Michael Schröter

50 papers A 3Journal 13Unranked 33

Year	Rank	Type	Title / Venue / Authors
2024	—	`conf`	A 7.7-mW DC-to-62 GHz Ultra-Wideband Low-Noise Amplifier with ±2.1 ps Group Delay Variation and 3.3 dB NF in 0.13-μm SiGe: C BiCMOS. BCICTS Eren Vardarli, Austin Ying-Kuang Chen, Michael Schröter
2024	—	`conf`	A Novel Approach to Zero Ω Transmission Line Analysis and Design at W-Band and Beyond. BCICTS Israel Tapia, Eren Vardarli, Ciro Esposito, Michael Schröter
2024	—	`conf`	On the Emitter Back-Injection Current in Advanced SiGe HBTs at Cryogenic Temperatures. BCICTS Xiaodi Jin, Prateek Kumar, Michael Schröter
2024	—	`conf`	On the Safe Operating Area of InP HBTs. BCICTS Markus Müller, Sébastien Fregonese, Christoph Weimer, Guangsheng Liang, Xiaodi Jin, Maximilian Froitzheim, Thomas Zimmer, Michael Schröter
2023	—	`conf`	Multi-Finger 250-nm InP/GaAsSb DHBTs with Record 37.3 % Class-A PAE at 94 GHz. BCICTS Sara Hamzeloui, Akshay M. Arabhavi, Filippo Ciabattini, Mojtaba Ebrahimi, Markus Müller, Olivier Ostinelli, Michael Schröter, Colombo R. Bolognesi
2023	—	`conf`	Nonlinear Compact Modeling of InP/InGaAs DHBTs with HICUM/L2. ESSDERC Markus Müller, Christoph Weimer, Michael Schröter
2023	—	`conf`	Numerical Device Simulation Aided Study of RF-Stress-Caused Degradation in SiGe HBTs. BCICTS Christoph Weimer, Viktor Kazantsev, Markus Mäller, Michael Schröter
2023	—	`conf`	Physics-Based Compact Modeling of the Transfer Current in III-V DHBTs with the Generalized Integral Charge Control Relation. BCICTS Markus Müller, Mario Krattenmacher, Hendrik Leenders, Sara Hamzeloui, Colombo R. Bolognesi, Christoph Jungemann, Michael Schröter
2022	—	`conf`	Characterization and Modeling of Thermal Coupling in Multi-Finger InP DHBTs. BCICTS Markus Müller, Tobias Nardmann, Maximilian Froitzheim, Michael Schröter
2022	—	`conf`	Characterization of Dynamic Large-Signal Operating Limits and Long-Term RF Reliability of SiGe HBTs. BCICTS Christoph Weimer, Xiaodi Jin, Gerhard G. Fischer, Michael Schröter
2022	J	`jnl`	DMT-core: A Python Toolkit for Semiconductor Device Engineers. J. Open Source Softw. Mario Krattenmacher, Markus Müller, Pascal Kuthe, Michael Schröter
2022	—	`conf`	Device modeling tools and their application to SiGe HBT development. BCICTS Michael Schröter, Markus Müller, Mario Krattenmacher
2022	—	`conf`	Geometry scalable compact modeling of GaAs HBTs. BCICTS Tobias Nardmann, Plamen Kolev, Nick Tao, Michael Schröter
2022	—	`conf`	Thermal impedance of SiGe HBTs: Characterization and modeling. BCICTS Xiaodi Jin, Guangsheng Liang, Yves Zimmermann, Gerhard Fischer, Christoph Weimer, Mario Krattenmacher, Yaxin Zhang, Michael Schröter
2021	—	`conf`	Advances in foundry SiGe HBT BiCMOS processes through modeling and device scaling for ultra-high speed applications. BCICTS S. Phillips, Ed Preisler, J. Zheng, S. Chaudhry, Marco Racanelli, Markus Müller, Michael Schröter, W. McArthur, D. Howard
2021	—	`conf`	An Experimental Load-Pull Based Large-Signal RF Reliability Study of SiGe HBTs. BCICTS Christoph Weimer, Paulius Sakalas, Markus Müller, Gerhard G. Fischer, Michael Schröter
2021	—	`conf`	Augmented Drift-Diffusion Transport for the Simulation of Advanced SiGe HBTs. BCICTS Markus Müller, Michael Schröter, Christoph Jungemann, Christoph Weimer
2021	—	`conf`	Evaluation of Stacked-CNTFET Structures for High-performance Applications. BCICTS Boli Peng, Sven Mothes, Manojkumar Annamalai, Michael Schröter
