Mikko Varonen - RankMe

15 papers C 2Journal 4Unranked 9

Year	Rank	Type	Title / Venue / Authors
2024	—	`conf`	MMIC Design for Radiometer Receiver at 240 GHz in 0.13 μm SiGe BiCMOS Technology. NorCAS Md Najmussadat, Y. Tawfik, R. Ahamed, Mikko Varonen, Dristy Parveg, Antti Lamminen, Pekka Pursula, Kari A. I. Halonen
2023	J	`jnl`	220-240-GHz High-Gain Phase Shifter Chain and Power Amplifier for Scalable Large Phased-Arrays. IEEE Access Md Najmussadat, Raju Ahamed, Mikko Varonen, Dristy Parveg, Mikko Kantanen, Kari A. I. Halonen
2021	C	`conf`	A Compact Low-Power 140-GHz Low-Noise Amplifier with 19-dB Gain and 7-dB NF. ISCAS Kaisa Ryynänen, Kari Stadius, Andreas Hammer, Mikko Varonen, Henrik Forsten, Tero Kiuru, Ville Viikari, Jussi Ryynänen
2021	J	`jnl`	Beam-Reconfigurable Antenna Based on Vector Modulator and Rotman Lens on LTCC. IEEE Access Sabin Kumar Karki, Mikko Varonen, Mikko Kaunisto, Arto Rantala, Markku Lahti, Antti Lamminen, Jan Holmberg, Mikko Kantanen, Juha Ala-Laurinaho, Ville Viikari
2020	C	`conf`	Design and Analysis of an E-Band Power Detector in 0.13 μm SiGe BiCMOS Technology. ISCAS Raju Ahamed, Mikko Varonen, Dristy Parveg, Md Najmussadat, Mikko Kantanen, Kari A. I. Halonen
2018	—	`conf`	Design of an E-band Doherty Power amplifier. PRIME Md Najmussadat, Raju Ahamed, Dristy Parveg, Mikko Varonen, Kari Halonen
2017	—	`conf`	Design of high-performance E-band SPDT switch and LNA in 0.13 μm SiGe BiCMOS technology. NORCAS Raju Ahamed, Mikko Varonen, Dristy Parveg, Jan Saijets, Kari Halonen
2014	—	`conf`	A 97-106-GHz differential I-Q phase shifter in 28-nm CMOS. NORCHIP Ali Vahdati, Mikko Varonen, Mikko Kärkkäinen, Dristy Parveg, Kari Halonen
2010	—	`conf`	A W-band 65nm CMOS transmitter front-end with 8GHz IF bandwidth and 20dB IR-ratio. ISSCC Dan Sandström, Mikko Varonen, Mikko Kärkkäinen, Kari Halonen
2009	J	`jnl`	W-Band CMOS Amplifiers Achieving +10 dBm Saturated Output Power and 7.5 dB NF. IEEE J. Solid State Circuits Dan Sandström, Mikko Varonen, Mikko Kärkkäinen, Kari A. I. Halonen
2009	—	`conf`	W-band CMOS amplifiers achieving +10dBm saturated output oower and 7.5dB NF. ISSCC Dan Sandström, Mikko Varonen, Mikko Kärkkäinen, Kari Halonen
2008	J	`jnl`	Millimeter-Wave Integrated Circuits in 65-nm CMOS. IEEE J. Solid State Circuits Mikko Varonen, Mikko Kärkkäinen, Mikko Kantanen, Kari A. I. Halonen
2007	—	`conf`	Millimeter-wave amplifiers in 65-nm CMOS. ESSCIRC Mikko Varonen, Mikko Kärkkäinen, Kari A. I. Halonen
2007	—	`conf`	V-band balanced resistive mixer in 65-nm CMOS. ESSCIRC Mikko Varonen, Mikko Kärkkäinen, Kari A. I. Halonen
2005	—	`conf`	Metamorphic HEMT amplifier for K- and Ka-band applications. ECCTD Mikko Varonen, Mikko Kärkkäinen, Pekka Kangaslahti, Kari Halonen