyokazu Nagahara, Kiyotaka Tsuji, Hideaki Numata, Sadahiko Miura, Ken-ichi Shimura, Yuko Kato, Shinsaku Saito, Yoshiyuki Fukumoto, Hiroaki Honjo, Tetsuhiro Suzuki, Katsumi Suemitsu, Tomonori Mukai, Kaoru Mori, Ryusuke Nebashi, Shunsuke Fukami, Norikazu Ohshima, Hiromitsu Hada, Nobuyuki Ishiwata, Naoki Kasai, Shuichi Tahara
2007 J jnl
MRAM Applications Using Unlimited Write Endurance.
IEICE Trans. Electron.
Tadahiko Sugibayashi, Takeshi Honda, Noboru Sakimura, Shuichi Tahara, Naoki Kasai
2007 J jnl
Writing Circuitry for Toggle MRAM to Screen Intermittent Failure Mode.
IEICE Trans. Electron.
Takeshi Honda, Noboru Sakimura, Tadahiko Sugibayashi, Naoki Kasai, Hiromitsu Hada, Shuichi Tahara
2005 J jnl
Gate-Last MISFET Structures and Process for Characterization of High-k and Metal Gate MISFETs.
IEICE Trans. Electron.
Takeo Matsuki, Kazuyoshi Torii, Takeshi Maeda, Yasushi Akasaka, Kiyoshi Hayashi, Naoki Kasai, Tsunetoshi Arikado
2005 J jnl
Special Section on Microelectronic Test Structures.
IEICE Trans. Electron.
Naoki Kasai
2001 — conf
FeRAM device and circuit technologies fully compatible with advanced CMOS.
CICC
Hideo Toyoshima, Sota Kobayashi, Junichi Yamada, Tohru Miwa, Hiroki Koike, Hidenori Takeuchi, Hidemitsu Mori, Naoki Kasai, Yukihiko Maejima, Nobuhira Tanabe, Toru Tatsumi, Hiromitsu Hada
1993 J jnl
A 30-ns 256-Mb DRAM with a multidivided array structure.
IEEE J. Solid State Circuits
Tadahiko Sugibayashi, Toshio Takeshima, Isao Naritake, Tatsuya Matano, Hiroshi Takada, Yoshiharu Aimoto, Koichiro Furuta, Mamoru Fujita, Takanori Saeki, Hiroshi Sugawara, Tatsunori Murotani, Naoki Kasai, Kentaro Shibahara, Ken Nakajima, Hiromitsu Hada, Takehiko Hamada, Naoaki Aizaki, Takemitsu Kunio, Eiichiro Kakehashi, Katsuhiro Masumori, Takaho Tanigawa
1992 J jnl
A 30-ns 64-Mb DRAM with built-in self-test and self-repair function.
IEEE J. Solid State Circuits
Akira Tanabe, Toshio Takeshima, Hiroki Koike, Yoshiharu Aimoto, Masahide Takada, Toshiyuki Ishijima, Naoki Kasai, Hiromitsu Hada, Kentaro Shibahara, Takemitsu Kunio, Takaho Tanigawa, Takanori Saeki, Masato Sakao, Hidenobu Miyamoto, Hiroshi Nozue, Shuichi Ohya, Tatsunori Murotani, Kuniaki Koyama, Takashi Okuda