Michael Waltl - RankMe

25 papers B 1Journal 2Unranked 22

Year	Rank	Type	Title / Venue / Authors
2025	—	`conf`	Evidence for 2D Hole Gas in GaN Gate Injection Transistors and its Role in RDson Recovery. IRPS Bernhard Ruch, Rajarshi Roy Chaudhuri, Boris Butej, Joao Gomes, Manuel Stabentheiner, Korbinian Reiser, Christian Koller, Dionyz Pogany, Clemens Ostermaier, Michael Waltl
2024	—	`conf`	A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs. IRPS Tibor Grasser, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Dominic Waldhör, A. Vasilev, Michael Waltl, Thomas Aichinger, M. Bockstedte, Wolfgang Gustin, Gregor Pobegen
2024	—	`conf`	Neural Network with Optical Frequency-Coded ReLU. OFC Margareta V. Stephanie, Lam Pham, Alexander Schindler, Michael Waltl, Tibor Grasser, Bernhard Schrenk
2023	—	`conf`	Modeling of NBTI Induced Threshold Voltage Shift Based on Activation Energy Maps Under Consideration of Variability. IRPS Christian Bogner, Christian Schlünder, Michael Waltl, Hans Reisinger, Tibor Grasser
2022	—	`conf`	Efficient Evaluation of the Time-Dependent Threshold Voltage Distribution Due to NBTI Stress Using Transistor Arrays. IRPS Christian Bogner, Tibor Grasser, Michael Waltl, Hans Reisinger, Christian Schlünder
2022	—	`conf`	Metastability of Negatively Charged Hydroxyl-E' Centers and their Potential Role in Positive Bias Temperature Instabilities. ESSDERC Christoph Wilhelmer, Dominic Waldhoer, Markus Jech, Al-Moatasem Bellah El-Sayed, Lukas Cvitkovich, Michael Waltl, Tibor Grasser
2022	—	`conf`	Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors. IRPS Alexander Grill, V. John, Jakob Michl, A. Beckers, Erik Bury, Stanislav Tyaginov, Bertrand Parvais, Adrian Vaisman Chasin, Tibor Grasser, Michael Waltl, Ben Kaczer, Bogdan Govoreanu
2022	—	`conf`	WDM-Conscious Synaptic Receptor Assisted by SOA+EAM. OFC Margareta V. Stephanie, Michael Waltl, Tibor Grasser, Bernhard Schrenk
2021	—	`conf`	CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States. IRPS Tibor Grasser, Barry J. O'Sullivan, Ben Kaczer, Jacopo Franco, Bernhard Stampfer, Michael Waltl
2021	B	`conf`	Design of Fault-Tolerant and Thermally Stable XOR Gate in Quantum dot Cellular Automata. ETS Syed Farah Naz, Ambika Prasad Shah, Suhaib Ahmed, Patrick Girard, Michael Waltl
2020	—	`conf`	Defect Spectroscopy in SiC Devices. IRPS Michael Waltl
2020	—	`conf`	Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures. IRPS Jakob Michl, Alexander Grill, Dieter Claes, Gerhard Rzepa, Ben Kaczer, Dimitri Linten, Iuliana P. Radu, Tibor Grasser, Michael Waltl
2020	—	`conf`	Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures. IRPS Alexander Grill, Erik Bury, Jakob Michl, Stanislav Tyaginov, Dimitri Linten, Tibor Grasser, Bertrand Parvais, Ben Kaczer, Michael Waltl, Iuliana P. Radu
2020	—	`conf`	The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release. IRPS Tibor Grasser, Ben Kaczer, Barry J. O'Sullivan, Gerhard Rzepa, Bernhard Stampfer, Michael Waltl
2019	—	`conf`	Low Cost and High Performance Radiation Hardened Latch Design for Reliable Circuits. ICECS Ambika Prasad Shah, Michael Waltl
2019	—	`conf`	Utilizing NBTI for Operation Detection of Integrated Circuits. VDAT Ambika Prasad Shah, Amirhossein Moshrefi, Michael Waltl
2018	J	`jnl`	A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability. Microelectron. Reliab. Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Vamsi Putcha, Erik Bury, Marko Simicic, Adrian Vaisman Chasin, Dimitri Linten, Bertrand Parvais, Francky Catthoor, Gerhard Rzepa, Michael Waltl, Tibor Grasser
2018	—	`conf`	Annealing and Encapsulation of CVD-MoS2 FETs with 10 DRC Yury Yu. Illarionov, Kirby K. H. Smithe, Michael Waltl, Ryan W. Grady, Sanchit Deshmukh, Eric Pop, Tibor Grasser
2018	—	`conf`	Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors. IRPS Tibor Grasser, Bernhard Stampfer, Michael Waltl, Gerhard Rzepa, Karl Rupp, Franz Schanovsky, Gregor Pobegen, Katja Puschkarsky, Hans Reisinger, Barry J. O'Sullivan, Ben Kaczer
2018	J	`jnl`	Comphy - A compact-physics framework for unified modeling of BTI. Microelectron. Reliab. Gerhard Rzepa, Jacopo Franco, Barry J. O'Sullivan, A. Subirats, Marko Simicic, Geert Hellings, Pieter Weckx, Markus Jech, Theresia Knobloch, Michael Waltl, Philippe Roussel, Dimitri Linten, Ben Kaczer, Tibor Grasser
2018	—	`conf`	Reliability of next-generation field-effect transistors with transition metal dichalcogenides. IRPS Yury Yu. Illarionov, Aday J. Molina-Mendoza, Michael Waltl, Theresia Knobloch, Marco M. Furchi, Thomas Mueller, Tibor Grasser
2017	—	`conf`	Physical modeling of the hysteresis in M0S2 transistors. ESSDERC Theresia Knobloch, Gerhard Rzepa, Yury Yu. Illarionov, Michael Waltl, Franz Schanovsky, Markus Jech, Bernhard Stampfer, Marco M. Furchi, Thomas Muller, Tibor Grasser
2015	—	`conf`	Hot-carrier degradation in single-layer double-gated graphene field-effect transistors. IRPS Yury Illarionov, Michael Waltl, Anderson D. Smith, Sam Vaziri, Mikael Östling, Thomas Mueller, Max Christian Lemme, Tibor Grasser
2015	—	`conf`	Interplay between hot carrier and bias stress components in single-layer double-gated graphene field-effect transistors. ESSDERC Yury Illarionov, Michael Waltl, Anderson D. Smith, Sam Vaziri, Mikael Östling, Max Christian Lemme, Tibor Grasser
2014	—	`conf`	Characterization and modeling of charge trapping: From single defects to devices. ICICDT Tibor Grasser, Gerhard Rzepa, Michael Waltl, Wolfgang Goes, Karina Rott, Gunnar Andreas Rott, Hans Reisinger, Jacopo Franco, Ben Kaczer