2020	J	`jnl`	3.2-mW Ultra-Low-Power 173-207-GHz Amplifier With 130-nm SiGe HBTs Operating in Saturation. IEEE J. Solid State Circuits Yaxin Zhang, Wenfeng Liang, Xiaodi Jin, Mario Krattenmacher, Sophia Falk, Paulius Sakalas, Bernd Heinemann, Michael Schröter
2020	—	`conf`	Compact Modeling of SiGe HBTs for Design of Cryogenic Control and Readout Circuits for Quantum Computing. BCICTS Hanbin Ying, Sunil G. Rao, Jeffrey W. Teng, Milad Frounchi, Markus Müller, Xiaodi Jin, Michael Schröter, John D. Cressler
2020	—	`conf`	HICUM/L2: Extensions over the last decade. BCICTS Michael Schröter, Andreas Pawlak, Anindya Mukherjee, Didier Céli, Mario Krattenmacher
2020	—	`conf`	Modeling the temperature dependence of sheet and contact resistances in SiGe: C HBTs from 4.3 to 423 K. BCICTS Xiaodi Jin, Christoph Weimer, Yaxin Zhang, Michael Schröter
2019	—	`conf`	82 GHz direct up-converter mixer using double-balanced Gilbert cell with sensitivity analysis at mm-wave frequency. BCICTS Ahmed Omar, Anindya Mukherjee, Wenfeng Liang, Yaxin Zhang, P. Sakalas, Michael Schröter
2019	J	`jnl`	Architecture and Advanced Electronics Pathways Toward Highly Adaptive Energy- Efficient Computing. Proc. IEEE Gerhard P. Fettweis, Meik Dorpinghaus, Jerónimo Castrillón, Akash Kumar, Christel Baier, Karlheinz Bock, Frank Ellinger, Andreas Fery, Frank H. P. Fitzek, Hermann Härtig, Kambiz Jamshidi, Thomas Kissinger, Wolfgang Lehner, Michael Mertig, Wolfgang E. Nagel, Giang T. Nguyen, Dirk Plettemeier, Michael Schröter, Thorsten Strufe
2019	—	`conf`	Distortion Analysis of CE and CB SiGe HBT Power-Cells with fmax beyond 220 GHz for Millimeter-Wave Applications. BCICTS Paulius Sakalas, Anindya Mukherjee, Michael Schröter
2019	—	`conf`	IPCEI subcontracts contributing to 22-FDX Add-On Functionalities at GF. ESSDERC Sabine Kolodinski, Boli Peng, Ciro Esposito, Yves Zimmermann, Michael Schröter, Xin Xu, Paolo Valerio Testa, Corrado Carta, Frank Ellinger, Steffen Lehmann, M. Drescher, Clemens Mart, Maciej Wiatr, Wenke Weinreich, Violetta Sessi, Jens Trommer, Talha Chohan, Halid Mulaosmanovic, Walter M. Weber, Stefan Slesazeck
2019	—	`conf`	Mathematical foundation for constructing accurate dynamic bipolar transistor compact models. BCICTS Michael Schröter, Mario Krattenmacher
2018	—	`conf`	Modeling High-Current Effects in Bipolar Transistors: A Theory Review. BCICTS Michael Schröter, Sophia Falk
2018	—	`conf`	On the use of Drift-Diffusion and Hydrodynamic Transport Models for Simulating the Negative Differential Mobility Effect. BCICTS Gerald Wedel, T. Nardmanrr, Michael Schröter
2017	—	`conf`	Analytical drain current model for non-ballistic Schottky-Barrier CNTFETs. ESSDERC Igor Bejenari, Michael Schröter, Martin Claus
2017	—	`conf`	Avalanche compact model featuring SiGe HBTs characteristics up to BVcbo. ESSDERC Mathieu Jaoul, Didier Céli, Cristell Maneux, Michael Schröter, Andreas Pawlak
2017	J	`jnl`	Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications. Proc. IEEE Pascal Chevalier, Michael Schröter, Colombo R. Bolognesi, Vincenzo d'Alessandro, Maria Alexandrova, Josef Böck, Ralf Flickiger, Sébastien Fregonese, Bernd Heinemann, Christoph Jungemann, Rickard Lovblom, Cristell Maneux, Olivier Ostinelli, Andreas Pawlak, Niccolò Rinaldi, Holger Rücker, Gerald Wedel, Thomas Zimmer
2017	J	`jnl`	SiGe HBT Technology: Future Trends and TCAD-Based Roadmap. Proc. IEEE Michael Schröter, Tommy Rosenbaum, Pascal Chevalier, Bernd Heinemann, Sorin P. Voinigescu, Ed Preisler, Josef Böck, Anindya Mukherjee
