Muhammad Ashraful Alam

49 papers A* 2A 3B 1C 1Misc 1Journal 21Unranked 19
YearRankTypeTitle / Venue / Authors
2025 — conf
Asymmetric Reliability and Universality of Defect Formation in Oxide-Gated Ultra-Thin In2O3Vertical FETs for Monolithic 3-D Integration.
IRPS
Chun-An Shih, Mir Md Fahimul Islam, Sumi Lee, Peide D. Ye, Muhammad Ashraful Alam
2025 — conf
Demystifying the Use of IC Plastic packages for Space Applications.
IRPS
Md. Asaduz Zaman Mamun, Greta Terzariol, Luke Fortner, Amar Mavinkurve, Muhammad Ashraful Alam
2024 A* conf
MetaPhysiCa: Improving OOD Robustness in Physics-informed Machine Learning.
ICLR
S. Chandra Mouli, Muhammad Ashraful Alam, Bruno Ribeiro
2024 Misc conf
On the Robustness of Variational Quantum Classifier Against "Label Flipping Attacks" in Federated Learning for Semiconductor Manufacturing.
QCE
Amandeep Singh Bhatia, Sabre Kais, Muhammad Ashraful Alam
2024 J jnl
Physics-guided machine learning predicts the planet-scale performance of solar farms with sparse, heterogeneous, public data.
CoRR
Jabir Bin Jahangir, Muhammad Ashraful Alam
2024 — conf
Robustness of Quantum Federated Learning (QFL) Against "Label Flipping Attacks" for Lithography Hotspot Detection in Semiconductor Manufacturing.
IRPS
Amandeep Singh Bhatia, Sabre Kais, Muhammad Ashraful Alam
2024 — conf
Validating Supply Chain against Recycled COTS ICs using I/O Pad Transistors: A Zero-Area Intrinsic Odometer Approach.
IRPS
Md. Asaduz Zaman Mamun, Nathan J. Conrad, Saeed Mohammadi, Muhammad Ashraful Alam
2023 — conf
Cross-coupled Self-Heating and Consequent Reliability Issues in GaN-Si Hetero-integration: Thermal Keep-Out-Zone Quantified.
IRPS
Sruthi M. P, Md. Asaduz Zaman Mamun, Deleep R. Nair, Anjan Chakravorty, Nandita DasGupta, Amitava Dasgupta, Muhammad Ashraful Alam
2023 J jnl
MetaPhysiCa: OOD Robustness in Physics-informed Machine Learning.
CoRR
S. Chandra Mouli, Muhammad Ashraful Alam, Bruno Ribeiro
2023 J jnl
Reliability of HfO
Proc. IEEE
Nicolò Zagni, Francesco Maria Puglisi, Paolo Pavan, Muhammad Ashraful Alam
2023 — conf
Transient Leakage Current as a Non-destructive Probe of Wire-bond Electrochemical Failures.
IRPS
Md. Asaduz Zaman Mamun, Amar Mavinkurve, Michiel van Soestbergen, Muhammad Ashraful Alam
2023 — conf
Ultrahigh Bias Stability of ALD In2O3 FETs Enabled by High Temperature O2 Annealing.
VLSI Technology and Circuits
Zhuocheng Zhang, Zehao Lin, Chang Niu, Mengwei Si, Muhammad Ashraful Alam, Peide D. Ye
2022 J jnl
A Critical Analysis of Bifacial Solar Farm Configurations: Theory and Experiments.
IEEE Access
Jabir Bin Jahangir, Md. Al-Mahmud, Md. Shahadat Sarker Shakir, Anisul Haque, Muhammad Ashraful Alam, M. Ryyan Khan
2022 — conf
A Critical Examination of the TCAD Modeling of Hot Carrier Degradation for LDMOS Transistors.
IRPS
Bikram Kishore Mahajan, Yen-Pu Chen, Muhammad Ashraful Alam, Dhanoop Varghese, Srikanth Krishnan, Vijay Reddy
2022 — conf
Correlated Effects of Radiation and Hot Carrier Degradation on the Performance of LDMOS Transistors.
IRPS
Bikram Kishore Mahajan, Yen-Pu Chen, Ulisses Alberto Heredia Rivera, Rahim Rahimi, Muhammad Ashraful Alam
2022 — book
Principles of Solar Cells - Connecting Perspectives on Device, System, Reliability, and Data Science
Principles of Solar Cells
Muhammad Ashraful Alam, M. Ryyan Khan
2022 — conf
Reduced Relative Humidity (RH) Enhances the Corrosion-Limited Lifetime of Self-Heated IC: Peck's equation Generalized.
