Michael Nelhiebel

16 papers Misc 1Journal 13Unranked 2
YearRankTypeTitle / Venue / Authors
2023 — conf
A common hard-failure mechanism in GaN HEMTs in accelerated switching and single-pulse short-circuit tests.
IRPS
D. Wieland, Sybille Ofner, Manuel Stabentheiner, Boris Butej, Christian Koller, J. Sun, Andrea Minetto, Korbinian Reiser, Oliver Häberlen, Michael Nelhiebel, Michael Glavanovics, Dionyz Pogany, Clemens Ostermaier
2018 J jnl
Characterization of cyclic delamination behavior of thin film multilayers.
Microelectron. Reliab.
Thomas Walter, Golta Khatibi, Michael Nelhiebel, M. Stefenelli
2018 J jnl
Combined experimental and numerical approach to study electro-mechanical resonant phenomena in GaN-on-Si heterostructures.
Microelectron. Reliab.
Florian Peter Pribahsnik, Mirko Bernardoni, Michael Nelhiebel, M. Mataln, A. Lindemann
2017 J jnl
Exploring the thermal limit of GaN power devices under extreme overload conditions.
Microelectron. Reliab.
Florian Peter Pribahsnik, Michael Nelhiebel, M. Mataln, Mirko Bernardoni, G. Prechtl, Frank Altmann, David Poppitz, A. Lindemann
2017 J jnl
High cycle fatigue testing of thermosonic ball bonds.
Microelectron. Reliab.
Alice Lassnig, Martin Lederer, Golta Khatibi, Rainer Pelzer, W. Robl, Michael Nelhiebel
2015 — conf
Inspection of electrical interconnections within power ICs via magneto-optical imaging.
I2MTC
Florian W. Dietachmayr, Patrick A. Hölzl, Bernhard G. Zagar, Michael Nelhiebel
2014 Misc conf
Modeling fatigue life of power semiconductor devices with ε-N fields.
WSC
Olivia Bluder, Kathrin Plankensteiner, Michael Nelhiebel, Walther Heinz, Christian Leitner
2013 J jnl
Effective and reliable heat management for power devices exposed to cyclic short overload pulses.
Microelectron. Reliab.
Michael Nelhiebel, Robert Illing, Thomas Detzel, S. Wöhlert, B. Auer, S. Lanzerstorfer, M. Rogalli, W. Robl, Stefan Decker, J. Fugger, Markus Ladurner
2013 J jnl
Refined NBTI characterization of arbitrarily stressed PMOS devices at ultra-low and unique temperatures.
Microelectron. Reliab.
Thomas Aichinger, Michael Nelhiebel, Tibor Grasser
2012 J jnl
High temperature storage reliability investigation of the Al-Cu wire bond interface.
Microelectron. Reliab.
Rainer Pelzer, Michael Nelhiebel, Robert Zink, Stefan Wöhlert, Alice Lassnig, Golta Khatibi
2012 J jnl
Modeling of highly anisotropic microstructures for electro-thermal simulations of power semiconductor devices.
Microelectron. Reliab.
Stefano de Filippis, Helmut Köck, Michael Nelhiebel, Vladimír Kosel, Stefan Decker, Michael Glavanovics, Andrea Irace
2011 J jnl
A reliable technology concept for active power cycling to extreme temperatures.
Microelectron. Reliab.
Michael Nelhiebel, Robert Illing, Christoph Schreiber, S. Wöhlert, S. Lanzerstorfer, Markus Ladurner, C. Kadow, Stefan Decker, Donald Dibra, H. Unterwalcher, M. Rogalli, W. Robl, T. Herzig, M. Poschgan, M. Inselsbacher, Michael Glavanovics, Sylvain Fraïssé
2011 J jnl
Impact of gate poly doping and oxide thickness on the N- and PBTI in MOSFETs.
Microelectron. Reliab.
Gregor Pobegen, Thomas Aichinger, Tibor Grasser, Michael Nelhiebel
2011 J jnl
Improved thermal management of low voltage power devices with optimized bond wire positions.
Microelectron. Reliab.
Helmut Köck, Christian Djelassi, Stefano de Filippis, Robert Illing, Michael Nelhiebel, Markus Ladurner, Michael Glavanovics, Dionyz Pogany
2008 J jnl
On the temperature dependence of NBTI recovery.
Microelectron. Reliab.
Thomas Aichinger, Michael Nelhiebel, Tibor Grasser
2005 J jnl
Hydrogen-related influence of the metallization stack on characteristics and reliability of a trench gate oxide.
Microelectron. Reliab.
Michael Nelhiebel, J. Wissenwasser, Thomas Detzel, A. Timmerer, E. Bertagnolli