2017	J	`jnl`	Terahertz RF Electronics and System Integration [Scanning the Issue]. Proc. IEEE Thomas W. Crowe, William R. Deal, Michael Schröter, Ching-Kuang C. Tzuang, Ke Wu
2016	A	`conf`	Implementation and quality testing for compact models implemented in Verilog-A. DATE Anindya Mukherjee, Andreas Pawlak, Michael Schröter, Didier Céli, Zoltan Huszka
2015	—	`conf`	Contact resistance extraction methods for CNTFETs. ESSDERC Anibal Pacheco-Sanchez, Sven Mothes, Martin Claus, Michael Schröter
2015	—	`conf`	Energy-Efficient Transceivers for Ultra-Highspeed Computer Board-to-Board Communication. ICUWB Michael Jenning, Bernhard Klein, Ronny Hahnel, Dirk Plettemeier, David Fritsche, Gregor Tretter, Corrado Carta, Frank Ellinger, Tobias Nardmann, Michael Schröter, Krzysztof Nieweglowski, Karlheinz Bock, Johannes Israel, Andreas Fischer, Najeeb ul Hassan, Lukas Landau, Meik Dorpinghaus, Gerhard P. Fettweis
2014	—	`conf`	Hysteresis-free carbon nanotube field-effect transistors without passivation. NANOARCH Jana Tittmann, Sascha Hermann, Stefan E. Schulz, Anibal Pacheco-Sanchez, Martin Claus, Michael Schröter
2013	—	`conf`	Expanding wireless bandwidth in a power-efficient way: developing a viable mm-wave radio technology. EWDTS Daniel Foty, Bruce Smith, Saurabh Sinha, Michael Schröter
2010	—	`book`	Compact Hierarchical Bipolar Transistor Modeling With HiCUM Michael Schröter, Anjan Chakravorty
2009	—	`conf`	Pushing the speed limits of SiGe: C HBTs up to 0.5 Terahertz. CICC Stefaan Decoutere, Stefaan Van Huylenbroeck, Bernd Heinemann, Alexander Fox, Pascal Chevalier, Alain Chantre, Thomas F. Meister, Klaus Aufinger, Michael Schröter
2007	A	`conf`	Interactive presentation: Statistical simulation of high-frequency bipolar circuits. DATE Wolfgang Schneider, Michael Schröter, W. Kraus, Holger Wittkopf
2005	J	`jnl`	High-Frequency Circuit Design Oriented Compact Bipolar Transistor Modeling with HICUM. IEICE Trans. Electron. Michael Schröter
2003	A	`conf`	Hot Topic Session: RF Design Technology for Highly Integrated Communication Systems. DATE Reimund Wittmann, Jürgen Hartung, Hans-Joachim Wassener, Günther Tränkle, Michael Schröter
1999	J	`jnl`	Physics- and process-based bipolar transistor modeling for integrated circuit design. IEEE J. Solid State Circuits Michael Schröter, Hans-Martin Rein, Winfried Rabe, Reinhard Reimann, Hans-Joachim Wassener, Andreas Koldehoff
1998	J	`jnl`	Correction To "Physical Modeling Of Lateral Scaling In Bipolar Transistors". IEEE J. Solid State Circuits Michael Schröter, David J. Walkey
1997	J	`jnl`	A scalable high-frequency noise model for bipolar transistors with application to optimal transistor sizing for low-noise amplifier design. IEEE J. Solid State Circuits Sorin P. Voinigescu, Michael C. Maliepaard, Jonathan L. Showell, Greg E. Babcock, David Marchesan, Michael Schröter, Peter Schvan, David L. Harame
1996	J	`jnl`	Physical modeling of lateral scaling in bipolar transistors. IEEE J. Solid State Circuits Michael Schröter, David J. Walkey
1996	J	`jnl`	VBIC95, the vertical bipolar inter-company model. IEEE J. Solid State Circuits Colin C. McAndrew, Jerold A. Seitchik, Derek F. Bowers, Mark Dunn, Mark Foisy, Ian Getreu, Marc McSwain, Shahriar Moinian, James Parker, David J. Roulston, Michael Schröter, Paul van Wijnen, Lawrence F. Wagner
1995	J	`jnl`	Investigation of very fast and high-current transients in digital bipolar IC's using both a new compact model and a device simulator. IEEE J. Solid State Circuits Michael Schröter, Hans-Martin Rein