Morteza Gholipour

27 papers A 2Journal 20Unranked 5

Year	Rank	Type	Title / Venue / Authors
2025	J	`jnl`	Efficient fully parallel convolutional neural network architecture using 1-memristor and 1-transistor (1M1T). J. Supercomput. Ahmadreza Yosefzadeh Chari, Morteza Gholipour, Mohammadreza Hassanzadeh
2025	J	`jnl`	Transition metal dichalcogenide FET-based dynamic random-access memory. Int. J. Circuit Theory Appl. Mahdiye Raoofi, Morteza Gholipour
2022	J	`jnl`	A Reliable Low Standby Power 10T SRAM Cell With Expanded Static Noise Margins. IEEE Trans. Circuits Syst. I Regul. Pap. Erfan Abbasian, Farzaneh Izadinasab, Morteza Gholipour
2022	J	`jnl`	A Schmitt-Trigger-Based Low-Voltage 11 T SRAM Cell for Low-Leakage in 7-nm FinFET Technology. Circuits Syst. Signal Process. Erfan Abbasian, Elangovan Mani, Morteza Gholipour, Mehrzad Karamimanesh, Mohd Sahid, Adil Zaidi
2022	J	`jnl`	A low-leakage single-bitline 9T SRAM cell with read-disturbance removal and high writability for low-power biomedical applications. Int. J. Circuit Theory Appl. Erfan Abbasian, Morteza Gholipour
2022	J	`jnl`	Design of a Highly Stable and Robust 10T SRAM Cell for Low-Power Portable Applications. Circuits Syst. Signal Process. Erfan Abbasian, Morteza Gholipour
2022	J	`jnl`	Enhanced overloaded code division multiple access for network on chip. IET Comput. Digit. Tech. Behnam Vakili, Morteza Gholipour
2022	J	`jnl`	Improved read/write assist mechanism for 10-transistor static random access memory cell. Int. J. Circuit Theory Appl. Erfan Abbasian, Morteza Gholipour
2022	J	`jnl`	Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM. Microelectron. J. Erfan Abbasian, Shilpi Birla, Morteza Gholipour
2021	J	`jnl`	Half-select disturb-free single-ended 9-transistor SRAM cell with bit-interleaving scheme in TMDFET technology. Microelectron. J. Farzaneh Izadinasab, Morteza Gholipour
2021	J	`jnl`	Performance evaluation of GNRFET and TMDFET devices in static random access memory cells design. Int. J. Circuit Theory Appl. Erfan Abbasian, Morteza Gholipour, Farzaneh Izadinasab
2021	J	`jnl`	Single-ended half-select disturb-free 11T static random access memory cell for reliable and low power applications. Int. J. Circuit Theory Appl. Erfan Abbasian, Morteza Gholipour
2020	J	`jnl`	Design space exploration of low-power flip-flops in FinFET technology. Integr. Ehsan Mahmoodi, Morteza Gholipour
2019	J	`jnl`	Nanoscale field effect diode (FED) with improved speed and IET Circuits Devices Syst. Arash Rezaei, Bahram Azizollah-Ganji, Morteza Gholipour
2018	J	`jnl`	Compact Modeling to Device- and Circuit-Level Evaluation of Flexible TMD Field-Effect Transistors. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. Morteza Gholipour, Ying-Yu Chen, Deming Chen
2016	J	`jnl`	Analytical SPICE-Compatible Model of Schottky-Barrier-Type GNRFETs With Performance Analysis. IEEE Trans. Very Large Scale Integr. Syst. Morteza Gholipour, Ying-Yu Chen, Amit Sangai, Nasser Masoumi, Deming Chen
2016	—	`conf`	Flexible transition metal dichalcogenide field-effect transistors: A circuit-level simulation study of delay and power under bending, process variation, and scaling. ASP-DAC Ying-Yu Chen, Morteza Gholipour, Deming Chen
2014	J	`jnl`	Graphene nanoribbon crossbar architecture for low power and dense circuit implementations. Microelectron. J. Morteza Gholipour, Nasser Masoumi
2014	A	`conf`	Highly accurate SPICE-compatible modeling for single- and double-gate GNRFETs with studies on technology scaling. DATE Morteza Gholipour, Ying-Yu Chen, Amit Sangai, Deming Chen
2013	J	`jnl`	Design investigation of nanoelectronic circuits using crossbar-based nanoarchitectures. Microelectron. J. Morteza Gholipour, Nasser Masoumi
2013	A	`conf`	Graphene nano-ribbon field-effect transistors as future low-power devices. ISLPED Ying-Yu Chen, Amit Sangai, Morteza Gholipour, Deming Chen
2013	—	`conf`	Schottky-barrier-type Graphene Nano-Ribbon Field-Effect Transistors: A study on compact modeling, process variation, and circuit performance. NANOARCH Ying-Yu Chen, Amit Sangai, Morteza Gholipour, Deming Chen
2012	J	`jnl`	Efficient inclusive analytical model for delay estimation of multi-walled carbon nanotube interconnects. IET Circuits Devices Syst. Morteza Gholipour, Nasser Masoumi
2011	—	`conf`	A comparative study of nanowire crossbar and MOSFET logic implementations. EUROCON Morteza Gholipour, Nasser Masoumi
2011	—	`conf`	Design and Implementation of Lifting Based Integer Wavelet Transform for Image Compression Applications. DICTAP (1) Morteza Gholipour
2006	J	`jnl`	Comparative study of asynchronous pipeline design methods. IEICE Electron. Express Kambiz Shojaee, Morteza Gholipour, Ali Afzali-Kusha, Mehrdad Nourani
2005	—	`conf`	An efficient model for performance analysis of asynchronous pipeline design methods. ISCAS (5) Morteza Gholipour, Hamid Shojaee, Ali Afzali-Kusha, Ahmad Khademzadeh, Mehrdad Nourani