Milan Pesic

20 papers Unranked 19
YearRankTypeTitle / Venue / Authors
2025 — conf
Impact of Al-based Dipole Formation on Gate Stack Integrity and Reliability.
IRPS
Bruno Coppolelli, Davide Cornigli, Zheyuan Chen, Andrea Padovani, Sara Vecchi, Yanliu Dang, Luc Thomas, Luca Vandelli, Jianxin Lei, Naomi Yoshida, Renu Whig, Federico Nardi, Gaurav Thareja, Luca Larcher, Milan Pesic
2025 — conf
Investigation of the Impact of Hydrogen Defects on the VT shift in Back-Gate IGZO TFTs.
IRPS
Mohammad Fathi, Md Abdullah Al Mamun, Rodolfo A. Rodriguez-Davila, Shumiya Alam, Jongchan Kim, Tanvir Haider Pantha, Milan Pesic, Manuel Quevedo-Lopez, Kyeongjae Cho, Sourav Dutta, Chadwin D. Young
2025 — conf
Reliability and Integration Challenges Underlying New Material Introduction into Memory Technology (Invited).
IRPS
Milan Pesic
2024 — conf
Blocking Oxide Material Engineering to Improve Retention Loss in 3D NAND: a Modeling Process Optimization Study.
IRPS
Tommaso Rollo, Hansel Lo, Luca Larcher, Christopher Olsen, Milan Pesic
2024 — conf
Characterization and Multiscale Modeling of TDDB in State-of-the-art BEOL.
IRPS
Andrea Palmieri, Mahdi Tavakoli, Chi Ching, Wenkai Zheng, Shi You, Xiaodong Zhang, Davide Cornigli, Michael Haverty, Navneet Singh, Luca Larcher, Monika Jamieson, Ajay Bhatnagar, Alexander Jansen, Max Gage, Jianshe Tang, Sameer Deshpande, Brian Brown, Arun Srivatsa, Mehul Naik, Bo Xie, Jerry Gelatos, Joung Joo Lee, Xianmin Tang, Gaurav Thareja, Milan Pesic
2024 — conf
Low-PBTS defect-engineered high-mobility metal-oxide BEOL transistors.
IRPS
Bastien Beltrando, Bruno Coppolelli, Jung-Bae Kim, Yang Ho Bae, Stephen Weeks, Lisa Enman, Ghazal Saheli, Davide Cornigli, Stuart Brinkley, Mark Saly, Luca Larcher, Dong Kil Yim, Milan Pesic
2024 — conf
Self-rectifying non-volatile tunneling synapse: multiscale modeling augmented development.
IMW
Bastien Beltrando, Marco A. Villena, Mondol Anik Kumar, Shruba Gangopadhyay, Deepak Kamalanathan, E. Smith, Nasrin Kazem, Ghazal Saheli, Stephen Weeks, Michael Haverty, Muthukumar Kaliappan, Andrea Padovani, S. Krishnan, Jeffrey W. Anthis, Luca Larcher, Milan Pesic
2023 — conf
Insights into device and material origins and physical mechanisms behind cross temperature in 3D NAND.
IRPS
Milan Pesic, Bastien Beltrando, Tommaso Rollo, Cristian Zambelli, Andrea Padovani, Rino Micheloni, Rita Maji, Lisa Enman, Mark Saly, Yang Ho Bae, Jung-Bae Kim, Dong Kil Yim, Luca Larcher
2023 — conf
The Role of Defects and Interface Degradation on Ferroelectric HZO Capacitors Aging.
IRPS
Lorenzo Benatti, Sara Vecchi, Milan Pesic, Francesco Maria Puglisi
2022 — conf
Electron-assisted switching in FeFETs: Memory window dynamics - retention - trapping mechanisms and correlation.
IRPS
Milan Pesic, Bastien Beltrando, Andrea Padovani, Toshihiko Miyashita, Nam-Sung Kim, Luca Larcher
2022 — conf
Reliability of Non-Volatile Memory Devices for Neuromorphic Applications: A Modeling Perspective (Invited).
IRPS
Andrea Padovani, Milan Pesic, Federico Nardi, Valerio Milo, Luca Larcher, Mondol Anik Kumar, Zunaid Baten
2022 — conf
Variability and disturb sources in ferroelectric 3D NANDs and comparison to Charge-Trap equivalents.
IMW
Milan Pesic, Andrea Padovani, Tommaso Rollo, Bastien Beltrando, Jack Strand, Parnika Agrawal, Alexander L. Shluger, Luca Larcher
2021 — conf
Variability sources and reliability of 3D - FeFETs.
IRPS
Milan Pesic, Bastien Beltrando, Andrea Padovani, Shruba Gangopadhyay, Muthukumar Kaliappan, Michael Haverty, Marco A. Villena, Enrico Piccinini, Matteo Bertocchi, Tony Chiang, Luca Larcher, Jack Strand, Alexander L. Shluger
2019 — conf
Demonstration and Endurance Improvement of p-channel Hafnia-based Ferroelectric Field Effect Transistors.
DRC
Felix Winkler, Milan Pesic, Claudia Richter, Michael Hoffmann, Thomas Mikolajick, Johann W. Bartha
2019 — conf
Understanding and Variability of Lateral Charge Migration in 3D CT-NAND Flash with and Without Band-Gap Engineered Barriers.
IRPS
Andrea Padovani, Milan Pesic, Mondol Anik Kumar, Pieter Blomme, Alexandre Subirats, Senthil Vadakupudhupalayam, Zunaid Baten, Luca Larcher
2017 — conf
Anti-ferroelectric ZrO2, an enabler for low power non-volatile 1T-1C and 1T random access memories.
ESSDERC
Milan Pesic, Michael Hoffmann, Claudia Richter, Stefan Slesazeck, Thomas Kämpfe, Lukas M. Eng, Thomas Mikolajick, Uwe Schroeder
2017 — conf
Anti-ferroelectric-like ZrO2 non-volatile memory: Inducing non-volatility within state-of-the-art DRAM.
NVMTS
Milan Pesic, Michael Hoffmann, Claudia Richter, Stefan Slesazeck, Uwe Schroeder, Thomas Mikolajick
2017 — —
Gate stack engineering for emerging polarization based non-volatile memories.
Milan Pesic
2016 — conf
Comparison of hafnia and PZT based ferroelectrics for future non-volatile FRAM applications.
ESSDERC
Franz P. G. Fengler, Milan Pesic, Sergej Starschich, Theodor Schneller, Ulrich Böttger, Tony Schenk, Min Hyuk Park, Thomas Mikolajick, Uwe Schroeder
2016 — conf
Impact of field cycling on HfO2 based non-volatile memory devices.
ESSDERC
Uwe Schroeder, Milan Pesic, Tony Schenk, Halid Mulaosmanovic, Stefan Slesazeck, Johannes Ocker, Claudia Richter, Ekaterina Yurchuk, K. Khullar, Johannes Müller, Patrick Polakowski, E. D. Grimley, J. M. LeBeau, Stefan Flachowsky, S. Jansen, Sabine Kolodinski, Ralf Van Bentum, Alfred Kersch, Christopher Künneth, Thomas Mikolajick