Mohamed Hussein Eissa

18 papers C 2Journal 5Unranked 11

Year	Rank	Type	Title / Venue / Authors
2023	—	`conf`	A Ka-Band VCO Chip with Integrated Dividers Using 1.5 V Supply in 130-nm SiGe BiCMOS Technology for Low-Power Radar Sensors. BCICTS Batuhan Sutbas, Mohamed Hussein Eissa, Gerhard Kahmen
2023	—	`conf`	Vector Modulator Based Leakage Cancellation Technique for CW Radar Transceiver Frontends. RWS Batuhan Sutbas, Mohamed Hussein Eissa, Gerhard Kahmen
2021	—	`conf`	A Broadband 110-170 GHz Frequency Multiplier by 4 Chain with 8 dBm Output Power in 130 nm BiCMOS. ESSCIRC Alper Karakuzulu, Mohamed Hussein Eissa, Dietmar Kissinger, Andrea Malignaggi
2021	J	`jnl`	Dual-Band Transmitter and Receiver With Bowtie-Antenna in 0.13 μm SiGe BiCMOS for Gas Spectroscopy at 222 - 270 GHz. IEEE Access Klaus Schmalz, Nick Rothbart, Alexandra Glück, Mohamed Hussein Eissa, Thomas Mausolf, Esref Turkmen, Selahattin Berk Yilmaz, Heinz-Wilhelm Hübers
2021	J	`jnl`	Low-complexity subspace method for I/Q imbalance estimation in low-IF receivers with unknown fading. Trans. Emerg. Telecommun. Technol. Ahmad Gomaa, Ayman Elezabi, Mohamed Hussein Eissa
2021	—	`conf`	OFDM Transmission over a Short-Range 240 GHz Wireless Link: Performance Analysis. WSA Nebojsa Maletic, Mohamed Hussein Eissa, Lukasz Lopacinski, Vladica Sark, Jesús Gutiérrez, Eckhard Grass
2021	—	`conf`	Vector Modulator Phase Shifters in 130-nm SiGe BiCMOS Technology for 5G Applications. RWS Aniello Franzese, Mohamed Hussein Eissa, Dietmar Kissinger, Andrea Malignaggi
2020	—	`conf`	A V-band Bidirectional Amplifier-Module for Hybrid Phased-Array Systems in BiCMOS Technology. RWS Ahmed Gadallah, Mohamed Hussein Eissa, Dietmar Kissinger, Andrea Malignaggi
2020	—	`conf`	Ultra Broadband Low-Power 70 GHz Active Balun in 130-nm SiGe BiCMOS. BCICTS Aniello Franzese, Mohamed Hussein Eissa, Thomas Mausolf, Dietmar Kissinger, Renato Negra, Andrea Malignaggi
2019	—	`conf`	A 13.5dBm Fully Integrated 200-to-255GHz Power Amplifier with a 4-Way Power Combiner in SiGe: C BiCMOS. ISSCC Mohamed Hussein Eissa, Dietmar Kissinger
2019	J	`jnl`	Data Link Layer Processor for 100 Gbps Terahertz Wireless Communications in 28 nm CMOS Technology. IEEE Access Lukasz Lopacinski, Miroslav Marinkovic, Goran Panic, Mohamed Hussein Eissa, Alireza Hasani, Karthik KrishneGowda, Rolf Kraemer
2019	C	`conf`	Modular Data Link Layer Processing for THz communication. DDECS Lukasz Lopacinski, Mohamed Hussein Eissa, Goran Panic, Alireza Hasani, Rolf Kraemer
2018	C	`conf`	A 30 GHz Power Detector based Reflectometer in 130nm SiGe BiCMOS for Dielectric Spectroscopy. ISCAS Rahul Kumar Yadav, Jan Wessel, Mohamed Hussein Eissa, Farabi Ibne Jamal, Maciej Kucharski, Dietmar Kissinger
2018	J	`jnl`	D-Band Frequency Quadruplers in BiCMOS Technology. IEEE J. Solid State Circuits Maciej Kucharski, Mohamed Hussein Eissa, Andrea Malignaggi, Defu Wang, Herman Jalli Ng, Dietmar Kissinger
2018	—	`conf`	Implementation of a Multi-Core Data Link Layer Processor for THz Communication. VTC Spring Lukasz Lopacinski, Mohamed Hussein Eissa, Goran Panic, Marcin Brzozowski, Alireza Hasani, Rolf Kraemer
2018	J	`jnl`	Wideband 240-GHz Transmitter and Receiver in BiCMOS Technology With 25-Gbit/s Data Rate. IEEE J. Solid State Circuits Mohamed Hussein Eissa, Andrea Malignaggi, Ruoyu Wang, Mohamed Elkhouly, Klaus Schmalz, Ahmet Cagri Ulusoy, Dietmar Kissinger
2017	—	`conf`	A low-power 190-255 GHz frequency quadrupler in SiGe BiCMOS technology for on-chip spectroscopic applications. RWS Farabi Ibne Jamal, Mohamed Hussein Eissa, Johannes Borngräber, Herman Jalli Ng, Dietmar Kissinger, Jan Wessel
2016	—	`conf`	A wideband monolithically integrated photonic receiver in 0.25-µm SiGe: C BiCMOS technology. ESSCIRC Mohamed Hussein Eissa, Ahmed Awny, Georg Winzer, Marcel Kroh, Stefan Lischke, Dieter Knoll, Lars Zimmermann, Dietmar Kissinger, Ahmet Cagri Ulusoy