IRPS
Md. Asaduz Zaman Mamun, Muhammad Ashraful Alam
2022 J jnl
Steady-State and Transient Performance of Ion-Sensitive Electrodes Suitable for Wearable and Implantable Electro-Chemical Sensing.
IEEE Trans. Biomed. Eng.
Xin Jin, Ajanta Saha, Hongjie Jiang, Muhammed Ramazan Oduncu, Qingyu Yang, Sotoudeh Sedaghat, Kerry Maize, Jan P. Allebach, Ali Shakouri, Nicholas Glassmaker, Alexander Wei, Rahim Rahimi, Muhammad Ashraful Alam
2022 J jnl
Techno Economic Modeling for Agrivoltaics: Can Agrivoltaics be more profitable than Ground mounted PV?
CoRR
Habeel Alam, Muhammad Ashraful Alam, Nauman Zafar Butt
2022 J jnl
Training a Quantum Annealing Based Restricted Boltzmann Machine on Cybersecurity Data.
IEEE Trans. Emerg. Top. Comput. Intell.
Vivek Dixit, Raja Selvarajan, Tamer Aldwairi, Yaroslav Koshka, Mark A. Novotny, Travis S. Humble, Muhammad Ashraful Alam, Sabre Kais
2021 — conf
Quantifying Region-Specific Hot Carrier Degradation in LDMOS Transistors Using a Novel Charge Pumping Technique.
IRPS
Bikram Kishore Mahajan, Yen-Pu Chen, Dhanoop Varghese, Vijay Reddy, Srikanth Krishnan, Muhammad Ashraful Alam
2020 — conf
A Novel 'I-V Spectroscopy' Technique to Deconvolve Threshold Voltage and Mobility Degradation in LDMOS Transistors.
IRPS
Yen-Pu Chen, Bikram Kishore Mahajan, Dhanoop Varghese, Srikanth Krishnan, Vijay Reddy, Muhammad Ashraful Alam
2020 J jnl
Generalized Modeling Framework of Metal Oxide-Based Non-Enzymatic Glucose Sensors: Concepts, Methods, and Challenges.
IEEE Trans. Biomed. Eng.
Xin Jin, Muhammad Ashraful Alam
2020 J jnl
Resilient Cyberphysical Systems and their Application Drivers: A Technology Roadmap.
CoRR
Somali Chaterji, Parinaz Naghizadeh, Muhammad Ashraful Alam, Saurabh Bagchi, Mung Chiang, David Corman, Brian J. Henz, Suman Jana, Na Li, Shaoshuai Mou, Meeko Oishi, Chunyi Peng, Tiark Rompf, Ashutosh Sabharwal, Shreyas Sundaram, James Weimer, Jennifer Weller
2020 J jnl
Training a quantum annealing based restricted Boltzmann machine on cybersecurity data.
CoRR
Vivek Dixit, Raja Selvarajan, Muhammad Ashraful Alam, Travis S. Humble, Sabre Kais
2020 J jnl
Training and Classification using a Restricted Boltzmann Machine on the D-Wave 2000Q.
CoRR
Vivek Dixit, Raja Selvarajan, Muhammad Ashraful Alam, Travis S. Humble, Sabre Kais
2019 — conf
An Analytical Transient Joule Heating Model for an Interconnect in a Modern IC: Material Selection (Cu, Co, Ru) and Cooling Strategies.
IRPS
Woojin Ahn, Yen-Pu Chen, Muhammad Ashraful Alam
2018 — conf
BVDSS (drain to source breakdown voltage) instability in shielded gate trench power MOSFETs.
IRPS
Jifa Hao, Amartya Ghosh, Mark Rinehimer, Joe Yedinak, Muhammad Ashraful Alam
2018 — conf
High voltage time-dependent dielectric breakdown in stacked intermetal dielectrics.
IRPS
Sanghoon Shin, Yen-Pu Chen, Woojin Ahn, Honglin Guo, Byron Williams, Jeff West, Tom Bonifield, Dhanoop Varghese, Srikanth Krishnan, Muhammad Ashraful Alam
2018 J jnl
Integrated modeling of Self-heating of confined geometry (FinFET, NWFET, and NSHFET) transistors and its implications for the reliability of sub-20 nm modern integrated circuits.
