Mengwei Si

14 papers Unranked 13
YearRankTypeTitle / Venue / Authors
2024 — conf
71 GHz-fmax β-Ga2O3-on-SiC RF Power MOSFETs with Record Pout=3.1 W/mm and PAE=50.8% at 2 GHz, Pout= 2.3 W/mm at 4 GHz, and Low Microwave Noise Figure.
VLSI Technology and Circuits
Min Zhou, Hong Zhou, Mengwei Si, Guangjie Gao, Xiaojin Chen, Xiaoxiao Zhu, Kui Dang, Peijun Ma, Xiaohua Ma, Xuefeng Zheng, Zhihong Liu, Jincheng Zhang, Yuhao Zhang, Yue Hao
2023 — conf
Ultrahigh Bias Stability of ALD In2O3 FETs Enabled by High Temperature O2 Annealing.
VLSI Technology and Circuits
Zhuocheng Zhang, Zehao Lin, Chang Niu, Mengwei Si, Muhammad Ashraful Alam, Peide D. Ye
2022 — conf
Determination of Domain Wall Velocity and Nucleation Time by Switching Dynamics Studies of Ferroelectric Hafnium Zirconium Oxide.
VLSI Technology and Circuits
Xiao Lyu, Pragya R. Shrestha, Mengwei Si, Panni Wang, Junkang Li, Kin P. Cheung, Shimeng Yu, Peide D. Ye
2022 — conf
Thermal Studies of BEOL-compatible Top-Gated Atomically Thin ALD In2O3 FETs.
VLSI Technology and Circuits
Pai-Ying Liao, Sami Alajlouni, Mengwei Si, Zhuocheng Zhang, Zehao Lin, Jinhyun Noh, Calista Wilk, Ali Shakouri, Peide D. Ye
2022 — conf
Ultra-Fast Operation of BEOL-Compatible Atomic-Layer-Deposited In2O3 Fe-FETs: Achieving Memory Performance Enhancement with Memory Window of 2.5 V and High Endurance > 10
VLSI Technology and Circuits
Zehao Lin, Mengwei Si, Peide D. Ye
2019 — conf
Modeling of Leakage-Assist-Switching in Ferroelectric/Dielectric Stack.
DRC
Mengwei Si, Xiao Lyu, Peide D. Ye
2018 — conf
2D Ferroelectric CuInP
DRC
Pai-Ying Liao, Mengwei Si, Gang Qiu, Peide D. Ye
2018 — conf
Alleviation of Short Channel Effects in Ge Negative Capacitance pFinFETs.
DRC
Wonil Chung, Mengwei Si, Peide D. Ye
2018 — conf
High-Performance Few-Layer Tellurium CMOS Devices Enabled by Atomic Layer Deposited Dielectric Doping Technique.
DRC
Gang Qiu, Mengwei Si, Yixiu Wang, Xiao Lyu, Wenzhuo Wu, Peide D. Ye
2018 — —
III-V and 2D Devices: from MOSFETs to Steep-Slope Transistors
Mengwei Si
2018 — conf
Low frequency noise in MOS2 negative capacitance field-effect transistor.
IRPS
Sami Alghamdi, Mengwei Si, Lingming Yang, Peide D. Ye
2018 — conf
The Impact of Substrates on the Performance of Top-Gate p-Ga203 Field-Effect Transistors: Record High Drain Current of 980 mA/mm on Diamond.
DRC
Jinhyun Noh, Mengwei Si, Hong Zhou, Marko J. Tadjer, Peide D. Ye
2018 — conf
Time Response of Polarization Switching in Ge Hafnium Zirconium Oxide Nanowire Ferroelectric Field-effect Transistors.
DRC
Sami Alghamdi, Wonil Chung, Mengwei Si, Peide D. Ye
2015 — conf
Characterization and reliability of III-V gate-all-around MOSFETs.
IRPS
Mengwei Si, Sanghoon Shin, Nathan J. Conrad, Jiangjiang Gu, Jingyun Zhang, Muhammad Ashraful Alam, Peide D. Ye