Ming Qiao

18 papers Journal 14Unranked 4
YearRankTypeTitle / Venue / Authors
2026 J jnl
A novel divided RESURF technology with high-side zero-bias pinch-off JFET and its experiments.
Microelectron. J.
Zhenyan Liu, Teng Liu, Jian Xu, Shixiong Chong, Yuheng Yao, Yongyu Shi, Haoyu Li, Lihui Gu, Nailong He, Sen Zhang, Ming Qiao, Wentong Zhang, Zhaoji Li, Bo Zhang
2026 J jnl
A novel level-shifting technique with air-gap self-shielding structure for 700 V high-voltage gate driver ICs.
Microelectron. J.
Guoliang Yao, Ming Qiao, Dingxiang Ma, Bo Zhang
2026 J jnl
Enhanced total-ionizing-dose tolerance of transistors via process optimization in a 0.18μm BCD technology.
Microelectron. J.
Rubin Xie, Chaoyang Ge, Hong Peng, Qiang Yang, Xin Zhou, Bo Zhang, Ming Qiao
2025 J jnl
Development of a 65V low Ron,sp N-type LDMOS on 180 nm BCD platform.
Microelectron. J.
Qi Ding, Ning Ning, Jun Huang, Renxiong Li, Yu Wang, Yutuo Guo, Kunqin He, Yaxin Liu, Ziyi Zeng, Huaishan Wang, Juan Tang, Qiuyue Huo, Lulu Peng, Zhaoji Li, Bo Zhang, Ming Qiao
2025 — conf
R2A-TLS: Reflective Retrieval-Augmented Timeline Summarization with Causal-Semantic Integration.
EMNLP (Findings)
Chenlong Bao, Shijie Li, Minghao Hu, Ming Qiao, Bin Zhang, Jin-Tao Tang, Shasha Li, Ting Wang
2025 J jnl
Research on radiation hardening of oscillator circuits based on LDMOS devices.
Microelectron. J.
Xiaohui Li, Ming Qiao, Jitao Li, Zhaoji Li, Qiang Wang, Hongjun Wang, Bo Zhang
2024 J jnl
A novel SPICE model of shorted-anode lateral insulated-gate bipolar transistor.
Microelectron. J.
Yixun Jiang, Qingfeng Kong, Ming Qiao, Yin Guo, Yuxi Tang, Xinxin Liu, Sen Zhang, Bo Zhang
2023 J jnl
A physics-based compact model of shield gate trench MOSFET.
Microelectron. J.
Yixun Jiang, Ming Qiao, Yin Guo, Zuquan Zheng, Lijun Shen, Xinxin Liu, Sen Zhang, Zhaoji Li, Bo Zhang
2023 J jnl
An ultralow specific on-resistance bidirectional trench power MOSFET with RESURF stepped oxide.
Microelectron. J.
Dong Fang, Wenliang Liu, Ming Qiao, Xingrui Long, Zhao Qi, Bo Zhang
2022 J jnl
A low gate charge field-plate trench MOSFET with hollow split gate structure.
Microelectron. J.
Ming Qiao, Tao Ma, Shida Dong, Zhengkang Wang, Shuhao Zhang, Zhaoji Li, Bo Zhang
2022 J jnl
Split-gate trench metal-oxide-semiconductor field effect transistor with an inverted L-shaped source region.
Microelectron. J.
Dong Fang, Guang Yang, Ming Qiao, Kui Xiao, Xiangyu Yang, Zheng Bian, Bo Zhang
2022 — conf
Study on Single Event Burnout Effect for 18V LDMOS Based on 0.18µm Process Technology.
APCCAS
Langtao Chen, Xin Zhou, Ying Wang, Ying Kong, Rubin Xie, Ling Peng, Yantu Mo, Ming Qiao, Bo Zhang
2021 J jnl
Mechanisms and characteristics of a low-loss split gate trench MOSFET with shield layer.
Microelectron. J.
Zhengkang Wang, Ming Qiao, Zhaoji Li, Bo Zhang
2016 — conf
Geographical Situation Monitoring Applications Based on MiniSAR.
GRMSE (1)
Xuejing Shi, Gang Huang, Ming Qiao, Bingnan Wang
2015 — conf
Effect of field implantation on off- and on-state characteristics for thin layer SOI field P-channel LDMOS.
ASICON
Xin Zhou, Ming Qiao, Yang Li, Zhaoji Li, Bo Zhang
2014 J jnl
A review of HVI technology.
Microelectron. Reliab.
Ming Qiao, Xin Zhang, Shuai Wen, Bo Zhang, Zhaoji Li
2013 J jnl
ESD characterization of a 190V LIGBT SOI ESD power clamp structure for plasma display panel applications.
Microelectron. Reliab.
Lingli Jiang, Hang Fan, Ming Qiao, Bo Zhang, Zhaoji Li
2010 J jnl
Control system design and analysis of FRP pipe thread-grinding machine.
Int. J. Comput. Appl. Technol.
Jiazhong Xu, Ming Qiao, Xinying Wang