Microelectron. Reliab.
Woojin Ahn, Sang Hoon Shin, Chunsheng Jiang, Hai Jiang, M. A. Wahab, Muhammad Ashraful Alam
2015 — conf
Characterization and reliability of III-V gate-all-around MOSFETs.
IRPS
Mengwei Si, Sanghoon Shin, Nathan J. Conrad, Jiangjiang Gu, Jingyun Zhang, Muhammad Ashraful Alam, Peide D. Ye
2015 J jnl
Editorial IEEE Access Special Section Editorial: Nanobiosensors.
IEEE Access
Muhammad Ashraful Alam, Oguz H. Elibol, Anisul Haque
2015 — conf
Physics-based compact models for insulated-gate field-effect biosensors, landau-transistors, and thin-film solar cells.
CICC
Muhammad Ashraful Alam, Piyush Dak, Muhammad A. Wahab, Xingshu Sun
2014 J jnl
OFF-state degradation and correlated gate dielectric breakdown in high voltage drain extended transistors: A review.
Microelectron. Reliab.
Dhanoop Varghese, V. Reddy, S. Krishnan, Muhammad Ashraful Alam
2011 J jnl
Computing Nice Projections of Convex Polyhedra.
Int. J. Comput. Geom. Appl.
Muhammad Ashraful Alam, Masud Hasan
2008 B conf
Computing Nice Projections of Convex Polyhedra.
WALCOM
Muhammad Ashraful Alam, Masud Hasan
2008 J jnl
Reliability- and process-variation aware design of integrated circuits.
Microelectron. Reliab.
Muhammad Ashraful Alam
2007 J jnl
A comprehensive model for PMOS NBTI degradation: Recent progress.
Microelectron. Reliab.
Muhammad Ashraful Alam, Haldun Kufluoglu, Dhanoop Varghese, S. Mahapatra
2007 A* conf
Characterization and Estimation of Circuit Reliability Degradation under NBTI using On-Line IDDQ Measurement.
DAC
Kunhyuk Kang, Keejong Kim, Ahmad E. Islam, Muhammad Ashraful Alam, Kaushik Roy
2007 A conf
Characterization of NBTI induced temporal performance degradation in nano-scale SRAM array using IDDQ.
ITC
Kunhyuk Kang, Muhammad Ashraful Alam, Kaushik Roy
2007 A conf
Estimation of statistical variation in temporal NBTI degradation and its impact on lifetime circuit performance.
ICCAD
Kunhyuk Kang, Sang Phill Park, Kaushik Roy, Muhammad Ashraful Alam
2007 J jnl
Impact of Negative-Bias Temperature Instability in Nanoscale SRAM Array: Modeling and Analysis.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Kunhyuk Kang, Haldun Kufluoglu, Kaushik Roy, Muhammad Ashraful Alam
2007 J jnl
Negative Bias Temperature Instability: Estimation and Design for Improved Reliability of Nanoscale Circuits.
IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.
Bipul Chandra Paul, Kunhyuk Kang, Haldun Kufluoglu, Muhammad Ashraful Alam, Kaushik Roy
2006 C conf
Efficient Transistor-Level Sizing Technique under Temporal Performance Degradation due to NBTI.
ICCD
Kunhyuk Kang, Haldun Kufluoglu, Muhammad Ashraful Alam, Kaushik Roy
2006 A conf
Temporal performance degradation under NBTI: estimation and design for improved reliability of nanoscale circuits.
DATE
Bipul Chandra Paul, Kunhyuk Kang, Haldun Kufluoglu, Muhammad Ashraful Alam, Kaushik Roy
2005 J jnl
A comprehensive model of PMOS NBTI degradation.
Microelectron. Reliab.
Muhammad Ashraful Alam, S. Mahapatra
2005 J jnl
Gate dielectric breakdown in the time-scale of ESD events.
Microelectron. Reliab.
Bonnie E. Weir, Che-Choi Leung, Paul J. Silverman, Muhammad Ashraful Alam
2004 — conf
Software Security in Bangladesh with .NET Framework: A Roadmap.
ITCC (2)
Muhammad Ashraful Alam
2001 — conf
A new analytical model for high frequency MOSFET noise.
CICC
Simona Donati Guerrieri, Fabrizio Bonani, Giovanni Ghione, Muhammad Ashraful Alam